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DMC2400UV-13

Diodes Incorporated

DMC2400UV-13 by Diodes Incorporated

DMC2400UV-13 by Diodes Inc. is a Small Signal FET with N/P-Channel, 2 elements, and built-in diode for switching applications. It operates in enhancement mode with max drain current of 1.03A and on-resistance of 0.7 ohm. With a temp range of -55 to 150°C, it's ideal for compact designs requiring high power dissipation.

Median Price

$0.163

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 770 parts In-Stock

1+ parts

$0.419

100+ parts

$0.173

1k+ parts

$0.120

10k+ parts

-

770

$0.419

$0.173

$0.120

-

Mouser Electronics

USA . 78,822 parts In-Stock

1+ parts

$0.470

100+ parts

$0.177

1k+ parts

$0.115

10k+ parts

$0.066

78,822

$0.470

$0.177

$0.115

$0.066

Farnell

UK . 9,445 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.067

10k+ parts

$0.065

9,445

-

$0.126

$0.067

$0.065

Arrow

USA . 8,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

8,345

-

-

-

$0.040

Verical

USA . 8,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

8,345

-

-

-

$0.041

Element14

Singapore . 4,695 parts In-Stock

1+ parts

-

100+ parts

$0.200

1k+ parts

$0.115

10k+ parts

$0.100

4,695

-

$0.200

$0.115

$0.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 8,190 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

8,190

$0.080

-

-

-

DF Sales Co.

USA . 8,190 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

8,190

$0.080

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$0.094

-

-

-

Rebound Electronics

UK . 29,865 parts In-Stock

1+ parts

-

100+ parts

-

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-

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29,865

-

-

-

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Vyrian

USA . 28,976 parts In-Stock

1+ parts

-

100+ parts

-

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28,976

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-

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Chip Stock

USA . 25,000 parts In-Stock

1+ parts

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25,000

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NAC Semi

USA . 10,000 parts In-Stock

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10,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 26,832 parts In-Stock

1+ parts

$0.034

100+ parts

$0.033

1k+ parts

$0.033

10k+ parts

-

26,832

$0.034

$0.033

$0.033

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Ampacity Inc.

Singapore . 28,826 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

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28,826

$0.046

-

-

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Continental Prestige Electronics

USA . 5,519 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

5,519

$0.094

-

-

$0.092

Argo Parts USA

USA . 3,304 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

3,304

$0.094

-

-

$0.091

Corohmni

South Africa . 634 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

-

10k+ parts

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634

$0.307

-

-

-

Modulus Dynamics

Lithuania . 8,452 parts In-Stock

1+ parts

$0.348

100+ parts

$0.348

1k+ parts

$0.348

10k+ parts

-

8,452

$0.348

$0.348

$0.348

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.318

100+ parts

$1.252

1k+ parts

$1.252

10k+ parts

-

20

$1.318

$1.252

$1.252

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Aztec Data Supply Inc.

USA . 3,082 parts In-Stock

1+ parts

$1.630

100+ parts

-

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3,082

$1.630

-

-

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Perfect Parts

USA . 463,639 parts In-Stock

1+ parts

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463,639

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Futuretech Components

Singapore . 30,000 parts In-Stock

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Kepictronics

USA . 22,801 parts In-Stock

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22,801

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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$0.063

10,000

-

-

-

$0.063

iodParts Technologies Inc.

India . 9,895 parts In-Stock

1+ parts

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100+ parts

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9,895

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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500

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Overview

Unleash the power of innovation with the DMC2400UV-13 by Diodes Incorporated. This small signal field effect transistor (FET) offers unparalleled quality and reliability, making it a top choice for switching applications. With separate N-channel and P-channel elements, this transistor provides enhanced performance and efficiency. The DMC2400UV-13's compact design, high power dissipation, and wide operating temperature range ensure optimal functionality in any environment. Say goodbye to limitations and hello to endless possibilities with this cutting-edge technology from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and compatibility with different requirements.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode aids in better performance and efficiency in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and fast switching performance.

Surface Mount: YES

Being surface mountable makes it easy to integrate into circuit boards, saving space and improving assembly efficiency.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle a range of voltage levels effectively.

Maximum Power Dissipation (Abs): 1 W

The ability to dissipate up to 1W of power ensures stable and reliable operation even under high load conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without compromising performance.

Maximum Drain Current (ID): 1.03 A

The high maximum drain current rating of 1.03A allows for handling larger current loads, making it suitable for various applications.

Maximum Drain-Source On Resistance: 0.7 ohm

The low on-resistance helps in minimizing power loss and improving efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2400UV-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.03 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.9 pF

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2400UV-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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