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MR5A16ACYS35R

Everspin Technologies

MR5A16ACYS35R by Everspin Technologies

MR5A16ACYS35R by Everspin Technologies is a 2MX16 MRAM with 3V supply voltage, 85°C max temp, and 35ns access time. Ideal for applications requiring fast, non-volatile memory storage in compact devices due to its small outline and thin profile package style.

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Vyrian

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AZTECH Wire

Italy . 441 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Upgrade your technology with the cutting-edge MR5A16ACYS35R by Everspin Technologies. As a leading manufacturer in the industry, Everspin ensures top-quality products that are reliable and efficient. This MRAM is perfect for a wide range of applications, offering fast access times and low power consumption. Experience the value and benefits of this product, from its compact design to its advanced features. Trust Everspin Technologies to provide you with the best in memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and protection for the MRAMs.

Surface Mount: YES

Being surface mountable makes it easy to integrate these MRAMs into various electronic devices and circuit boards.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient data access in different applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides a reliable power source for the MRAMs to operate efficiently.

No. of Terminals: 54

Having 54 terminals allows for versatile connectivity options and integration with other components in a circuit.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the MRAMs can perform reliably even in harsh environments.

Organization: 2MX16

The 2MX16 organization indicates a high memory capacity and data storage capability for the MRAMs.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance for the MRAMs.

Memory IC Type: MRAM

Being MRAM technology provides fast read and write speeds, non-volatility, and high endurance compared to other memory types.

Maximum Access Time: 35 ns

The low maximum access time of 35 nanoseconds allows for quick data retrieval and processing in the MRAMs.

Technical Specifications

MRAMs MR5A16ACYS35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

54

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.018 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR5A16ACYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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