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MR5A16ACMA35R

Everspin Technologies

MR5A16ACMA35R by Everspin Technologies

MR5A16ACMA35R by Everspin Technologies is a 2MX16 MRAM with 3.3V supply, 35ns access time, and 33554432-bit memory density. It is ideal for applications requiring fast, non-volatile memory solutions in a compact grid array package with low profile design.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 4,716 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 313 parts In-Stock

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$7.108

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Continental Prestige Electronics

USA . 1,962 parts In-Stock

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Argo Parts USA

USA . 1,576 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Robosynatics

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Lucentia Tech

USA . 300 parts In-Stock

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Overview

Revolutionize your data storage and processing with the MR5A16ACMA35R by Everspin Technologies. As a leading manufacturer of MRAMs, Everspin Technologies delivers cutting-edge technology that ensures fast and reliable performance in a variety of applications. With a high memory density and low profile design, this product offers customers unparalleled value and benefits. Say goodbye to slow access times and hello to efficiency with the MR5A16ACMA35R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Surface Mount: YES

Easily mountable on PCBs, saving space and reducing assembly time.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization, increasing flexibility.

Nominal Supply Voltage / Vsup (V): 3.3

Suitable voltage level for stable and efficient operation.

No. of Terminals: 48

Sufficient number of terminals for connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for various environments.

Memory IC Type: MRAM

Utilizes Magnetic Random Access Memory technology, providing fast and reliable data storage.

Technical Specifications

MRAMs MR5A16ACMA35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

S-PBGA-B48

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.018 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

10 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR5A16ACMA35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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