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DMC2004DWK-7

Diodes Incorporated

DMC2004DWK-7 by Diodes Incorporated

DMC2004DWK-7 by Diodes Inc. is a small signal FET with N/P-channel polarity, 2 elements with built-in diode configuration, and 0.54A max drain current. Ideal for switching applications, it operates in enhancement mode at up to 150°C, with a max power dissipation of 0.25W in a small outline package.

Median Price

$0.165

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 15,000 parts In-Stock

1+ parts

$0.419

100+ parts

$0.156

1k+ parts

$0.140

10k+ parts

$0.132

15,000

$0.419

$0.156

$0.140

$0.132

Mouser Electronics

USA . 17,877 parts In-Stock

1+ parts

$0.800

100+ parts

$0.322

1k+ parts

$0.221

10k+ parts

$0.188

17,877

$0.800

$0.322

$0.221

$0.188

Newark

USA . 1,188 parts In-Stock

1+ parts

$0.824

100+ parts

$0.331

1k+ parts

$0.227

10k+ parts

-

1,188

$0.824

$0.331

$0.227

-

DigiKey

USA . 204,556 parts In-Stock

1+ parts

-

100+ parts

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$0.165

204,556

-

-

-

$0.165

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.155

3,000

-

-

-

$0.155

Farnell

UK . 1,575 parts In-Stock

1+ parts

-

100+ parts

$0.160

1k+ parts

$0.148

10k+ parts

$0.141

1,575

-

$0.160

$0.148

$0.141

Element14

Singapore . 1,575 parts In-Stock

1+ parts

-

100+ parts

$0.162

1k+ parts

-

10k+ parts

-

1,575

-

$0.162

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 9 parts In-Stock

1+ parts

$0.149

100+ parts

$0.080

1k+ parts

$0.075

10k+ parts

$0.068

9

$0.149

$0.080

$0.075

$0.068

TME

Poland . 1,185 parts In-Stock

1+ parts

$0.460

100+ parts

$0.179

1k+ parts

$0.155

10k+ parts

-

1,185

$0.460

$0.179

$0.155

-

IBS Electronics

USA . 7,620 parts In-Stock

1+ parts

$1.290

100+ parts

$1.150

1k+ parts

-

10k+ parts

$0.884

7,620

$1.290

$1.150

-

$0.884

Chip Stock

USA . 152,500 parts In-Stock

1+ parts

-

100+ parts

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152,500

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Vyrian

USA . 46,165 parts In-Stock

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46,165

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North Shore Components

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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30,000

-

-

-

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.627

6,000

-

-

-

$0.627

Semtec, LLC

USA . 450 parts In-Stock

1+ parts

-

100+ parts

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450

-

-

-

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Prism Electronics

USA . 78 parts In-Stock

1+ parts

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78

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 328,221 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

328,221

$0.050

$0.050

$0.050

$0.050

Semicontronic

India . 51,813 parts In-Stock

1+ parts

$0.086

100+ parts

$0.084

1k+ parts

$0.083

10k+ parts

-

51,813

$0.086

$0.084

$0.083

-

Ampacity Inc.

Singapore . 46,363 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

-

10k+ parts

-

46,363

$0.086

-

-

-

Aztec Data Supply Inc.

USA . 3,733 parts In-Stock

1+ parts

$0.630

100+ parts

-

1k+ parts

-

10k+ parts

-

3,733

$0.630

-

-

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Corohmni

South Africa . 582 parts In-Stock

1+ parts

$1.860

100+ parts

-

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582

$1.860

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Perfect Parts

USA . 194,359 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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194,359

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-

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RC Electronics

USA . 99,930 parts In-Stock

1+ parts

-

100+ parts

$0.250

1k+ parts

$0.230

10k+ parts

$0.220

99,930

-

$0.250

$0.230

$0.220

Kepictronics

USA . 30,619 parts In-Stock

1+ parts

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30,619

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iodParts Technologies Inc.

India . 19,065 parts In-Stock

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19,065

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Lixinc

USA . 7,415 parts In-Stock

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7,415

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GreenTree Electronics

Israel . 6,000 parts In-Stock

1+ parts

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6,000

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Futuretech Components

Singapore . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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3,000

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Argo Parts USA

USA . 2,223 parts In-Stock

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2,223

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Alle Elektronik GmbH

Germany . 1,732 parts In-Stock

1+ parts

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1,732

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-

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Continental Prestige Electronics

USA . 607 parts In-Stock

1+ parts

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607

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Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

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10

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Overview

Enhance your electronic devices with the DMC2004DWK-7 by Diodes Incorporated, a high-quality small signal Field Effect Transistor (FET) designed for switching applications. With a compact rectangular package and gull wing terminals, this N-channel and P-channel transistor offers enhanced performance and reliability. The built-in diode and metal-oxide semiconductor technology ensure efficient operation, while the maximum operating temperature of 150°C guarantees durability. Upgrade your circuits with the DMC2004DWK-7 and experience seamless functionality and superior quality like never before.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the internal components, ensuring a longer lifespan.

Polarity or Channel Type

N-CHANNEL AND P-CHANNEL - Offers flexibility for different circuit configurations and applications.

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - Allows for more complex circuit designs and improved performance.

Transistor Application

SWITCHING - Ideal for applications that require high-speed switching and efficient power management.

Surface Mount

YES - Easy to integrate into circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage

20 V - Ensures reliable operation at various voltage levels, making it versatile for different applications.

Package Shape

RECTANGULAR - Easily fits into standard circuit designs and layouts.

Terminal Form

GULL WING - Facilitates efficient soldering during assembly, ensuring a secure connection.

Operating Mode

ENHANCEMENT MODE - Provides enhanced control over the transistor's operation for better performance.

No. of Elements

2 - Offers the ability to control multiple functions within a single component.

Maximum Drain Current (Abs) (ID)

0.54 A - Can handle high current loads without overheating, ensuring stable operation.

No. of Terminals

6 - Provides multiple connection points for versatile circuit designs.

Maximum Power Dissipation (Abs)

0.25 W - Efficiently manages power consumption, reducing heat generation and improving reliability.

Package Style (Meter)

SMALL OUTLINE - Compact design for space-constrained applications.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - Offers low power consumption and high efficiency.

Maximum Operating Temperature

150 °C - Can operate reliably in high-temperature environments, increasing the product's versatility.

Transistor Element Material

SILICON - Provides durability and high performance for various applications.

Terminal Finish

MATTE TIN - Enhances solderability for a secure electrical connection.

Maximum Drain-Source On Resistance

0.55 ohm - Low resistance for efficient power transfer and minimal heat generation.

Terminal Position

DUAL - Allows for flexible mounting options in circuit designs.

Maximum Time At Peak Reflow Temperature (s)

30 - Ensures reliable soldering during assembly, preventing damage to the component.

Peak Reflow Temperature °C

260 - Meets industry standards for soldering processes, ensuring component reliability.

Maximum Feedback Capacitance (Crss)

20 pF - Low capacitance for fast response times and improved circuit performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2004DWK-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

ESD PROTECTED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.54 A

Maximum Drain Current (ID):

.54 A

Maximum Drain-Source On Resistance:

.55 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2004DWK-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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