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DMN62D0U-7

Diodes Incorporated

DMN62D0U-7 by Diodes Incorporated

Diodes Inc. DMN62D0U-7 is a N-channel FET with 60V DS breakdown voltage, 0.38A ID, and 2 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating temp range, and built-in diode for efficient power dissipation.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,133 parts In-Stock

1+ parts

$0.340

100+ parts

$0.127

1k+ parts

$0.085

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$0.065

4,133

$0.340

$0.127

$0.085

$0.065

Arrow

USA . 594,000 parts In-Stock

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$0.038

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$0.038

Verical

USA . 444,000 parts In-Stock

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$0.049

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$0.049

Element14

Singapore . 22,975 parts In-Stock

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$0.098

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$0.067

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$0.067

22,975

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$0.098

$0.067

$0.067

Farnell

UK . 4,999 parts In-Stock

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-

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$0.119

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$0.096

10k+ parts

$0.084

4,999

-

$0.119

$0.096

$0.084

Distributors (In-Stock)

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Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$0.066

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68

$0.066

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Bristol Electronics

USA . 776 parts In-Stock

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$0.150

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$0.075

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$0.052

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-

776

$0.150

$0.075

$0.052

-

TME

Poland . 124 parts In-Stock

1+ parts

$0.190

100+ parts

$0.089

1k+ parts

$0.054

10k+ parts

$0.035

124

$0.190

$0.089

$0.054

$0.035

Maritex

Poland . 5 parts In-Stock

1+ parts

$0.454

100+ parts

$0.102

1k+ parts

$0.069

10k+ parts

-

5

$0.454

$0.102

$0.069

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NAC Semi

USA . 195,000 parts In-Stock

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Vyrian

USA . 191,647 parts In-Stock

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Semtec, LLC

USA . 161,932 parts In-Stock

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Chip Stock

USA . 41,000 parts In-Stock

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Rutronik

Germany . 30,000 parts In-Stock

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$0.032

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$0.032

Dan-Mar Components

USA . 9,776 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 7,382 parts In-Stock

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Electronics Depot

USA . 2,790 parts In-Stock

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J2 Sourcing AB

Sweden . 13 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 191,684 parts In-Stock

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$0.025

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191,684

$0.025

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Semicontronic

India . 190,932 parts In-Stock

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$0.025

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$0.024

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$0.024

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190,932

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$0.024

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Argo Parts USA

USA . 817 parts In-Stock

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$0.065

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$0.063

817

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$0.063

Continental Prestige Electronics

USA . 23,165 parts In-Stock

1+ parts

$0.305

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$0.118

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$0.052

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$0.034

23,165

$0.305

$0.118

$0.052

$0.034

Corohmni

South Africa . 168 parts In-Stock

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$0.546

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$0.546

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.267

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$1.153

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$1.039

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40

$1.267

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$1.039

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Aztec Data Supply Inc.

USA . 3,188 parts In-Stock

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$1.380

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Modulus Dynamics

Lithuania . 13,184 parts In-Stock

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$1.871

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$1.871

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$1.871

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GreenTree Electronics

Israel . 120,000 parts In-Stock

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Kepictronics

USA . 6,290 parts In-Stock

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Lixinc

USA . 4,391 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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300

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$0.022

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$0.022

Overview

Discover the power and efficiency of the DMN62D0U-7 by Diodes Incorporated, a top-of-the-line Small Signal Field Effect Transistor perfect for switching applications. With its N-CHANNEL configuration and built-in diode, this transistor offers unparalleled performance and reliability. Whether you're looking to enhance your electronic devices or streamline your circuit designs, the DMN62D0U-7 delivers exceptional value and quality. Trust in Diodes Incorporated for cutting-edge technology and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON-resistance, making them more efficient for switching applications.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltages, suitable for various electronic circuits and applications.

Maximum Power Dissipation (Abs): 0.59 W

Efficient power handling capability, ensuring stability and reliability in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides good performance and reliability in switching applications.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, suitable for industrial applications.

Maximum Drain Current (ID): 0.38 A

Able to handle higher currents, suitable for applications requiring higher power.

Maximum Drain-Source On Resistance: 2 ohm

Low ON-resistance helps in minimizing power losses and improving efficiency in switching circuits.

Maximum Feedback Capacitance (Crss): 2.4 pF

Low feedback capacitance allows for faster switching speeds and better performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN62D0U-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.38 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.4 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN62D0U-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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