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MR25H40MDFR

Everspin Technologies

MR25H40MDFR by Everspin Technologies

MR25H40MDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 125 °C. It features synchronous operation, small outline package, and AEC-Q100 screening level. Ideal for automotive applications requiring fast and reliable non-volatile memory solutions.

Median Price

$30.680

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$30.680

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300

$30.680

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Vyrian

USA . 3,258 parts In-Stock

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3,258

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Component Sense

UK . 591 parts In-Stock

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591

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$5.332

100+ parts

$5.066

1k+ parts

$5.066

10k+ parts

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100

$5.332

$5.066

$5.066

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AZTECH Wire

Italy . 268 parts In-Stock

1+ parts

$15.130

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268

$15.130

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Continental Prestige Electronics

USA . 946 parts In-Stock

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$30.680

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$30.066

946

$30.680

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$30.066

Netroflash

USA . 50 parts In-Stock

1+ parts

$30.680

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$29.146

10k+ parts

$28.532

50

$30.680

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$29.146

$28.532

Argo Parts USA

USA . 4,047 parts In-Stock

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4,047

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Modulus Dynamics

Lithuania . 750 parts In-Stock

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Overview

Everspin Technologies brings you the cutting-edge MR25H40MDFR, a top-of-the-line MRAM that combines speed, reliability, and durability in one compact package. Ideal for automotive applications, this memory device offers lightning-fast data access and storage capabilities, ensuring optimal performance even in extreme conditions. With a focus on quality and innovation, Everspin Technologies delivers a product that exceeds expectations and provides unmatched value to customers looking for advanced memory solutions. Upgrade your systems today with the MR25H40MDFR and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability of the product.

Surface Mount: YES

Being surface mountable makes it easier to integrate this MRAM into a variety of electronic devices and systems.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures high quality and reliability, making it suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing overall performance.

Nominal Supply Voltage: 3.3V

The 3.3V nominal supply voltage provides compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this MRAM can withstand high temperature environments, making it suitable for various industrial applications.

Memory IC Type: MRAM

The use of MRAM technology offers fast read and write speeds, high endurance, and non-volatility, making it a reliable choice for data storage applications.

Technical Specifications

MRAMs MR25H40MDFR attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H40MDFR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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