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DMN62D0UDW-13

Diodes Incorporated

DMN62D0UDW-13 by Diodes Incorporated

DMN62D0UDW-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.35A max drain current, and 2 ohm max on resistance. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$0.191

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5 parts In-Stock

1+ parts

$0.330

100+ parts

$0.126

1k+ parts

$0.074

10k+ parts

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5

$0.330

$0.126

$0.074

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Verical

USA . 40,000 parts In-Stock

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$0.052

40,000

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$0.052

Distributors (In-Stock)

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Vyrian

USA . 17,836 parts In-Stock

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17,836

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Nova Conductors

Japan . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Semicontronic

India . 18,150 parts In-Stock

1+ parts

$0.044

100+ parts

$0.043

1k+ parts

$0.043

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18,150

$0.044

$0.043

$0.043

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Ampacity Inc.

Singapore . 17,888 parts In-Stock

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$0.044

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17,888

$0.044

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.378

100+ parts

$0.344

1k+ parts

$0.310

10k+ parts

-

600

$0.378

$0.344

$0.310

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Corohmni

South Africa . 492 parts In-Stock

1+ parts

$0.667

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492

$0.667

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Aztec Data Supply Inc.

USA . 2,985 parts In-Stock

1+ parts

$1.580

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2,985

$1.580

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Continental Prestige Electronics

USA . 6,565 parts In-Stock

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6,565

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Argo Parts USA

USA . 358 parts In-Stock

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358

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Bastille Electronics

Australia . 27 parts In-Stock

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27

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Overview

Discover the power of the DMN62D0UDW-13 by Diodes Incorporated, a top-quality N-CHANNEL Small Signal Field Effect Transistor. Designed with precision and reliability in mind, this transistor offers seamless switching capabilities ideal for a variety of applications. With its durable plastic/epoxy package body and built-in diode, this transistor ensures peak performance and efficiency. Trust in Diodes Incorporated to deliver cutting-edge technology that drives innovation and success in your projects. Experience the difference with the DMN62D0UDW-13 - your solution for high-performance electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the transistor, ensuring reliable performance over time.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher current-carrying capability compared to P-channel transistors, making them suitable for various switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode helps to protect the transistor from voltage spikes and reverse polarity conditions, enhancing its reliability in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in various electronic circuits.

Surface Mount: YES

This surface-mountable transistor offers space-saving benefits and is suitable for automated assembly processes, making it ideal for applications where PCB space is limited.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages without experiencing electrical breakdown, ensuring reliable operation in different circuits.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient PCB layout and placement, facilitating ease of assembly and space optimization in electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology enables the transistor to achieve high switching speeds, low power consumption, and improved efficiency in electronic circuits.

Maximum Drain Current (ID): 0.35 A

With a maximum drain current of 0.35 A, this transistor can handle moderate current loads in switching applications, ensuring stable and reliable performance.

Maximum Drain-Source On Resistance: 2 ohm

The low on-resistance of 2 ohms minimizes power losses and heat generation in the transistor, improving efficiency and overall performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN62D0UDW-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.35 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN62D0UDW-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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