Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DMN63D8LV-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.26A, and max power dissipation of 0.45W. This small outline transistor operates in enhancement mode at temperatures up to 150°C, making it suitable for various electronic devices.
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Formix International (Excess)
This material is commonly used in electronic components for its durability and cost-effectiveness.
N-channel FETs generally have better performance characteristics compared to P-channel FETs, making this product a good choice for various applications.
Designed for switching applications, this FET offers fast response times and efficient operation.
With a minimum breakdown voltage of 30V, this FET can handle higher voltages without failing, ensuring reliability in the circuit.
With a maximum drain current of 0.26A, this FET can handle moderate current loads effectively.
The maximum power dissipation of 0.45W ensures that the FET can handle power efficiently without overheating.
With a maximum operating temperature of 150°C, this FET can withstand higher temperatures, making it suitable for a wide range of applications.
With a low drain-source on resistance, this FET offers efficient conduction and minimal power loss.
Small Signal Field Effect Transistors (FET) DMN63D8LV-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMN63D8LV-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev A/T Site 31/Mar/2021
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
BAV99
Secos
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Weitron Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MBR0520LT1G
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
1N4148WT
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Transys Electronics
Formosa Microsemi
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N7002ET1G
2N7002ET1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with 2.5 ohm RDS(on) and can handle up to 0.3W power dissipation.
2N7002DW
Onsemi's 2N7002DW is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A max drain current, and 7.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a peak reflow temp of 260C and -55 to 150C operating range.
BC548B
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel;
NTR4101PT1G
NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
BSS84AKM,315
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MMBF170
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .55 W;
LND150N3-GP005
Microchip Technology
LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
FDN304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
NX3008CBKS,115
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .35 A; Terminal Form: GULL WING; No. of Terminals: 6;
BSS138LT1
Onsemi's BSS138LT1 is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C temperature range. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
NTR5103NT1G
NTR5103NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.26A drain current, and 2.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.42W at 150°C.
BSS306NH6327XTSA1
Infineon Technologies
BSS306NH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 30V DS Breakdown Voltage and 2.3A ID. It features a 0.057 ohm RDS(on) and 17pF Crss, suitable for small signal applications in electronics requiring high drain current capabilities. The PLASTIC/EPOXY package with GULL WING terminals makes it ideal for surface mount designs in enhancement mode operation.
NTR4502PT1G
NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
2N7000/D74Z
2N7000/D74Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A ID and 5 ohm RDS(on). Suitable for low-power circuits due to 0.4W Pdiss and 150°C Tjmax.
2N7002K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;
MMBF170LT3
MMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 0.225W power dissipation, it offers reliable performance in small outline packages.
ZVN3306FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .15 A; Maximum Drain-Source On Resistance: 5 ohm;
BSS123Q-13
Diodes Incorporated
BSS123Q-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on-resistance. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.
FDC5612
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
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DMN6140L-7
DMN6140L-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode with 0.14 ohm RDS(on). This small outline transistor has a matte tin finish and meets AEC-Q101 standards for automotive use.
DMN65D8L-7
Diodes Inc.'s DMN65D8L-7 is a N-channel FET with 60V DS breakdown voltage, 0.27A ID, and 4 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
DMN6140L-13
DMN6140L-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, matte tin finish, and operates in enhancement mode. This small outline transistor has a max drain-source on resistance of 0.14 ohm and meets AEC-Q101 standards for automotive use.
DMN63D8LDW-7
DMN63D8LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.22A max drain current, and 4.5 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and enhancement mode operation.
DMN6075S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; JESD-609 Code: e3; No. of Elements: 1;
DMN6140LQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1;
DMN65D8LDW-7
DMN65D8LDW-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, operating at up to 150°C.
DMN62D0U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .59 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
DMN6040SSD-13
DMN6040SSD-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.04 ohm RDS(on), and 5A ID. It is used for switching applications in automotive electronics, featuring a small outline package with 8 terminals and matte tin finish.
DMN62D4LDW-7
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
DMN6140LQ-13
DMN6140LQ-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 1.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
DMN62D0U-7
Diodes Inc. DMN62D0U-7 is a N-channel FET with 60V DS breakdown voltage, 0.38A ID, and 2 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating temp range, and built-in diode for efficient power dissipation.
DMN62D0UW-7
DMN62D0UW-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.47W and peak reflow temp of 260°C, it's suitable for small outline packages in automotive electronics (AEC-Q101).
DMN6040SVT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
DMN60H080DS-7
DMN60H080DS-7 by Diodes Inc. is a N-channel MOSFET with a min DS breakdown voltage of 600V. It has a max drain current of 0.07A and a max drain-source on resistance of 290 ohm. This transistor is commonly used for switching applications.
DMN62D0UDW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN63D8LDW-13
DMN63D8LDW-13 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.22A, and max drain-source on resistance of 4.5Ω. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.
DMN63D8LW-13
DMN63D8LW-13 by Diodes Inc. is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.38A ID, and 4.5Ω RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and AEC-Q101 standard compliance.
DMN62D0UDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Additional Features: HIGH RELIABILITY; Maximum Drain-Source On Resistance: 2 ohm;
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