Loading...

SINGLE WITH BUILT-IN DIODE AND RESISTOR Small Signal Field Effect Transistors (FET) 22

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
AO4447AL by Alpha & Omega Semiconductor

AO4447AL

Alpha & Omega Semiconductor

AO4447AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, 17A ID, and 0.007 ohm RDS(ON). Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, this MOSFET has a max temp of 150°C and -55°C min temp.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

17 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

564 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

DMP1096UCB4-7 by Diodes Incorporated

DMP1096UCB4-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .82 W; Maximum Drain Current (Abs) (ID): 2.6 A; Maximum Drain-Source On Resistance: .152 ohm;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.6 A

2.4 A

.152 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBGA-B4

e1

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

.82 W

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

6HP04MH-TL-W by Onsemi

6HP04MH-TL-W

Onsemi

6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

60 V

.37 A

4.2 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.6 W

YES

TIN BISMUTH

FLAT

DUAL

30

SILICON

NTK3142PT5G by Onsemi

NTK3142PT5G

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Drain-Source On Resistance: 4 ohm; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 30;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

.215 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e3

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

Not Qualified

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

2N7002WT3G by Onsemi

2N7002WT3G

Onsemi

2N7002WT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.31A Drain Current, and 1.6 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with built-in diode and resistor. Operates in ENHANCEMENT MODE at max temp of 150°C, making it suitable for various electronic devices.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

60 V

.31 A

.31 A

1.6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.33 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTS4001NT1 by Onsemi

NTS4001NT1

Onsemi

NTS4001NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, ideal for switching applications. With a min DS breakdown voltage of 30V, it operates in enhancement mode with max drain current of 0.27A and max power dissipation of 0.33W at 150 °C.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

.27 A

.27 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.33 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

TN0200K-T1-E3 by Vishay Intertechnology

TN0200K-T1-E3

Vishay Intertechnology

Vishay Intertechnology TN0200K-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.73A Drain Current, and 0.5 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with Matte Tin finish.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

.73 A

.73 A

.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.35 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

NUD3048MT1 by Onsemi

NUD3048MT1

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; No. of Elements: 1; Terminal Position: DUAL;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

100 V

1.2 A

1.2 A

.82 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NTJS4151PT1 by Onsemi

NTJS4151PT1

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 235; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

3.3 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NUD3124LT1G by Onsemi

NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE AND RESISTOR

28 V

.15 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SWITCHING

SILICON

NUD3105LT1G by Onsemi

NUD3105LT1G

Onsemi

NUD3105LT1G by Onsemi is a N-CHANNEL FET with 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for switching applications, it features a built-in diode and resistor in a small outline package for surface mount assembly. Operating at up to 150°C, it uses metal-oxide semiconductor technology with matte tin finish.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE AND RESISTOR

6 V

.5 A

1.3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SWITCHING

SILICON

NTJS3151PT2 by Onsemi

NTJS3151PT2

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Maximum Drain-Source On Resistance: .06 ohm; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.7 A

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.625 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NUD3048MT1G by Onsemi

NUD3048MT1G

Onsemi

NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

100 V

1.2 A

1.2 A

.82 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTA4153NT1 by Onsemi

NTA4153NT1

Onsemi

NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

.915 A

.915 A

.23 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTA7002NT1 by Onsemi

NTA7002NT1

Onsemi

NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

.154 A

.154 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NVJS3151PT1G by Onsemi

NVJS3151PT1G

Onsemi

NVJS3151PT1G by Onsemi is a P-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 12V, max drain current of 2.7A, and max operating temp of 150 °C. With a small outline package style and matte tin terminal finish, it offers reliable performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.625 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTNS3C94NZT5G by Onsemi

NTNS3C94NZT5G

Onsemi

NTNS3C94NZT5G by Onsemi is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.384A ID, and 0.48ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 150 °C, featuring PLASTIC/EPOXY package and NO LEAD terminals.

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

.384 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

N-CHANNEL

.12 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

SINGLE

30

SWITCHING

SILICON

DMN3110LCP3-7 by Diodes Incorporated

DMN3110LCP3-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.38 W; Maximum Feedback Capacitance (Crss): 10 pF; Minimum DS Breakdown Voltage: 30 V;

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

3.2 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

R-PBCC-N3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

1.38 W

YES

MATTE TIN

NO LEAD

BOTTOM

30

SWITCHING

SILICON

5HN01SS-TL-E by Onsemi

5HN01SS-TL-E

Onsemi

5HN01SS-TL-E by Onsemi is a N-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It has a 50V DS breakdown voltage, 0.1A max drain current, and 7.5 ohm max on resistance. This small outline transistor operates in enhancement mode and features a max power dissipation of 0.15W.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

50 V

.1 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

.15 W

YES

TIN BISMUTH

FLAT

DUAL

SWITCHING

SILICON

DMP1008UCB9-7 by Diodes Incorporated

DMP1008UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.53 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e1;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

8 V

13.2 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBGA-B9

e1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.53 W

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON

NTNS5K0P021ZTCG by Onsemi

NTNS5K0P021ZTCG

Onsemi

NTNS5K0P021ZTCG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and RESISTOR, operating in ENHANCEMENT MODE. With a max power dissipation of 0.125W and temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

.127 A

5.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

.125 W

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DMP2042UCP4-7 by Diodes Incorporated

DMP2042UCP4-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .86 W; JESD-609 Code: e2; No. of Terminals: 4;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

2.9 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

S-XBCC-N4

e2

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

.86 W

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON