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MMSTA05-7-F

Diodes Incorporated

MMSTA05-7-F by Diodes Incorporated

Diodes Inc. MMSTA05-7-F is a NPN BJT transistor with 0.2W power dissipation, 60V max collector-emitter voltage, and 100MHz transition frequency. Ideal for switching applications in small outline packages with matte tin finish for surface mount assembly.

Median Price

$0.234

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,488 parts In-Stock

1+ parts

$0.410

100+ parts

$0.158

1k+ parts

$0.104

10k+ parts

$0.087

3,488

$0.410

$0.158

$0.104

$0.087

DigiKey

USA . 2,638 parts In-Stock

1+ parts

$0.410

100+ parts

$0.157

1k+ parts

$0.104

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-

2,638

$0.410

$0.157

$0.104

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Verical

USA . 153,000 parts In-Stock

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$0.059

153,000

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$0.059

Arrow

USA . 2,000 parts In-Stock

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$0.031

2,000

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$0.031

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.094

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50

$0.094

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Vyrian

USA . 47,379 parts In-Stock

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47,379

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Chip Stock

USA . 46,000 parts In-Stock

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46,000

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Prism Electronics

USA . 83 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 47,705 parts In-Stock

1+ parts

$0.044

100+ parts

-

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47,705

$0.044

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Continental Prestige Electronics

USA . 6,815 parts In-Stock

1+ parts

$0.094

100+ parts

-

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10k+ parts

$0.092

6,815

$0.094

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$0.092

Argo Parts USA

USA . 3,890 parts In-Stock

1+ parts

$0.094

100+ parts

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$0.091

3,890

$0.094

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$0.091

Netroflash

USA . 1,000 parts In-Stock

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$0.094

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1,000

$0.094

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Corohmni

South Africa . 97 parts In-Stock

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$0.818

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97

$0.818

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Modulus Dynamics

Lithuania . 21,475 parts In-Stock

1+ parts

$0.823

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$0.823

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$0.823

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21,475

$0.823

$0.823

$0.823

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.619

100+ parts

$1.473

1k+ parts

$1.328

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5,000

$1.619

$1.473

$1.328

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Futuretech Components

Singapore . 24,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Lixinc

USA . 14,481 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Kepictronics

USA . 2,200 parts In-Stock

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Perfect Parts

USA . 1,166 parts In-Stock

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GreenTree Electronics

Israel . 202 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality MMSTA05-7-F Small Signal Bipolar Junction Transistor by Diodes Incorporated. This NPN transistor is perfect for switching applications, offering reliable performance and efficiency. Its compact rectangular package with gull wing terminals makes it easy to integrate into a variety of circuits. With a maximum power dissipation of 0.2W and a minimum DC current gain of 100, this transistor is a versatile choice for your projects. Trust in Diodes Incorporated for top-notch components that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used and offer good performance in switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the transistor easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into PCB designs.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy mounting and handling.

Terminal Form: GULL WING

Gull wing terminals offer good mechanical stability and ease of soldering during assembly.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.2 W

Capable of dissipating up to 0.2 watts of power, ensuring reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures good amplification capabilities for signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can function reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, it can handle a wide range of voltage levels in a circuit.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability for the transistor's performance.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 amps of collector current, suitable for various switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, it ensures reliable solder joint formation during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper solder melting and component reflow during the soldering process.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, it offers good high-frequency performance for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMSTA05-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMSTA05-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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