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MR5A16ACYS35

Everspin Technologies

MR5A16ACYS35 by Everspin Technologies

Everspin Technologies' MR5A16ACYS35 is a 2MX16 MRAM with 33554432-bit memory density and 16-word width. Operating at 3.3V, it offers a max access time of 35ns and -40 to 85°C temperature range. Ideal for applications requiring fast, non-volatile memory with low power consumption in compact designs.

Median Price

$96.165

Lifecycle Status

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Mouser Electronics

USA . 251 parts In-Stock

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$96.090

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$83.570

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DigiKey

USA . 208 parts In-Stock

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$96.240

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$83.710

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$81.350

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Avnet

USA . 108 parts In-Stock

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Nova Conductors

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NAC Semi

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Vyrian

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IBS Electronics

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Argo Parts USA

USA . 3,397 parts In-Stock

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Continental Prestige Electronics

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Aranea Global

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Overview

Everspin Technologies' MR5A16ACYS35 is a game-changer in the world of MRAMs, offering unparalleled quality and performance. With its innovative technology and reliable design, this product is perfect for a wide range of applications. From data storage to industrial automation, the MR5A16ACYS35 provides exceptional value and benefits to customers. Say goodbye to slow access times and hello to lightning-fast performance with Everspin Technologies' cutting-edge MRAM!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the MRAMs, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Offers flexibility in data retrieval and storage operations without requiring synchronization.

Nominal Supply Voltage / Vsup (V): 3.3

Efficient power consumption at a standard voltage level for compatibility in various electronic devices.

Organization: 2MX16

Optimal organization for memory storage and retrieval in a wide range of applications.

Technology: CMOS

Utilizes low power consumption and high noise immunity for reliable performance.

Memory IC Type: MRAM

Utilizes Magnetoresistive Random Access Memory technology for fast and non-volatile data storage.

Maximum Access Time: 35 ns

Provides quick access to stored data, enhancing overall performance of the MRAM.

Technical Specifications

MRAMs MR5A16ACYS35 attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

54

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.018 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR5A16ACYS35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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