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DMN63D8LDW-13

Diodes Incorporated

DMN63D8LDW-13 by Diodes Incorporated

DMN63D8LDW-13 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.22A, and max drain-source on resistance of 4.5Ω. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 418,566 parts In-Stock

1+ parts

$0.260

100+ parts

$0.097

1k+ parts

$0.056

10k+ parts

$0.034

418,566

$0.260

$0.097

$0.056

$0.034

DigiKey

USA . 2 parts In-Stock

1+ parts

$0.270

100+ parts

$0.104

1k+ parts

$0.067

10k+ parts

$0.052

2

$0.270

$0.104

$0.067

$0.052

Newark

USA . 4,040 parts In-Stock

1+ parts

$0.278

100+ parts

$0.106

1k+ parts

$0.069

10k+ parts

-

4,040

$0.278

$0.106

$0.069

-

Arrow

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

40,000

-

-

-

$0.035

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.032

10,000

-

-

-

$0.032

Farnell

UK . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.049

10k+ parts

$0.048

10,000

-

$0.097

$0.049

$0.048

Element14

Singapore . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.089

1k+ parts

$0.049

10k+ parts

$0.048

10,000

-

$0.089

$0.049

$0.048

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 30 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

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-

30

$0.062

-

-

-

NAC Semi

USA . 430,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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430,000

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Vyrian

USA . 303,446 parts In-Stock

1+ parts

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303,446

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Chip Stock

USA . 105,300 parts In-Stock

1+ parts

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105,300

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Semtec, LLC

USA . 52,736 parts In-Stock

1+ parts

-

100+ parts

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52,736

-

-

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IBS Electronics

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

50,000

-

-

-

$0.041

Prism Electronics

USA . 127 parts In-Stock

1+ parts

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127

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 102,202 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

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102,202

$0.025

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Semicontronic

India . 102,107 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

10k+ parts

-

102,107

$0.025

$0.024

$0.024

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Continental Prestige Electronics

USA . 1,396 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

1,396

$0.061

-

-

$0.060

Argo Parts USA

USA . 706 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

-

10k+ parts

$0.059

706

$0.061

-

-

$0.059

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.519

100+ parts

$0.472

1k+ parts

$0.426

10k+ parts

-

50

$0.519

$0.472

$0.426

-

Corohmni

South Africa . 365 parts In-Stock

1+ parts

$1.578

100+ parts

-

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365

$1.578

-

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Aztec Data Supply Inc.

USA . 567 parts In-Stock

1+ parts

$1.860

100+ parts

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567

$1.860

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GreenTree Electronics

Israel . 2,330,000 parts In-Stock

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Lixinc

USA . 14,296 parts In-Stock

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14,296

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.060

1k+ parts

$0.059

10k+ parts

$0.057

2,000

-

$0.060

$0.059

$0.057

Kepictronics

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Overview

Looking to enhance your electronic devices with reliable and efficient performance? Look no further than the DMN63D8LDW-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-quality small signal field effect transistors that are perfect for switching applications. With a robust design and built-in diode elements, this N-channel transistor offers a seamless operation and maximum efficiency. Upgrade your devices today and experience the value and benefits of the DMN63D8LDW-13!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching performance in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility for different circuit configurations and applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliability and efficiency.

Surface Mount: YES

Allows for easy and convenient placement on circuit boards.

Minimum DS Breakdown Voltage: 30 V

Provides a margin of safety for voltage spikes and fluctuations in the circuit.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit designs.

Terminal Form: GULL WING

Enables secure soldering and connection to circuit boards.

Operating Mode: ENHANCEMENT MODE

Allows for enhanced control over the transistor's operation in switching applications.

No. of Elements: 2

Provides dual functionality for increased performance and flexibility.

No. of Terminals: 6

Offers multiple connection points for versatile circuit configurations.

Package Style (Meter): SMALL OUTLINE

Space-saving design for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and efficiency in electronic circuits.

Transistor Element Material: SILICON

Known for its reliability and durability in semiconductor devices.

Terminal Finish: MATTE TIN

Ensures good conductivity and reliability in circuit connections.

Maximum Drain Current (ID): 0.22 A

Can handle higher current loads for increased application versatility.

Maximum Drain-Source On Resistance: 4.5 ohm

Provides low resistance for efficient switching performance.

Terminal Position: DUAL

Enables easy and flexible circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and connection during manufacturing processes.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Meets industry standards for quality and reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN63D8LDW-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.22 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN63D8LDW-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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