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Infineon Technologies Small Signal Field Effect Transistors (FET) 127

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSO220N03MSGXUMA1 by Infineon Technologies

BSO220N03MSGXUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .022 ohm; JESD-30 Code: R-PDSO-G8;

SINGLE WITH BUILT-IN DIODE

30 V

6.1 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BSS127L6327HTSA1 by Infineon Technologies

BSS127L6327HTSA1

Infineon Technologies

Infineon's BSS127L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 0.021A ID, and 600 ohm RDS(on). The transistor's GULL WING terminals and small outline package make it suitable for surface mount designs.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

600 V

.021 A

600 ohm

METAL-OXIDE SEMICONDUCTOR

1.5 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

BSS138NL6327HTSA1 by Infineon Technologies

BSS138NL6327HTSA1

Infineon Technologies

Infineon's BSS138NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With 3.5 ohm Drain-Source On Resistance and 3.8 pF Feedback Capacitance, it meets AEC-Q101 standards for automotive use at temperatures ranging from -55 to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

.36 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

BSS192PH6327XTSA1 by Infineon Technologies

BSS192PH6327XTSA1

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

250 V

.19 A

12 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PSSO-F3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1 W

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

SILICON

BSS225H6327XTSA1 by Infineon Technologies

BSS225H6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.09 A

45 ohm

METAL-OXIDE SEMICONDUCTOR

4.4 pF

R-PSSO-F3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BSS87H6327XTSA1 by Infineon Technologies

BSS87H6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-F3; Terminal Finish: TIN; JESD-609 Code: e3;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

240 V

.29 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

7.3 pF

R-PSSO-F3

e3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

BSL306NH6327XTSA1 by Infineon Technologies

BSL306NH6327XTSA1

Infineon Technologies

Infineon BSL306NH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, 0.057 ohm RDS(on), and 2.3A ID. Ideal for automotive applications due to AEC-Q101 standard compliance, it features separate elements with built-in diode in a small outline package. Operating from -55°C to 150°C, it offers high power dissipation and low feedback capacitance for efficient performance.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.3 A

.057 ohm

METAL-OXIDE SEMICONDUCTOR

17 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.5 W

.5 W

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

IPC302N08N3X1SA1 by Infineon Technologies

IPC302N08N3X1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 80 V; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

SINGLE WITH BUILT-IN DIODE

80 V

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

NOT SPECIFIED

SILICON

BSL205NH6327XTSA1 by Infineon Technologies

BSL205NH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 20 V;

AVALANCHE RATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSL207NH6327XTSA1 by Infineon Technologies

BSL207NH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Package Shape: RECTANGULAR; Terminal Position: DUAL;

AVALANCHE RATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.1 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSL314PEH6327XTSA1 by Infineon Technologies

BSL314PEH6327XTSA1

Infineon Technologies

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

1.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSL802SNH6327XTSA1 by Infineon Technologies

BSL802SNH6327XTSA1

Infineon Technologies

BSL802SNH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.5A ID, and 0.022 ohm RDS(on). It is used in applications requiring high drain current capability and low on-resistance, such as automotive electronics due to AEC-Q101 standard compliance.

AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

20 V

7.5 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSS119NH6433XTMA1 by Infineon Technologies

BSS119NH6433XTMA1

Infineon Technologies

Infineon's BSS119NH6433XTMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55 to 150 °C operating range.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

3.1 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.5 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

BSZ0907NDXTMA2 by Infineon Technologies

BSZ0907NDXTMA2

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-PDSO-N8; Maximum Drain Current (ID): 8.5 A; Additional Features: AVALANCHE RATED;

AVALANCHE RATED

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

8.5 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

YES

NO LEAD

DUAL

SILICON

SN7002WH6433XTMA1 by Infineon Technologies

SN7002WH6433XTMA1

Infineon Technologies

Infineon's SN7002WH6433XTMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(ON). Ideal for small outline applications in automotive electronics due to AEC-Q101 compliance.

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

4.5 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

BSS119L6433HTMA1 by Infineon Technologies

BSS119L6433HTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

YES

GULL WING

DUAL

SILICON

BSS123L6433HTMA1 by Infineon Technologies

BSS123L6433HTMA1

Infineon Technologies

Infineon's BSS123L6433HTMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.17A ID, and 6ohm RDS. Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for circuits needing low feedback capacitance of 6.3pF and built-in diode configuration.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

6.3 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

SILICON

BSS159NH6327XTSA1 by Infineon Technologies

BSS159NH6327XTSA1

Infineon Technologies

Infineon's BSS159NH6327XTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. Ideal for DEPLETION MODE operation, it features 3.5Ω RDS(on) and 5.9pF Crss, making it suitable for small signal applications in electronics. The PLASTIC/EPOXY package with GULL WING terminals offers easy surface mount installation.

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

5.9 pF

R-PDSO-G3

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

SILICON

BSS169L6906HTSA1 by Infineon Technologies

BSS169L6906HTSA1

Infineon Technologies

Infineon's BSS169L6906HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for depletion mode applications, it features a built-in diode and operates at up to 150°C. Suitable for surface mount designs in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

R-PDSO-G3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

SILICON

BSL373SNH6327XTSA1 by Infineon Technologies

BSL373SNH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

100 V

2 A

.23 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSL214NH6327XTSA1 by Infineon Technologies

BSL214NH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 2; Moisture Sensitivity Level (MSL): 1;

AVALANCHE RATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

BSL806NH6327XTSA1 by Infineon Technologies

BSL806NH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 28.6 pF;

AVALANCHE RATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.3 A

.057 ohm

METAL-OXIDE SEMICONDUCTOR

28.6 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

IPC218N04N3X7SA1 by Infineon Technologies

IPC218N04N3X7SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-XXUC-N; Terminal Position: UNSPECIFIED; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

40 V

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

NOT SPECIFIED

SILICON

IPC26N12NX1SA1 by Infineon Technologies

IPC26N12NX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

120 V

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

NOT SPECIFIED

SILICON

IPC302N15N3X1SA1 by Infineon Technologies

IPC302N15N3X1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE WITH BUILT-IN DIODE

150 V

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

NOT SPECIFIED

SILICON

IPC302N20NFDX1SA1 by Infineon Technologies

IPC302N20NFDX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .1 ohm; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE WITH BUILT-IN DIODE

200 V

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

NOT SPECIFIED

SILICON

IPN70R2K1CEATMA1 by Infineon Technologies

IPN70R2K1CEATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; Terminal Finish: TIN;

DRAIN

SINGLE WITH BUILT-IN DIODE

700 V

2.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

BSS138NE7854 by Infineon Technologies

BSS138NE7854

Infineon Technologies

BSS138NE7854 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. It is used in small outline packages for applications requiring low power dissipation, such as MIL-STD-883 compliant circuits.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.36 W

.36 W

MIL-STD-883

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

BSS159NL6906HTSA1 by Infineon Technologies

BSS159NL6906HTSA1

Infineon Technologies

Infineon's BSS159NL6906HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. Ideal for DEPLETION MODE operation, it features 3.5 ohm RDS(on) and 5pF Crss. Widely used in automotive applications due to AEC-Q101 compliance.

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

IPC302N08N3X2SA1 by Infineon Technologies

IPC302N08N3X2SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD; JESD-30 Code: R-XXUC-N;

SINGLE WITH BUILT-IN DIODE

80 V

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-N

1

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UNSPECIFIED

SILICON

BSS123IXTMA1 by Infineon Technologies

BSS123IXTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

100 V

.19 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

1.6 pF

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.5 W

YES

GULL WING

DUAL

SILICON