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MR4A16BCMA35R

Everspin Technologies

MR4A16BCMA35R by Everspin Technologies

Everspin Technologies' MR4A16BCMA35R is a 1MX16 MRAM with 3.3V supply, 35ns access time, and 1M words code. It is used in industrial applications requiring fast, non-volatile memory with low power consumption and high reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,437 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,896 parts In-Stock

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$4.130

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AZTECH Wire

Italy . 375 parts In-Stock

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$12.072

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Continental Prestige Electronics

USA . 4,645 parts In-Stock

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Argo Parts USA

USA . 1,696 parts In-Stock

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Advanced Electronics

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Bastille Electronics

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Overview

Everspin Technologies presents the MR4A16BCMA35R, a premium MRAM memory module designed to revolutionize data storage with its cutting-edge technology. With a high-quality build and reliable performance, this product is perfect for industrial applications requiring fast and efficient data processing. Experience the benefits of ultra-fast access times and low power consumption, making it a cost-effective solution for your memory needs. Trust Everspin Technologies to provide top-notch products that deliver value and innovation to customers worldwide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and rugged applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and efficiency in data access and retrieval, making the MRAMs suitable for various real-time applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage offers compatibility with common power systems, ensuring easy integration into existing circuit designs.

No. of Words: 1048576 words

With a large number of words, the MRAMs provide ample storage capacity for data-intensive applications, offering high performance and efficiency.

Technology: CMOS

CMOS technology ensures low power consumption and high speed operation, making the MRAMs energy-efficient and reliable for long-term use.

Maximum Access Time: 35 ns

The fast access time of 35 nanoseconds enables quick data retrieval and processing, enhancing overall system performance and responsiveness.

Technical Specifications

MRAMs MR4A16BCMA35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

S-PBGA-B48

Length:

10 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A16BCMA35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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