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.05 A RF Small Signal Bipolar Junction Transistors (BJT) 25

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFP640FESDH6327XTSA1 by Infineon Technologies

BFP640FESDH6327XTSA1

Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

IMX5T108 by ROHM

IMX5T108

ROHM

ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.

.05 A

SEPARATE, 2 ELEMENTS

27

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

1400 MHz

2SC4774T106S by ROHM

2SC4774T106S

ROHM

ROHM 2SC4774T106S is an NPN BJT transistor for switching applications in the UHF band. Features include VCEsat of 0.3V, hFE of 270, and fT of 800MHz. With a max operating temp of 150°C, it has a small outline package with gull wing terminals for surface mount assembly.

.05 A

1.7 pF

6 V

SINGLE

270

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

800 MHz

.3 V

EMX5T2R by ROHM

EMX5T2R

ROHM

ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.

.05 A

1.55 pF

11 V

SEPARATE, 2 ELEMENTS

27

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

AMPLIFIER

SILICON

3200 MHz

BFG67,215 by NXP Semiconductors

BFG67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG67/X,215 by NXP Semiconductors

BFG67/X,215

NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

8000 MHz

BFQ67,215 by NXP Semiconductors

BFQ67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFS17W,115 by NXP Semiconductors

BFS17W,115

NXP Semiconductors

NXP Semiconductors' BFS17W,115 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.3 W. It operates in the ultra high frequency band at 1600 MHz, making it ideal for amplifier applications. The transistor has a max. collector-emitter voltage of 15 V and can handle a max. collector current of 0.05 A.

.05 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.

HIGH RELIABILITY

.05 A

12 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

PBR941,215 by NXP Semiconductors

PBR941,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.36 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

PRF947,115 by NXP Semiconductors

PRF947,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.38 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8500 MHz

PRF949,115 by NXP Semiconductors

PRF949,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

MMBTH10-7 by Diodes Incorporated

MMBTH10-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

.05 A

.7 pF

25 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

650 MHz

MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.

.05 A

.7 pF

40 V

SINGLE

30

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

400 MHz

MPS5179G by Onsemi

MPS5179G

Onsemi

MPS5179G by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it ideal for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals, suitable for high-frequency circuit designs.

.05 A

1 pF

12 V

SINGLE

25

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.2 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

900 MHz

MPS5179RLRAG by Onsemi

MPS5179RLRAG

Onsemi

MPS5179RLRAG by Onsemi is a NPN RF BJT with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.

.05 A

1 pF

12 V

SINGLE

25

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.2 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

900 MHz

MPS5179RLRPG by Onsemi

MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

.05 A

1 pF

12 V

SINGLE

25

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.2 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

900 MHz

MPS918G by Onsemi

MPS918G

Onsemi

MPS918G by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.625W and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

.05 A

3 pF

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

600 MHz

2SA1977-T1B-A by Renesas Electronics

2SA1977-T1B-A

Renesas Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.05 A

1 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

8500 MHz

BFP640F-E6327 by Infineon Technologies

BFP640F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

.05 A

SINGLE

110

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

30000 MHz

BFP640FESDE6327 by Infineon Technologies

BFP640FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: X BAND;

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

BFP640H6433 by Infineon Technologies

BFP640H6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;

LOW NOISE, HIGH RELIABILITY

.05 A

.2 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

40000 MHz

BFU520X,215 by NXP Semiconductors

BFU520X,215

NXP Semiconductors

NXP Semiconductors' BFU520X,215 is a NPN RF BJT with 4 terminals and L Band frequency band. It has a max power dissipation of 0.45W, fT of 10500MHz, and hFE of 60. Ideal for amplifier applications in surface mount designs due to its small outline package style and high transition frequency.

COLLECTOR

.05 A

.52 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.45 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

10500 MHz

BFU520VL by NXP Semiconductors

BFU520VL

NXP Semiconductors

NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.

COLLECTOR

.05 A

.52 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

10500 MHz

BFU550VL by NXP Semiconductors

BFU550VL

NXP Semiconductors

The NXP Semiconductors BFU550VL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It has a max collector-emitter voltage of 16V, operating temperature up to 150°C, and transition frequency of 11GHz. This small outline transistor features Gull Wing terminals and can handle a max current of 0.05A.

LOW NOISE

COLLECTOR

.05 A

.72 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

11000 MHz