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MR2A16AYS35R

Freescale Semiconductor

MR2A16AYS35R by Freescale Semiconductor

MR2A16AYS35R by Freescale Semiconductor is a 256Kx16 MRAM with 3.3V supply, operating at 0-70°C. It features a parallel interface, 0.035ms write cycle time, and 35ns access time. Ideal for applications requiring fast and non-volatile memory solutions in commercial-grade environments.

Median Price

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< 1k

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Vyrian

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Nova Conductors

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One Stop Electronics

USA . 1,220 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,196 parts In-Stock

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Ampacity Inc.

Singapore . 619 parts In-Stock

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AZTECH Wire

Italy . 851 parts In-Stock

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Continental Prestige Electronics

USA . 4,625 parts In-Stock

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Argo Parts USA

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Advanced Electronics

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Bastille Electronics

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Overview

Experience the cutting-edge technology of Freescale Semiconductor with the MR2A16AYS35R MRAM. This high-quality product offers unparalleled reliability and performance in a compact package, making it the perfect choice for a wide range of applications. From industrial automation to consumer electronics, this MRAM delivers fast access times and low power consumption, ensuring efficiency and longevity. Trust Freescale Semiconductor to provide you with the innovative solutions you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the MRAM, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Allows for flexible operation and efficient data access.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for reliable performance.

No. of Terminals: 44

Sufficient terminals for connectivity and data transfer.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, suitable for various operating environments.

Memory Width: 16

Wide memory width for storing and accessing data efficiently.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Maximum Access Time: 35 ns

Fast access time for quick data retrieval.

Technical Specifications

MRAMs MR2A16AYS35R attributes and parameters. Explore more MRAMs devices from Freescale Semiconductor

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.012 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

155 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.035 ms

Trade Compliance

MR2A16AYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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