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DMC2990UDJ-7B

Diodes Incorporated

DMC2990UDJ-7B by Diodes Incorporated

DMC2990UDJ-7B by Diodes Inc. is a Small Signal FET with N/P-channel types, suitable for switching applications. It features 2 elements with built-in diode in a rectangular package, operating in enhancement mode. With a max drain current of 0.31A and on-resistance of 0.99 ohm, it can handle up to 150°C temperature range efficiently.

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3

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1k+

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USA . 36,000 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

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Aztec Data Supply Inc.

USA . 2,509 parts In-Stock

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Corohmni

South Africa . 882 parts In-Stock

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$1.994

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AZTECH Wire

Italy . 192 parts In-Stock

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$6.094

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

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$21.050

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Semicontronic

India . 1,042 parts In-Stock

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$31.050

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$30.274

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$30.118

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Perfect Parts

USA . 89,600 parts In-Stock

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S.R.D Solutions

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Assy Fe

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Argo Parts USA

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Robosynatics

Brazil . 300 parts In-Stock

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$5.648

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Lucentia Tech

USA . 300 parts In-Stock

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$5.648

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Continental Prestige Electronics

USA . 179 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of small signal field effect transistors with the DMC2990UDJ-7B by Diodes Incorporated. With a reputation for high-quality components, Diodes Incorporated delivers superior performance and reliability in every product. Ideal for switching applications, this N-CHANNEL AND P-CHANNEL transistor offers enhanced mode operation and built-in diodes, providing unmatched versatility and efficiency. Say goodbye to compromised performance and hello to seamless functionality with the DMC2990UDJ-7B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers flexibility in circuit design by providing both N-channel and P-channel options.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for easy integration into circuits with separate elements and includes a built-in diode for added functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Can be easily mounted on PCBs, making the manufacturing process more efficient.

Minimum DS Breakdown Voltage: 20 V

Can handle higher voltages, ensuring stability and reliability in different operating conditions.

Maximum Power Dissipation (Abs): 0.35 W

Capable of dissipating heat effectively, preventing overheating and potential damage.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, suitable for various applications.

Maximum Drain-Source On Resistance: 0.99 ohm

Offers low resistance for efficient power transfer, enhancing overall performance.

Reference Standard: AEC-Q101

Complies with industry standards, ensuring quality and reliability in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2990UDJ-7B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.31 A

Maximum Drain-Source On Resistance:

.99 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.35 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2990UDJ-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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