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DMC2053UVTQ-13

Diodes Incorporated

DMC2053UVTQ-13 by Diodes Incorporated

DMC2053UVTQ-13 by Diodes Inc. is a Small Signal FET with N/P-Channel, 2 elements, built-in diode for switching applications. Features include 20V DS breakdown voltage, 4.6A max drain current, and 0.035 ohm max on-resistance. Ideal for enhancement mode operation in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,014 parts In-Stock

1+ parts

$0.820

100+ parts

$0.330

1k+ parts

$0.226

10k+ parts

$0.182

2,014

$0.820

$0.330

$0.226

$0.182

Verical

USA . 180,000 parts In-Stock

1+ parts

-

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$0.139

180,000

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$0.139

Distributors (In-Stock)

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NAC Semi

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

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$0.258

40,000

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$0.258

Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 66,218 parts In-Stock

1+ parts

$0.118

100+ parts

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66,218

$0.118

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Corohmni

South Africa . 238 parts In-Stock

1+ parts

$0.333

100+ parts

-

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238

$0.333

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Argo Parts USA

USA . 4,349 parts In-Stock

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4,349

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Continental Prestige Electronics

USA . 2,506 parts In-Stock

1+ parts

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2,506

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the unparalleled quality and reliability of the DMC2053UVTQ-13 by Diodes Incorporated, a leading manufacturer in the industry. As a Small Signal Field Effect Transistor (FET) with N-CHANNEL AND P-CHANNEL polarity, this product offers exceptional performance in switching applications. With its compact design, high power dissipation, and wide operating temperature range, this transistor is perfect for a variety of electronic projects. Trust Diodes Incorporated to deliver superior products that provide unmatched value and efficiency for all your application needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options allows for flexibility in circuit design and compatibility with different configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and are easier to interface with digital circuitry, enhancing overall system performance.

Maximum Power Dissipation (Abs): 1.1 W

With a high power dissipation rating, this transistor can handle significant power loads without overheating, ensuring long-term reliability.

Maximum Drain Current (ID): 4.6 A

Capable of handling high drain currents, making it suitable for applications that require higher power levels.

Maximum Drain-Source On Resistance: 0.035 ohm

Low on-resistance minimizes power losses and improves efficiency in the circuit, making it an ideal choice for high-performance applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate reliably in a wide range of temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC2053UVTQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.6 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

32 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2053UVTQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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