Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DMN6140LQ-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 1.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
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Nova Conductors
$0.120
TME
$0.370
$0.193
$0.125
$0.090
NAC Semi
Vyrian
Ampacity Inc.
$0.067
Argo Parts USA
$0.116
Continental Prestige Electronics
$0.117
Netroflash
$0.114
Semicontronic
$0.146
$0.142
Aztec Data Supply Inc.
$1.220
Advanced Electronics
$1.883
$1.789
Corohmni
$1.944
GreenTree Electronics
Provides durability and protection for the transistor, ensuring longevity and reliability in various environments.
Allows for efficient control and switching of electrical signals, making it suitable for a wide range of applications.
The built-in diode enhances the functionality of the transistor, offering additional features and versatility in circuit design.
Designed specifically for switching applications, providing fast and efficient performance when handling signals.
Enables easy and secure mounting on circuit boards, saving space and enhancing overall design flexibility.
With a high breakdown voltage, the transistor can safely handle higher voltages, increasing its utility in various electronic systems.
The rectangular shape simplifies placement and integration into circuit layouts, improving overall design efficiency.
The gull wing terminals offer secure connections and easy soldering, ensuring a stable electrical connection.
Enhancement mode transistors are easier to control and provide enhanced performance characteristics, making them ideal for a wide range of applications.
With three terminals, the transistor offers straightforward connectivity options for various circuit configurations.
The high power dissipation capability allows the transistor to handle significant power levels, making it suitable for demanding applications.
The small outline package style saves space on the circuit board, enabling compact designs and efficient use of available area.
Metal-oxide semiconductor technology offers excellent performance and reliability, ensuring stable operation in various conditions.
With a high maximum operating temperature, the transistor can withstand elevated temperatures, extending its operational range.
Silicon transistors offer high performance and reliability, ensuring consistent operation in different applications.
The wide temperature range allows the transistor to function in low-temperature environments, providing flexibility for various applications.
Matte tin finish enhances solderability and conductivity, ensuring reliable electrical connections in circuit applications.
The high maximum drain current rating allows the transistor to handle significant current loads, making it suitable for power applications.
Low drain-source on resistance minimizes power loss and improves efficiency in switching applications, enhancing overall performance.
Dual terminal position provides additional wiring options and flexibility in circuit design, accommodating various connection requirements.
The specified time at peak reflow temperature ensures proper soldering and reflow processes, maintaining the integrity of the transistor.
The high peak reflow temperature capability allows for reliable soldering and ensures secure connections in electronic assemblies.
Low feedback capacitance minimizes signal distortion and improves high-frequency performance, ensuring accurate signal processing.
Compliance with AEC-Q101 standard ensures high quality and reliability, making the transistor suitable for automotive and industrial applications.
Small Signal Field Effect Transistors (FET) DMN6140LQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMN6140LQ-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev 04/Dec/2020
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
USB3320C-EZK-TR
Microchip Technology
Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
SMBJ18CA
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
Bkc Semiconductors
2N2222A
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
PIC18F4550-I/P
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
Meritek Electronics
General Semiconductor
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSD316SNH6327XTSA1
Infineon Technologies
Infineon's BSD316SNH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for automotive applications. Featuring single configuration with built-in diode, it has 6 terminals in gull wing form and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp, it offers low 0.0016 ohm RDS(on) for efficient performance.
BS170G
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
BSL308PEH6327XTSA1
BSL308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for applications requiring high drain current up to 2A, low on-resistance of 0.08 ohm, and AEC-Q101 compliance.
2N7002BKM,315
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
BSN20BKR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.2 ohm;
FDN337N
Onsemi's FDN337N is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.2A, 0.065 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C temperature, making it suitable for various electronic devices.
MMBF170
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING; Terminal Position: DUAL;
FDN352AP
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
2N7002T
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; No. of Elements: 1; Maximum Drain Current (ID): .115 A;
SI2323DS-T1-E3
Vishay Intertechnology
SI2323DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. The transistor's small outline package and -55 to 150 °C temperature range make it versatile for various electronic designs.
LBSS123LT1G
Leshan Radio
LBSS123LT1G by Leshan Radio is a N-CHANNEL FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.17A Drain Current and 6 ohm On Resistance. Ideal for small signal applications requiring high voltage tolerance and low power dissipation in compact designs.
FDC640P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
SI2347DS-T1-GE3
SI2347DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5A, 0.042 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temperature of 260°C, it is suitable for various electronic devices requiring high power dissipation.
BSS123L6327
Infineon's BSS123L6327 is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 6ohm On Resistance. With Matte Tin finish, it can withstand -55 to 150 °C temperatures.
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7000_D74Z
2N7000_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A Drain Current and 5 ohm On Resistance. Suitable for low-power circuits due to its 0.4W Power Dissipation and 150°C Operating Temperature range.
BSS83PH6327
BSS83PH6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage. It features a single configuration with built-in diode, 0.33A max drain current, and 3 ohm max on resistance. Ideal for small outline applications requiring low power dissipation and high operating temperatures up to 150°C.
2N7002CK,215
NXP Semiconductors
NXP Semiconductors' 2N7002CK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.35W.
NTJD5121NT1G
NTJD5121NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.295A max drain current, and 1.6 ohm max on resistance. Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin/Lead (Sn/Pb);
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DMN6140L-7
DMN6140L-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode with 0.14 ohm RDS(on). This small outline transistor has a matte tin finish and meets AEC-Q101 standards for automotive use.
DMN65D8L-7
Diodes Inc.'s DMN65D8L-7 is a N-channel FET with 60V DS breakdown voltage, 0.27A ID, and 4 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
DMN6140L-13
DMN6140L-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, matte tin finish, and operates in enhancement mode. This small outline transistor has a max drain-source on resistance of 0.14 ohm and meets AEC-Q101 standards for automotive use.
DMN63D8LDW-7
DMN63D8LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.22A max drain current, and 4.5 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and enhancement mode operation.
DMN6075S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; JESD-609 Code: e3; No. of Elements: 1;
DMN6140LQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1;
DMN65D8LDW-7
DMN65D8LDW-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, operating at up to 150°C.
DMN62D0U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .59 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
DMN6040SSD-13
DMN6040SSD-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.04 ohm RDS(on), and 5A ID. It is used for switching applications in automotive electronics, featuring a small outline package with 8 terminals and matte tin finish.
DMN62D4LDW-7
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
DMN62D0U-7
Diodes Inc. DMN62D0U-7 is a N-channel FET with 60V DS breakdown voltage, 0.38A ID, and 2 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating temp range, and built-in diode for efficient power dissipation.
DMN62D0UW-7
DMN62D0UW-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.47W and peak reflow temp of 260°C, it's suitable for small outline packages in automotive electronics (AEC-Q101).
DMN6040SVT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
DMN60H080DS-7
DMN60H080DS-7 by Diodes Inc. is a N-channel MOSFET with a min DS breakdown voltage of 600V. It has a max drain current of 0.07A and a max drain-source on resistance of 290 ohm. This transistor is commonly used for switching applications.
DMN63D8LV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .45 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN62D0UDW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN63D8LDW-13
DMN63D8LDW-13 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.22A, and max drain-source on resistance of 4.5Ω. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.
DMN63D8LW-13
DMN63D8LW-13 by Diodes Inc. is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.38A ID, and 4.5Ω RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and AEC-Q101 standard compliance.
DMN62D0UDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Additional Features: HIGH RELIABILITY; Maximum Drain-Source On Resistance: 2 ohm;
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