Loading...

BCX5316QTA

Diodes Incorporated

BCX5316QTA by Diodes Incorporated

BCX5316QTA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 25, and can handle up to 1A collector current. With a package style of small outline, it operates b/w -55°C to 150°C and is surface mountable for compact designs.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,666 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.117

10k+ parts

-

1,666

$0.450

$0.175

$0.117

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.083

10k+ parts

-

1,000

-

-

$0.083

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.112

10k+ parts

$0.063

1,000

-

-

$0.112

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.098

-

-

-

IBS Electronics

USA . 1,340,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.121

10k+ parts

$0.110

1,340,000

-

-

$0.121

$0.110

NAC Semi

USA . 1,072,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

1,072,000

-

-

-

$0.163

Vyrian

USA . 12,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,767

-

-

-

-

VNN

France . 4,588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,588

-

-

-

-

Bristol Electronics

USA . 2,218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,218

-

-

-

-

Sensible Micro Corp

USA . 910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

910

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 871 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

-

871

$0.095

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.098

100+ parts

$0.096

1k+ parts

-

10k+ parts

-

2,000

$0.098

$0.096

-

-

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 6,494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,494

-

-

-

-

Perfect Parts

USA . 4,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,480

-

-

-

-

CPlus Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Speed Components Ltd (Excess)

Israel . 593 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

593

-

-

-

-

Overview

Unleash the power of innovation with the BCX5316QTA by Diodes Incorporated. As a leader in manufacturing quality Power Bipolar Junction Transistors (BJT), Diodes Incorporated delivers exceptional products that exceed industry standards. Ideal for switching applications, this PNP transistor offers a low VCEsat of 0.5V and a maximum collector-emitter voltage of 80V, ensuring top-notch performance. With a small outline package style and maximum power dissipation of 2W, this transistor is perfect for a wide range of electronic applications. Trust Diodes Incorporated to provide reliable, high-quality components that bring value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits that require PNP transistors, offering versatility in design.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact mounting on PCBs, saving space and making assembly more streamlined.

Maximum VCEsat: 0.5 V

Low VCEsat ensures minimal power loss and high efficiency in switching operations, contributing to overall energy efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy integration into various circuits and applications.

Terminal Form: FLAT

Flat terminals ensure secure and reliable connections, improving overall performance and longevity of the product.

No. of Terminals: 3

Having 3 terminals provides necessary connections for the transistor to function effectively, allowing for proper integration into circuits.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capacity enables the transistor to handle demanding applications without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact designs and applications with limited space.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain of 25 provides sufficient amplification for various circuit applications, ensuring proper signal processing.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the transistor to withstand elevated temperatures, ensuring stable performance in demanding environments.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making it suitable for fast switching applications.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating provides a wide operating range for various applications, ensuring versatility and reliability.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature enables the transistor to operate in cold environments, making it suitable for applications with extreme temperature conditions.

Maximum Collector Current (IC): 1 A

High collector current rating allows the transistor to handle higher current loads, offering flexibility in various circuit designs.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and electrical conductivity, ensuring reliable connections and long-term performance.

Terminal Position: SINGLE

Single terminal position simplifies circuit integration and reduces the chances of errors during assembly, ensuring consistent performance.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and improves heat dissipation, ensuring efficient operation and longevity of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time of 30 seconds reduces the risk of thermal damage during soldering, ensuring the integrity of the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for reliable soldering processes and ensures the durability of the transistor during assembly.

Reference Standard: AEC-Q101; IATF 16949

Compliance with AEC-Q101 and IATF 16949 standards ensures high quality and reliability, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency enables fast switching speeds, making it suitable for high-speed digital and analog applications that require quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5316QTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101; IATF 16949

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5316QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20