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MR5A16AUMA45R

Everspin Technologies

MR5A16AUMA45R by Everspin Technologies

Everspin Technologies' MR5A16AUMA45R is a 2MX16 MRAM with 3V supply voltage, operating at -40 to 125 °C. It features a low profile grid array package, 0.75mm terminal pitch, and 45ns access time. Ideal for applications requiring fast, non-volatile memory with high endurance and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,794 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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AZTECH Wire

Italy . 857 parts In-Stock

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$13.459

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Bastille Electronics

Australia . 33 parts In-Stock

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Overview

Experience the innovative technology of Everspin Technologies with the MR5A16AUMA45R MRAM, a high-quality memory product designed for various applications. With its advanced features and reliable performance, this MRAM offers customers unparalleled value and benefits. Say goodbye to slow write cycle times and hello to lightning-fast access speeds with this versatile memory solution. Trust in Everspin Technologies' reputation for excellence and choose the MR5A16AUMA45R for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the MRAM, ensuring it can withstand various environmental conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient data access, making the MRAM suitable for a wide range of applications where speed and responsiveness are important.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage offers a good balance between power efficiency and performance, making the MRAM energy efficient while still providing reliable operation.

Organization: 2MX16

The 2MX16 organization allows for a large memory capacity and parallel data access, enabling high-speed processing and storage capabilities in the MRAM.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the MRAM can function reliably in demanding thermal environments, increasing its versatility and usability.

Technical Specifications

MRAMs MR5A16AUMA45R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

45 ns

Minimum Data Retention Time:

20

JESD-30 Code:

S-PBGA-B48

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.018 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

10 mm

Maximum Write Cycle Time (tWC):

.000045 ms

Trade Compliance

MR5A16AUMA45R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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