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MR4A08BCYS35R

Everspin Technologies

MR4A08BCYS35R by Everspin Technologies

Everspin Technologies' MR4A08BCYS35R is a 2MX8 MRAM with 3.3V supply, operating at -40 to 85 °C. It features a small outline package, parallel interface, and 35ns access time. Ideal for industrial applications requiring fast non-volatile memory with high endurance and low power consumption.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,625 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$4.450

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$4.450

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AZTECH Wire

Italy . 655 parts In-Stock

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$11.848

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Argo Parts USA

USA . 5,405 parts In-Stock

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Continental Prestige Electronics

USA . 3,877 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Elevate your electronics with the MR4A08BCYS35R by Everspin Technologies, a cutting-edge MRAM that boasts high-quality construction and reliable performance. As a leader in memory solutions, Everspin delivers a product that exceeds expectations in various applications. With its innovative technology, this MRAM offers unparalleled value to customers, providing faster access times, higher reliability, and increased data retention. Upgrade your devices today with the MR4A08BCYS35R and experience the difference Everspin Technologies can make for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the MRAM chip, making it suitable for a variety of environmental conditions.

Surface Mount: YES

Being surface mountable allows for easy integration into electronic devices, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a compact design, ideal for applications where space is limited.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible access to the memory, providing high performance and versatility.

Nominal Supply Voltage / Vsup (V): 3.3

The low voltage requirement of 3.3V results in reduced power consumption, making this MRAM a cost-effective and energy-efficient choice.

Power Supplies (V): 3.3

This MRAM chip operates efficiently with a single 3.3V power supply, simplifying the system design and reducing component requirements.

No. of Terminals: 44

With 44 terminals, this MRAM chip offers a high level of connectivity for seamless integration into complex electronic systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style allows for compact placement on circuit boards, optimizing space utilization.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this MRAM chip can withstand harsh environments without compromising performance.

Organization: 2MX8

The 2MX8 organization provides a balanced distribution of memory cells, enhancing data retrieval speeds and overall efficiency.

Technical Specifications

MRAMs MR4A08BCYS35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A08BCYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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