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MR4A16BMA35

Everspin Technologies

MR4A16BMA35 by Everspin Technologies

MRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 3.3;

Median Price

$42.255

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 609 parts In-Stock

1+ parts

$41.340

100+ parts

$34.370

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609

$41.340

$34.370

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DigiKey

USA . 603 parts In-Stock

1+ parts

$43.170

100+ parts

$32.989

1k+ parts

$32.076

10k+ parts

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603

$43.170

$32.989

$32.076

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mil-Aero Solutions, Inc.

USA . 244 parts In-Stock

1+ parts

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244

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ComSIT Distribution GmbH

Germany . 7 parts In-Stock

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7

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QIE Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Kepictronics

USA . 1,200 parts In-Stock

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1,200

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Technical Specifications

MRAMs MR4A16BMA35 attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

S-PBGA-B48

Length:

10 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A16BMA35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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