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DMC2038LVT-7

Diodes Incorporated

DMC2038LVT-7 by Diodes Incorporated

DMC2038LVT-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode for switching applications. Features include 20V DS breakdown voltage, 4.5A max drain current, and 0.035 ohm max on resistance. Ideal for enhancement mode operation in various electronic circuits requiring high power dissipation up to 1.1W at temperatures ranging from -55°C to 150°C.

Median Price

$0.128

Lifecycle Status

Suppliers In-Stock

27

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1k+

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RS (Exports)

UK . 1,400 parts In-Stock

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RS Americas

USA . 1,400 parts In-Stock

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$0.320

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$0.199

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Newark

USA . 4,279 parts In-Stock

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Verical

USA . 948,000 parts In-Stock

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Arrow

USA . 147,000 parts In-Stock

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Element14

Singapore . 18,301 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 59 parts In-Stock

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TME

Poland . 2,384 parts In-Stock

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$0.310

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$0.146

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$0.092

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$0.078

2,384

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$0.078

Bristol Electronics

USA . 49 parts In-Stock

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$0.375

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$0.188

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Maritex

Poland . 1,821 parts In-Stock

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$0.708

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$0.174

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$0.131

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$0.109

1,821

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Rutronik

Germany . 219,000 parts In-Stock

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Vyrian

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Chip Stock

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IBS Electronics

USA . 9,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,124 parts In-Stock

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Micros

Poland . 3,000 parts In-Stock

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Partservice

France . 3,000 parts In-Stock

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$0.084

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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$0.097

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LIBRA Elektronik GmbH

Germany . 2,156 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,806 parts In-Stock

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Sensible Micro Corp

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Connector Distribution Corp

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Right Parts Inc.

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Contempo Components LLC

USA . 347 parts In-Stock

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Cogito LLC

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Semtec, LLC

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Ampacity Inc.

Singapore . 146,556 parts In-Stock

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Semicontronic

India . 146,555 parts In-Stock

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Argo Parts USA

USA . 1,490 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Allen Electronics Distributors

USA . 1,400 parts In-Stock

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Corohmni

South Africa . 140 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.818

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$0.777

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Aztec Data Supply Inc.

USA . 163 parts In-Stock

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$1.240

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Modulus Dynamics

Lithuania . 1,883 parts In-Stock

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Futuretech Components

Singapore . 998,809 parts In-Stock

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Epart123

USA . 63,000 parts In-Stock

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S.R.D Solutions

India . 39,000 parts In-Stock

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Robosynatics

Brazil . 21,925 parts In-Stock

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Lucentia Tech

USA . 21,925 parts In-Stock

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ChipstoGo Electronic ltd

UK . 18,270 parts In-Stock

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Lixinc

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 5,179 parts In-Stock

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iodParts Technologies Inc.

India . 4,575 parts In-Stock

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Kepictronics

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Speed Components Ltd (Excess)

Israel . 1,935 parts In-Stock

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Formix International (Excess)

India . 1,384 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DMC2038LVT-7 by Diodes Incorporated. Crafted with precision and expertise, this small signal field effect transistor offers unmatched performance and reliability. Whether you're in need of a compact solution for switching applications or seeking enhanced efficiency, this transistor delivers beyond expectations. With its N-channel and P-channel configuration, separate elements, and built-in diode, the DMC2038LVT-7 is designed to elevate your projects to new heights. Trust in Diodes Incorporated to bring you quality products that push boundaries and exceed industry standards. Elevate your electronics with the DMC2038LVT-7 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile applications in various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode enhances the product's functionality and efficiency.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for use in a wide range of electronic devices.

Surface Mount: YES

Being surface mountable simplifies the installation process and saves space on the circuit board.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V ensures reliable operation and protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and allows for easy placement on the PCB.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical stability and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode enhances the efficiency and performance of the transistor in various applications.

No. of Elements: 2

Having 2 elements allows for increased functionality and flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 4.5 A

The high maximum drain current of 4.5A offers the capability to handle demanding current loads.

No. of Terminals: 6

With 6 terminals, there are more connection options available for versatility in circuit design.

Maximum Power Dissipation (Abs): 1.1 W

The high power dissipation capability of 1.1W ensures reliable performance under heavy load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for dense circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology ensures high-speed operation and low power consumption.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides high efficiency, durability, and reliability in the transistor's performance.

Minimum Operating Temperature: -55 °C

The minimum operating temperature of -55°C allows for reliable operation in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance for long-lasting performance.

Maximum Drain Current (ID): 2.9 A

The maximum drain current of 2.9A ensures reliable performance under high-load conditions.

Maximum Drain-Source On Resistance: 0.035 ohm

The low drain-source on resistance of 0.035 ohm minimizes power loss and improves efficiency in operation.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and installation options.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at peak reflow temperature of 30 seconds ensures proper soldering of the components.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures the proper melting and bonding of solder during assembly.

Maximum Feedback Capacitance (Crss): 100 pF

The maximum feedback capacitance of 100pF minimizes signal distortion and ensures stable operation in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2038LVT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

2.9 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

100 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2038LVT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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