Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSO119N03S
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; JESD-30 Code: R-PDSO-G8; Package Shape: RECTANGULAR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE
30 V
9 A
.0119 ohm
METAL-OXIDE SEMICONDUCTOR
93 pF
MS-012AA
R-PDSO-G8
e3
3
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
1.56 W
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
BSO150N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JEDEC-95 Code: MS-012AA;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
7.6 A
.015 ohm
100 pF
2
1.4 W
BSO200N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; JESD-609 Code: e3;
7 A
.02 ohm
46 pF
BSO300N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Moisture Sensitivity Level (MSL): 3; JEDEC-95 Code: MS-012AA;
5.7 A
.03 ohm
34 pF
SPN02N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 600 V;
600 V
.4 A
2.5 ohm
R-PDSO-G4
4
-55 Cel
1.8 W
BSO052N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
14 A
.0052 ohm
280 pF
2.5 W
BSO104N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Maximum Drain Current (ID): 10 A; Operating Mode: ENHANCEMENT MODE;
10 A
.0097 ohm
110 pF
BSO350N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .035 ohm; JESD-30 Code: R-PDSO-G8;
5 A
.035 ohm
28 pF
BSS225
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOGIC LEVEL COMPATIBLE
DRAIN
.09 A
45 ohm
4.4 pF
R-PSSO-F3
TIN
FLAT
SINGLE
30
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
60 V
.17 A
8 ohm
3 pF
R-PDSO-G3
P-CHANNEL
.36 W
Other Transistors
40
IPB80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
AVALANCHE RATED
55 V
80 A
.0065 ohm
TO-263AB
R-PSSO-G2
175 Cel
245
135 W
IPI80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Minimum DS Breakdown Voltage: 55 V; Package Style (Meter): IN-LINE;
.0068 ohm
TO-262AA
R-PSIP-T3
IN-LINE
NO
THROUGH-HOLE
IPP80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0068 ohm;
TO-220AB
R-PSFM-T3
FLANGE MOUNT
BSS192PE6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
250 V
.19 A
12 ohm
8 pF
255
1 W
AEC-Q101
BSS127E6327
Infineon's BSS127E6327 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 600 ohm max on resistance. Ideal for small signal applications, it features a built-in diode and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C operating temperature.
.021 A
600 ohm
1.5 pF
.5 W
BSS139E6906
Infineon's BSS139E6906 is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30 ohm RDS(on). Ideal for small signal applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in DEPLETION MODE, this transistor has a max temp of 150°C and 3.3pF Crss.
.1 A
30 ohm
3.3 pF
DEPLETION MODE
NOT SPECIFIED
BSS138NE6327
BSS138NE6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for small outline applications, it operates in enhancement mode with 3.5 ohm RDS(on) and 3.8pF Crss, meeting MIL-STD-883 standards at -55 to 150°C temperature range.
.23 A
3.5 ohm
3.8 pF
MIL-STD-883
Matte Tin (Sn)
BSS138NE6433
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
BSS126E6327
BSS126E6327 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. It is used in small signal applications requiring depletion mode operation, such as power management circuits due to its 0.5W power dissipation and compact gull wing package design.
500 ohm
BSS126E6906
BSS126E6906 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. Ideal for applications requiring small outline packages, such as power supplies and motor control systems.
BSS159NE6327
BSS159NE6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in electronics due to its DEPLETION MODE operation and compact SMALL OUTLINE package style.
5.9 pF
BSS159NE6906
Infineon's BSS159NE6906 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A max drain current, and 3.5 ohm max on resistance. Ideal for small signal applications requiring low power dissipation in surface mount configurations.
BSS138WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .28 A;
.28 A
4.2 pF
BSS138WL6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (Abs) (ID): .28 A;
SN7002NE6327
Infineon's SN7002NE6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS. Ideal for small signal applications, it features a built-in diode in a GULL WING package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, this MOSFET offers low feedback capacitance of 4.2pF.
.2 A
5 ohm
SN7002NL6327
Infineon's SN7002NL6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(ON). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.36W. The transistor features a built-in diode and can withstand temperatures up to 150°C.
SN7002WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 4.5 pF; Peak Reflow Temperature (C): 260;
4.5 pF
SN7002WL6433
Infineon's SN7002WL6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.5W.
2N7002L6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
.3 A
3 ohm
BSS126L6327HTSA1
Infineon's BSS126L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A ID, and 500 ohm RDS(on). Ideal for small outline applications requiring a single configuration with built-in diode. Suitable for automotive use due to AEC-Q101 standard compliance.
BSS131L6327HTSA1
Infineon's BSS131L6327HTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage. Operating in Enhancement Mode, it has 0.11A ID and 14 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 150 °C operating range.
240 V
.11 A
14 ohm
BSS139L6327HTSA1
Infineon's BSS139L6327HTSA1 is a N-CHANNEL FET with 250V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it features 0.1A ID and 30 ohm RDS(on). Widely used in automotive applications due to AEC-Q101 standard compliance.
BSS159NL6327HTSA1
Infineon's BSS159NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 3.5Ω RDS(ON). Ideal for small outline applications in automotive electronics due to AEC-Q101 standard compliance and low feedback capacitance of 5pF.
5 pF
BSS169L6327HTSA1
Infineon BSS169L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6Ω RDS(on). Ideal for depletion mode operation in small outline packages. Suitable for applications requiring low feedback capacitance and built-in diode configuration.
100 V
6 ohm
7 pF
BSS192PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
BSS205NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .05 ohm; Package Body Material: PLASTIC/EPOXY;
20 V
2.5 A
.05 ohm
24 pF
BSS214NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
1.5 A
.14 ohm
BSS215PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .15 ohm; Operating Mode: ENHANCEMENT MODE;
.15 ohm
128 pF
BSS225L6327HTSA1
Infineon's BSS225L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.09A ID, and 45 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode in a small outline package.
BSS306NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 17 pF; Package Shape: RECTANGULAR;
2.3 A
.057 ohm
17 pF
BSS308PEL6327HTSA1
Infineon BSS308PEL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 2A ID, and 0.08 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include SINGLE configuration with built-in diode, GULL WING terminals, and ENHANCEMENT MODE operation.
2 A
.08 ohm
18 pF
BSS315PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 84 pF; No. of Elements: 1; Terminal Position: DUAL;
84 pF
BSS7728NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS83PL6327HTSA1
Infineon's BSS83PL6327HTSA1 is a P-CHANNEL FET with 60V DS breakdown voltage, 0.33A ID, and 2 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode and GULL WING terminals.
.33 A
2 ohm
9 pF
BSP171PE6327
Infineon's BSP171PE6327 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.9A max drain current. Ideal for automotive applications due to AEC-Q101 standard, it features a built-in diode, 0.3 ohm RDS(on), and 55pF Crss capacitance.
1.9 A
.3 ohm
55 pF
BSO080P03SNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE;
12.6 A
.008 ohm
1500 pF
BSO130N03MSGXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY;
7.8 A
.013 ohm
BSO200P03SNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; No. of Elements: 1;
7.4 A
580 pF
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