Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO7800
Alpha & Omega Semiconductor
AO7800 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It operates in ENHANCEMENT MODE, has 20V DS Breakdown Voltage, 0.3W Power Dissipation, and 0.9A Drain Current. With GULL WING terminals, it's a small outline package suitable for surface mount technology.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
.9 A
.3 ohm
METAL-OXIDE SEMICONDUCTOR
14 pF
R-PDSO-G6
2
6
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
.3 W
YES
GULL WING
DUAL
SWITCHING
SILICON
BSS84PWL6327
Infineon Technologies
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE
60 V
.15 A
8 ohm
3.8 pF
R-PDSO-G3
e3
1
3
260
P-CHANNEL
Not Qualified
Other Transistors
Matte Tin (Sn)
40
2V7002LT3G
Onsemi
2V7002LT3G by Onsemi is a N-CHANNEL FET with a min DS Breakdown Voltage of 60V, ideal for SWITCHING applications. It features a Max Drain Current of 0.115A and Max Power Dissipation of 0.3W. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE and has a max operating temperature of 150°C.
.115 A
7.5 ohm
5 pF
TO-236
AEC-Q101
FET General Purpose Power
MATTE TIN
30
BSS84DWQ-7
Diodes Incorporated
BSS84DWQ-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max 150°C. With 0.13A drain current and 10Ω on resistance, it offers reliable performance in various electronic circuits.
HIGH RELIABILITY
50 V
.13 A
10 ohm
12 pF
NDS7002A/D87Z
National Semiconductor
NDS7002A/D87Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in PLASTIC/EPOXY package style.
.28 A
2 ohm
TO-236AB
-65 Cel
FDG6322CD87Z
Fairchild Semiconductor
FDG6322CD87Z by Fairchild Semiconductor is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.41A, it operates in enhancement mode at up to 150°C temperature.
LOGIC LEVEL COMPATIBLE
25 V
.41 A
.22 A
4 ohm
N-CHANNEL AND P-CHANNEL
FDG6301ND87Z
FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.
FDG6303ND87Z
FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
.5 A
.45 ohm
LMN200B01-7
LMN200B01-7 by Diodes Inc. is a small signal N-channel FET with built-in bipolar transistor and resistor, used for switching applications. It has a max VCEsat of 0.3V, min DS breakdown voltage of 60V, and max operating temperature of 150°C.
BUILT IN BIAS RESISTOR
.2 A
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
60
.3 V
LMN400B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .4 A; JESD-30 Code: R-PDSO-G6;
.4 A
70
2N7002ET3G
2N7002ET3G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with built-in diode, GULL WING terminals, and 150°C max temp.
.26 A
2.5 ohm
TIN
2N7002KT3G
2N7002KT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.32A Drain Current and 1.6ohm On Resistance. Operating at 150 °C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
.32 A
1.6 ohm
2N4117A-E3
Vishay Intertechnology
Vishay Intertechnology's 2N4117A-E3 is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.3W and feedback capacitance of 1.5pF, making it ideal for AMPLIFIER applications. The transistor features a METAL package body, ROUND shape, and WIRE terminals for efficient performance up to 175°C.
LOW NOISE
SINGLE
JUNCTION
1.5 pF
TO-206AF
O-MBCY-W4
4
DEPLETION MODE
175 Cel
METAL
ROUND
CYLINDRICAL
NO
WIRE
BOTTOM
AMPLIFIER
BFR30,215
NXP Semiconductors
NXP Semiconductors' BFR30,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in small outline packages.
.01 A
BFR31,215
NXP Semiconductors' BFR31,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temp up to 150°C, it's designed for small outline packages.
IEC-134
BSR56,215
NXP Semiconductors' BSR56,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 0.3W Power Dissipation, it operates in DEPLETION MODE. Featuring GULL WING terminals and SILICON element material, it offers reliable performance up to 150°C.
40 V
.02 A
25 ohm
PMBFJ111,215
PMBFJ111,215 by NXP Semiconductors is a small signal N-channel FET with a min DS breakdown voltage of 40V. It is used for switching applications and operates in depletion mode. With a max power dissipation of 0.3W and a max operating temperature of 150°C, it offers reliable performance in various electronic devices.
30 ohm
PMBFJ112,215
The NXP Semiconductors PMBFJ112,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 50 ohm max drain-source resistance. With a power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for depletion mode operation in various electronic circuits.
50 ohm
PMBFJ113,215
The NXP Semiconductors PMBFJ113,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 0.3W power dissipation in a PLASTIC/EPOXY package with GULL WING terminals. Operating in DEPLETION MODE, it has a max temperature of 150°C and an on-resistance of 100 ohm, making it suitable for various electronic circuits.
100 ohm
PMBFJ174,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; JESD-609 Code: e3;
30 V
85 ohm
FET General Purpose Small Signal
PMBFJ175,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE;
125 ohm
PMBFJ176,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: TIN;
250 ohm
PMBFJ177,215
PMBFJ177,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in depletion mode. This surface mount transistor has a max power dissipation of 0.3W and can withstand temperatures up to 150°C.
300 ohm
BSS84PW
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Terminal Form: GULL WING;
BSS123-7
Diodes Inc. BSS123-7 is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6ohm on-resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with Gull Wing terminals.
100 V
.17 A
6 ohm
6 pF
e0
TIN LEAD
BSS84-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain-Source On Resistance: 10 ohm; Maximum Drain Current (ID): .13 A;
2N7002-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .115 A;
BS870-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
.25 A
5 ohm
BSS84DW-7
BSS84DW-7 by Diodes Incorporated is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and 10 ohm on-resistance. Operating in enhancement mode at up to 150°C, this MOSFET has dual terminals and built-in diode elements.
MMBF170-7
Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
BFR30LT1G
BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.
Tin (Sn)
BFR31LT1G
BFR31LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.3W. This SMALL OUTLINE transistor has a peak reflow temperature of 260°C and feedback capacitance of 1.5pF.
NTA4153NT1
NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.915 A
.23 ohm
235
NTA7002NT1
NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
.154 A
FDG6332C_F085
FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
.7 A
FDG6301N-F085
FDG6301N-F085 by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.22A, operating at an enhancement mode with a breakdown voltage of 25V. With a small outline package style and peak reflow temperature of 260°C, it offers efficient performance in various electronic devices.
NSVJ5908DSG5T1G
NSVJ5908DSG5T1G by Onsemi is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Operating in depletion mode, it has a max power dissipation of 0.3W and can handle a max drain current of 0.05A. This small outline transistor has a temp range of -55 to 150°C and is AEC-Q101 compliant.
COMMON SOURCE, 2 ELEMENTS
.05 A
R-PDSO-F5
e6
5
TIN BISMUTH
FLAT
NDS7002A-F169
NDS7002A-F169 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 60V min DS breakdown voltage, 0.3W max power dissipation, and 150°C max operating temperature. With a built-in diode and Gull Wing terminals, it offers efficient enhancement mode operation in a compact package.
FDG6332C-F085P
Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.
BSS84WT106
ROHM
ROHM BSS84WT106 is a P-CHANNEL FET with 60V DS breakdown voltage and 0.21A ID. Ideal for switching applications, it features a built-in diode, 6.4 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, it has a max power dissipation of 0.3W and can withstand temperatures from -55 to 150°C.
.21 A
6.4 ohm
3 pF
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