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DMN6140LQ-7

Diodes Incorporated

DMN6140LQ-7 by Diodes Incorporated

DMN6140LQ-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 1.6A ID, and 0.14 ohm RDS(on). Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.

Median Price

$0.236

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 495 parts In-Stock

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$0.391

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$0.176

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$0.104

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495

$0.391

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$0.104

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DigiKey

USA . 666 parts In-Stock

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$0.540

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$0.210

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$0.140

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$0.540

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$0.140

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Arrow

USA . 105,000 parts In-Stock

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Verical

USA . 27,000 parts In-Stock

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$0.081

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$0.081

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$0.122

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$0.122

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Maritex

Poland . 1 parts In-Stock

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$0.221

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$0.157

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$0.112

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$0.087

1

$0.221

$0.157

$0.112

$0.087

TME

Poland . 128 parts In-Stock

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$0.450

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$0.194

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$0.120

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$0.089

128

$0.450

$0.194

$0.120

$0.089

Vyrian

USA . 278,344 parts In-Stock

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Rutronik

Germany . 246,000 parts In-Stock

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$0.091

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$0.091

IBS Electronics

USA . 150,000 parts In-Stock

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$0.064

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NAC Semi

USA . 87,000 parts In-Stock

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$0.131

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Chip Stock

USA . 75,500 parts In-Stock

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ComSIT Distribution GmbH

Germany . 25,778 parts In-Stock

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ComSIT USA

USA . 25,778 parts In-Stock

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Semtec, LLC

USA . 7,512 parts In-Stock

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Prism Electronics

USA . 22 parts In-Stock

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Semicontronic

India . 287,384 parts In-Stock

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$0.064

100+ parts

$0.062

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$0.062

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287,384

$0.064

$0.062

$0.062

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Ampacity Inc.

Singapore . 278,434 parts In-Stock

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$0.064

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Bastille Electronics

Australia . 2,724 parts In-Stock

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$0.122

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$0.116

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$0.110

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$0.109

2,724

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$0.116

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$0.109

Argo Parts USA

USA . 2,377 parts In-Stock

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$0.122

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$0.118

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$0.118

Corohmni

South Africa . 863 parts In-Stock

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$0.463

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863

$0.463

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Aztec Data Supply Inc.

USA . 4,019 parts In-Stock

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$0.590

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.134

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$1.077

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$1.077

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$1.134

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$1.077

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GreenTree Electronics

Israel . 678,000 parts In-Stock

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RC Electronics

USA . 52,200 parts In-Stock

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Perfect Parts

USA . 12,445 parts In-Stock

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Lixinc

USA . 11,988 parts In-Stock

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Kepictronics

USA . 6,180 parts In-Stock

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Continental Prestige Electronics

USA . 5,860 parts In-Stock

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iodParts Technologies Inc.

India . 3,025 parts In-Stock

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Component Connect

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Robosynatics

Brazil . 1,209 parts In-Stock

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Lucentia Tech

USA . 1,209 parts In-Stock

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$1.188

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$1.164

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$1.164

1,209

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$1.188

$1.164

$1.164

Overview

Unlock the power of advanced technology with the DMN6140LQ-7 by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated guarantees top-notch quality and reliability. Ideal for switching applications, this N-channel transistor boasts a single configuration with a built-in diode, offering unmatched efficiency and performance. With a maximum drain current of 1.6 A and a minimum DS breakdown voltage of 60 V, this FET delivers superior functionality in a compact package. Trust Diodes Incorporated to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor components.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and control in the transistor.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for specific circuit requirements.

Transistor Application: SWITCHING

Suitable for applications requiring fast switching speeds.

Surface Mount: YES

Easy to mount on PCBs for compact and streamlined circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are typically easier to use and have lower power consumption.

Maximum Power Dissipation (Abs): 1.3 W

Can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and commonly used technology for FETs.

Maximum Operating Temperature: 150 °C

Can operate effectively in higher temperature environments.

Min Operating Temperature: -55 °C

Suitable for use in a wide range of temperature conditions.

Maximum Drain Current (ID): 1.6 A

Capable of handling moderate amounts of current flow.

Maximum Drain-Source On Resistance: 0.14 ohm

Low resistance results in efficient current flow and minimal heat generation.

Maximum Feedback Capacitance (Crss): 16 pF

Low feedback capacitance ensures stable and reliable operation.

Reference Standard: AEC-Q101

Compliance with automotive electronic component standards for reliability and quality.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN6140LQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

16 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN6140LQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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