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DMN60H080DS-7

Diodes Incorporated

DMN60H080DS-7 by Diodes Incorporated

DMN60H080DS-7 by Diodes Inc. is a N-channel MOSFET with a min DS breakdown voltage of 600V. It has a max drain current of 0.07A and a max drain-source on resistance of 290 ohm. This transistor is commonly used for switching applications.

Median Price

$0.226

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,080 parts In-Stock

1+ parts

$0.410

100+ parts

$0.159

1k+ parts

$0.105

10k+ parts

$0.074

1,080

$0.410

$0.159

$0.105

$0.074

Mouser Electronics

USA . 376 parts In-Stock

1+ parts

$0.490

100+ parts

$0.188

1k+ parts

$0.123

10k+ parts

-

376

$0.490

$0.188

$0.123

-

Arrow

USA . 180,000 parts In-Stock

1+ parts

-

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$0.043

180,000

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-

$0.043

Verical

USA . 180,000 parts In-Stock

1+ parts

-

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$0.043

180,000

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-

$0.043

Distributors (In-Stock)

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Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$0.098

100+ parts

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71

$0.098

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Flip Electronics

USA . 102,000 parts In-Stock

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$0.218

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102,000

$0.218

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Vyrian

USA . 106,823 parts In-Stock

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106,823

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NAC Semi

USA . 78,000 parts In-Stock

1+ parts

-

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$0.332

78,000

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$0.332

Chip Stock

USA . 42,285 parts In-Stock

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42,285

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Bristol Electronics

USA . 42,000 parts In-Stock

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42,000

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Elcom Components

USA . 1,068 parts In-Stock

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1,068

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Distributors (Availability)

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Ampacity Inc.

Singapore . 106,751 parts In-Stock

1+ parts

$0.036

100+ parts

-

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106,751

$0.036

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Semicontronic

India . 78,104 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

10k+ parts

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78,104

$0.037

$0.036

$0.036

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

$0.092

10k+ parts

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2,000

$0.096

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$0.092

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Continental Prestige Electronics

USA . 5,619 parts In-Stock

1+ parts

$0.098

100+ parts

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1k+ parts

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$0.096

5,619

$0.098

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$0.096

Argo Parts USA

USA . 3,491 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

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$0.095

3,491

$0.098

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-

$0.095

Corohmni

South Africa . 67 parts In-Stock

1+ parts

$1.004

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67

$1.004

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Aztec Data Supply Inc.

USA . 95 parts In-Stock

1+ parts

$1.860

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95

$1.860

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Lixinc

USA . 11,506 parts In-Stock

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11,506

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Overview

Discover the power of the DMN60H080DS-7 by Diodes Incorporated, a leading manufacturer trusted for its top-quality electronic components. Designed for switching applications, this small signal field effect transistor offers unparalleled performance and reliability. Its N-channel configuration and built-in diode ensure seamless operation, while its enhancement mode allows for enhanced functionality. With a minimum DS breakdown voltage of 600V, this transistor is ideal for demanding projects. Its surface mount technology and gull wing terminals make installation a breeze. Experience the benefits of the DMN60H080DS-7 today and unlock endless possibilities in your electronic designs.

Feature Benefit Bullets

Small Signal Field Effect Transistor (FET)

Provides efficient switching capabilities for various applications, enhancing performance and reducing power consumption.

N-Channel Configuration

Enables the transistor to handle high voltage levels, ensuring reliable and safe operation.

Single with Built-in Diode

Simplifies circuit design by incorporating a diode into the transistor, saving space and reducing component count.

Switching Application

Ideal for applications requiring fast switching speeds, allowing for quick response times and improved overall performance.

Surface Mountable

Allows for easy and convenient installation on printed circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage of 600V

Ensures safe operation in high voltage environments, providing protection against voltage spikes or surges.

Rectangular Package Shape

Offers compatibility with standard PCB layouts, making it easier to integrate into existing designs.

Gull Wing Terminal Form

Facilitates soldering and improves mechanical stability, ensuring secure connections and reducing the risk of electrical failures.

Enhancement Mode Operating Mode

Enhances control over the transistor's behavior, enabling precise regulation and optimization of switching operations.

Metal-Oxide Semiconductor Technology

Delivers high performance and reliability, contributing to the overall durability and longevity of the transistor.

Silicon Transistor Element Material

Provides excellent electrical properties, ensuring efficient signal amplification and low power consumption.

Matte Tin Terminal Finish

Enhances solderability and prevents oxidation, ensuring reliable and durable electrical connections.

Maximum Drain Current (ID) of 0.07A

Allows for the handling of moderate current loads, supporting a wide range of applications.

Maximum Drain-Source On Resistance of 290 ohm

Minimizes power loss and heat generation, improving overall efficiency and reducing operating costs.

Dual Terminal Position

Offers flexibility in circuit design and allows for both vertical and horizontal mounting options.

Moisture Sensitivity Level (MSL) of 1

Ensures resistance to moisture-related damages, ensuring long-term reliability and performance.

Peak Reflow Temperature of 260°C

Withstands high-temperature soldering processes, ensuring reliable connections during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN60H080DS-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.07 A

Maximum Drain-Source On Resistance:

290 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN60H080DS-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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