Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMP210DUFB4-7B
Diodes Incorporated
DMP210DUFB4-7B by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.2A Drain Current, and 5.5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it's a surface mount chip carrier with Ni/Pd/Au finish, operating up to 150°C.
HIGH RELIABILITY, LOW THRESHOLD
DRAIN
SINGLE WITH BUILT-IN DIODE
20 V
.2 A
.14 A
5.5 ohm
METAL-OXIDE SEMICONDUCTOR
20 pF
R-PBCC-N3
e4
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
CHIP CARRIER
260
P-CHANNEL
.35 W
Other Transistors
YES
Nickel/Palladium/Gold (Ni/Pd/Au)
NO LEAD
BOTTOM
30
SWITCHING
SILICON
DMN26D0UFB4-7B
DMN26D0UFB4-7B by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current, ideal for switching applications. It operates in enhancement mode with 3ohm RDS(on) and can handle up to 0.35W power dissipation. Package style is chip carrier, suitable for surface mount assembly at max temp of 150°C.
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
.24 A
3 ohm
N-CHANNEL
FET General Purpose Power
NICKEL PALLADIUM GOLD
FDV302PD87Z
Fairchild Semiconductor
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
LOGIC LEVEL COMPATIBLE
25 V
.12 A
10 ohm
R-PDSO-G3
SMALL OUTLINE
Not Qualified
GULL WING
DUAL
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
.46 A
1.1 ohm
e3
MATTE TIN
DMN26D0UFB4-7
DMN26D0UFB4-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. This chip carrier package features a silicon transistor element and can withstand temperatures up to 150°C.
.23 A
AEC-Q101
DMN5L06K-7
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
SINGLE
50 V
.3 A
5 pF
-65 Cel
MIL-STD-202
NTJD3158CT1G
Onsemi
NTJD3158CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has a max drain current of 0.82A and on-resistance of 0.375 ohm. Operating at up to 150 °C, it features a peak reflow temp of 260°C and feedback capacitance of 5pF.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.82 A
.63 A
.375 ohm
R-PDSO-G6
2
6
N-CHANNEL AND P-CHANNEL
TIN
BS108,126
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CYLINDRICAL;
200 V
.25 A
5 ohm
15 pF
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BS170G
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
60 V
.5 A
TO-226AA
e1
Tin/Silver/Copper (Sn/Ag/Cu)
40
2N7000RLRAG
2N7000RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in Enhancement Mode applications, featuring a built-in diode and 5ohm Drain-Source Resistance for efficient performance.
2N7000RLRMG
2N7000RLRMG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for applications requiring Enhancement Mode operation, it features a built-in diode and 5ohm On Resistance. Package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
2N7000RLRPG
2N7000RLRPG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in applications requiring Enhancement Mode operation, such as low-power switching circuits. With a max power dissipation of 0.35W and operating temperature up to 150 °C, it offers reliable performance in various electronic designs.
TN0200K-T1-E3
Vishay Intertechnology
Vishay Intertechnology TN0200K-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.73A Drain Current, and 0.5 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with Matte Tin finish.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.73 A
.5 ohm
TO-236
Matte Tin (Sn)
NTJD4152PT1
NTJD4152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.88A max drain current, and 0.26 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150 °C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.88 A
.26 ohm
e0
235
TIN LEAD
2N5460G
2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.
JUNCTION
2 pF
DEPLETION MODE
135 Cel
FET General Purpose Small Signal
AMPLIFIER
BS107AG
BS107AG by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.25A Drain Current, and 6.4 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Package style is CYLINDRICAL with THROUGH-HOLE terminals.
6.4 ohm
BS107ARL1G
BS107ARL1G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage. It's used for SWITCHING applications, operating in ENHANCEMENT MODE with 0.25A Drain Current. The transistor has a Max Power Dissipation of 0.35W and Max Operating Temperature of 150°C.
BS170RLRAG
BS170RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
TP0202K-T1-E3
Vishay Intertechnology's TP0202K-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.385A Drain Current, and 1.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals and ENHANCEMENT MODE operation up to 150°C.
30 V
.385 A
1.4 ohm
TO-236AB
BS108ZL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
8 ohm
10 pF
TIN SILVER COPPER
BS170RL1G
BS170RL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
EUROPEAN PART NUMBER
BS170RLRMG
BS170RLRMG by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
BS170ZL1G
BS170ZL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
BSR58LT1G
BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.
60 ohm
CHOPPER
J111RL1G
J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.
30 ohm
J111RLRAG
J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.
J111RLRPG
J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.
VN2410LZL1G
VN2410LZL1G by Onsemi is a N-CHANNEL FET with 240V DS breakdown voltage, 0.2A drain current, and 10 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
240 V
DMN5L06-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.28 A
DMN32D4SDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 30 V;
.65 A
1 ohm
6.8 pF
-55 Cel
BSS138A-TP-HF
Micro Commercial Components
BSS138A-TP-HF by Micro Commercial Components is a N-channel FET with 50V DS breakdown voltage, 0.22A max drain current, and 1.6 ohm max on resistance. Ideal for small signal applications in enhancement mode operation, featuring a built-in diode and operating temperature range of -55 to 150°C.
.22 A
1.6 ohm
10
FDV303N-F169
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
.68 A
.45 ohm
FDV304P-F169
Onsemi's FDV304P-F169 is a P-CHANNEL FET for switching applications. It features a 25V DS breakdown voltage, 0.46A max drain current, and 1.1 ohm max on resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode at -55 to 150 °C temperature range.
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