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BSM150GT120DLC

Eupec & Kg

BSM150GT120DLC by Eupec & Kg

N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 250 A; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 997 parts In-Stock

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997

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Vyrian

USA . 200 parts In-Stock

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200

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$1.245

100+ parts

$1.133

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$1.021

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10

$1.245

$1.133

$1.021

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Modulus Dynamics

Lithuania . 6,830 parts In-Stock

1+ parts

$1.417

100+ parts

$1.360

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$1.304

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6,830

$1.417

$1.360

$1.304

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Northwest PG Solutions

USA . 1,322 parts In-Stock

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Corphita

USA . 268 parts In-Stock

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268

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Native Components

USA . 176 parts In-Stock

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176

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM150GT120DLC attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X39

No. of Elements:

6

No. of Terminals:

39

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

2.6 V

Trade Compliance

BSM150GT120DLC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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