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DMC2053UVTQ-7

Diodes Incorporated

DMC2053UVTQ-7 by Diodes Incorporated

DMC2053UVTQ-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements in separate configuration for switching applications. Features include 20V DS breakdown voltage, 0.035 ohm RDS(on), and 4.6A ID max. Operating from -55 to 150°C, it's AEC-Q101 compliant and ideal for automotive electronics.

Median Price

$0.365

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,950 parts In-Stock

1+ parts

$0.820

100+ parts

$0.330

1k+ parts

$0.226

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8,950

$0.820

$0.330

$0.226

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Mouser Electronics

USA . 777 parts In-Stock

1+ parts

$0.900

100+ parts

$0.385

1k+ parts

$0.276

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777

$0.900

$0.385

$0.276

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Future Electronics

Canada . 249,000 parts In-Stock

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$0.365

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$0.365

Arrow

USA . 9,000 parts In-Stock

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$0.133

9,000

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$0.133

Verical

USA . 9,000 parts In-Stock

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$0.133

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$0.133

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NAC Semi

USA . 213,000 parts In-Stock

1+ parts

-

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$0.740

213,000

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$0.740

J2 Sourcing AB

Sweden . 200 parts In-Stock

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200

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,186 parts In-Stock

1+ parts

$0.113

100+ parts

-

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5,186

$0.113

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Corohmni

South Africa . 433 parts In-Stock

1+ parts

$1.139

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433

$1.139

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Perfect Parts

USA . 4,558 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.180

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3,000

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$0.180

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Argo Parts USA

USA . 2,941 parts In-Stock

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2,941

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Continental Prestige Electronics

USA . 525 parts In-Stock

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525

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Overview

Unleash the power of cutting-edge technology with the DMC2053UVTQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality in their Small Signal Field Effect Transistors (FET). Ideal for switching applications, this product features N-CHANNEL and P-CHANNEL configurations in a compact, easy-to-mount package. With its high performance and reliability, the DMC2053UVTQ-7 offers customers unmatched value and benefits, making it a must-have for any project requiring enhanced mode transistors. Elevate your designs with Diodes Incorporated and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and electrical insulation, making it a reliable choice for various applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile circuit design options and can be used in a wide range of applications.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, offering fast response times and efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer ease of control and high input impedance, making them suitable for many applications.

Maximum Drain Current (ID): 4.6 A

Capable of handling high current loads, making it suitable for power applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2053UVTQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.6 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

32 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2053UVTQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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