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MR25H40MDF

Everspin Technologies

MR25H40MDF by Everspin Technologies

MR25H40MDF by Everspin Technologies is a MRAM with 512KX8 organization, 524288 words, and 4194304 bit memory density. Operating at -40 to 125 °C, it's ideal for automotive applications requiring fast, synchronous data processing with a supply voltage of 3.3V. The compact package style and no lead terminal form make it suitable for space-constrained designs.

Median Price

$53.240

Lifecycle Status

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11

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Arrow

USA . 341 parts In-Stock

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$33.930

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$25.460

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$25.210

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DigiKey

USA . 5,251 parts In-Stock

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$53.140

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$45.166

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Mouser Electronics

USA . 740 parts In-Stock

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$53.340

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$45.360

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Verical

USA . 823 parts In-Stock

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$54.846

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Edge Electronics

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Nova Conductors

Japan . 46 parts In-Stock

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$30.493

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NexGen Digital

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Prism Electronics

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Continental Prestige Electronics

USA . 5,980 parts In-Stock

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$28.866

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$28.289

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$28.866

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Netroflash

USA . 2,000 parts In-Stock

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$30.493

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$31.415

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$29.844

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$29.844

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Modulus Dynamics

Lithuania . 43 parts In-Stock

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$31.441

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$31.126

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$30.183

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

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Kepictronics

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

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Glotronic Ltd.

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Overview

Unlock the power of cutting-edge technology with the MR25H40MDF by Everspin Technologies. As a leading manufacturer of MRAMs, Everspin delivers unparalleled quality and reliability. This MRAM offers a seamless integration for various applications, providing customers with a valuable solution for their memory needs. Experience the advantages of its synchronous operation and automotive-grade temperature grade, making it ideal for a wide range of projects. Elevate your technology with the MR25H40MDF and discover a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V makes this MRAM energy-efficient and compatible with standard power supplies.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise and coordinated data transfers, enhancing performance and reliability.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this MRAM can withstand harsh environmental conditions and high temperature environments.

Memory Width: 8

With a memory width of 8 bits, this MRAM can process data efficiently and handle larger amounts of information at once.

Technical Specifications

MRAMs MR25H40MDF attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Trade Compliance

MR25H40MDF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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