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DMC2710UV-7

Diodes Incorporated

DMC2710UV-7 by Diodes Incorporated

DMC2710UV-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.8W power dissipation, and 0.4ohm RDS(on). Operating from -55 to 150°C, it has a dual-terminal package style suitable for SMT assembly.

Median Price

$0.378

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 3,000 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

$0.030

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-

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RS Americas

USA . 3,000 parts In-Stock

1+ parts

$0.378

100+ parts

$0.295

1k+ parts

$0.234

10k+ parts

-

3,000

$0.378

$0.295

$0.234

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Mouser Electronics

USA . 3,068 parts In-Stock

1+ parts

$0.490

100+ parts

$0.192

1k+ parts

$0.128

10k+ parts

$0.083

3,068

$0.490

$0.192

$0.128

$0.083

DigiKey

USA . 1,971 parts In-Stock

1+ parts

$0.490

100+ parts

$0.192

1k+ parts

$0.128

10k+ parts

-

1,971

$0.490

$0.192

$0.128

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Verical

USA . 135,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.076

135,000

-

-

-

$0.076

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

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150

$0.114

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-

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Vyrian

USA . 20,232 parts In-Stock

1+ parts

-

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20,232

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-

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

3,000

-

-

-

$0.098

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 20,152 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

20,152

$0.058

-

-

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.112

100+ parts

-

1k+ parts

$0.107

10k+ parts

-

500

$0.112

-

$0.107

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Continental Prestige Electronics

USA . 6,149 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

$0.112

6,149

$0.114

-

-

$0.112

Argo Parts USA

USA . 3,985 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

$0.111

3,985

$0.114

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-

$0.111

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.116

100+ parts

$0.116

1k+ parts

$0.116

10k+ parts

-

600

$0.116

$0.116

$0.116

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Allen Electronics Distributors

USA . 3,000 parts In-Stock

1+ parts

$0.182

100+ parts

$0.134

1k+ parts

-

10k+ parts

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3,000

$0.182

$0.134

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Aztec Data Supply Inc.

USA . 3,590 parts In-Stock

1+ parts

$0.595

100+ parts

-

1k+ parts

-

10k+ parts

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3,590

$0.595

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Corohmni

South Africa . 656 parts In-Stock

1+ parts

$1.130

100+ parts

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656

$1.130

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GreenTree Electronics

Israel . 12,000 parts In-Stock

1+ parts

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100+ parts

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12,000

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Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.090

10k+ parts

-

6,000

-

-

$0.090

-

Overview

Enhance your electronic projects with the DMC2710UV-7 by Diodes Incorporated, a top-quality small signal field effect transistor that offers exceptional performance and reliability. With Diodes Incorporated's reputation for excellence in semiconductor manufacturing, this N-CHANNEL AND P-CHANNEL transistor is perfect for switching applications, providing seamless operation and efficiency. Its compact design, surface-mount capability, and impressive power dissipation make it a valuable addition to any project where space and performance are key. Trust Diodes Incorporated to deliver superior components that exceed expectations.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Durable material for long-lasting performance.

Polarity or Channel Type:

N-CHANNEL AND P-CHANNEL - Versatile functionality for a variety of applications.

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - Enhanced capability with built-in diode for added functionality.

Transistor Application:

SWITCHING - Ideal for efficient switching operations.

Surface Mount:

YES - Easy installation and space-saving design for compact applications.

Minimum DS Breakdown Voltage:

20 V - Ensures reliable operation under varying voltage conditions.

Package Shape:

RECTANGULAR - Convenient shape for easy mounting and integration.

Terminal Form:

FLAT - Simplifies connectivity and soldering process.

Operating Mode:

ENHANCEMENT MODE - Efficient operation with enhanced performance capabilities.

No. of Elements:

2 - Dual elements for increased functionality and versatility.

No. of Terminals:

6 - Sufficient terminals for comprehensive connections.

Maximum Power Dissipation (Abs):

0.8 W - Handles high power levels for reliable operation.

Package Style (Meter):

SMALL OUTLINE - Compact design for space-constrained applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Utilizes advanced technology for efficient performance.

Maximum Operating Temperature:

150 °C - Ensures stable operation even at high temperatures.

Transistor Element Material:

SILICON - Reliable material for durable and consistent performance.

Minimum Operating Temperature:

55 °C - Capable of functioning in extreme temperature conditions.

Terminal Finish:

MATTE TIN - Corrosion-resistant finish for long-term reliability.

Maximum Drain Current (ID):

1.1 A - Handles high current levels for robust performance.

Maximum Drain-Source On Resistance:

0.4 ohm - Low resistance for efficient power transfer.

Terminal Position:

DUAL - Dual terminals for enhanced connectivity options.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures reliable soldering during installation.

Peak Reflow Temperature °C:

260 - Ideal temperature for efficient soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2710UV-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2710UV-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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