Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BLL1214-35,112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;
SOURCE
SINGLE
75 V
METAL-OXIDE SEMICONDUCTOR
L BAND
R-CDFM-F2
NOT APPLICABLE
1
2
ENHANCEMENT MODE
200 Cel
CERAMIC, METAL-SEALED COFIRED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
110 W
Not Qualified
FET General Purpose Power
YES
FLAT
DUAL
AMPLIFIER
SILICON
BLF6G38-10,118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
65 V
3.1 A
R-CDFP-F2
FLATPACK
BLF6G22-45,135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
S BAND
225 Cel
BLF6G20LS-75,118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
18 A
BLF6G20-45,135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Highest Frequency Band: L BAND;
13 A
BLF6G10LS-135R,118
RF Power Field-Effect Transistors; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F2; No. of Terminals: 2;
BLC8G24LS-240AVJ
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-PDFP-F8; Terminal Form: FLAT; Maximum Drain-Source On Resistance: .112 ohm;
COMMON SOURCE, 2 ELEMENTS
.112 ohm
R-PDFP-F8
8
PLASTIC/EPOXY
13.3 dB
IEC-60134
MMRF1312GSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 2; JESD-30 Code: R-CDSO-G4;
SEPARATE, 2 ELEMENTS
112 V
2.5 pF
R-CDSO-G4
4
-40 Cel
SMALL OUTLINE
260
18.5 dB
GULL WING
40
MMRF1312HR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4;
R-CDFM-F4
MMRF1312HSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Package Style (Meter): FLATPACK;
R-CDFP-F4
MMRF1314GSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Minimum Power Gain (Gp): 16 dB; Terminal Position: DUAL;
105 V
2.98 pF
16 dB
MMRF1314HR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 105 V; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MMRF1314HSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4;
MMRF1317HR5
The NXP Semiconductors MMRF1317HR5 is an RF Power FET with 105V DS breakdown voltage and 17.4dB power gain, ideal for amplifier applications in the L Band. It features a ceramic-metal-sealed cofired package, N-channel polarity, and operates in enhancement mode with a max temperature of 225°C.
2.43 pF
-55 Cel
17.4 dB
MMRF1317HSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; Package Shape: RECTANGULAR;
AFV141KHR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
A2G22S251-01SR3
NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
150 V
DEPLETION MODE
16.2 dB
GALLIUM NITRIDE
MHT1008NT1
NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
R-PDSO-F2
e3
3
150 Cel
TIN
A2T08VD020NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Finish: TIN; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
ULTRA HIGH FREQUENCY BAND
S-PBCC-N24
24
SQUARE
CHIP CARRIER
18 dB
NO LEAD
BOTTOM
AFV141KGSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 105 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
R-CDFM-G4
AFV141KHSR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 16 dB; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MMRF1024HSR5
NXP Semiconductors' MMRF1024HSR5 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 13dB Power Gain. Ideal for S BAND applications, it features METAL-OXIDE SEMICONDUCTOR tech, operates in ENHANCEMENT MODE, and has a temp range of -40 to 225 °C.
R-CQFP-F6
6
13 dB
QUAD
MMRF1008GHR5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
110 V
.46 pF
R-CDFM-G2
19 dB
A2T20H160W04NR3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
COMPLEX
R-PDFP-F4
A2G26H281-04SR3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
12.9 dB
MRF6V12500GSR5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; No. of Terminals: 2;
R-PDSO-G2
AFV10700HR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Package Style (Meter): FLANGE MOUNT;
1.16 pF
AFV10700HSR5
AFV10700HSR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 105V and a Min Power Gain of 18dB. Commonly used in amplifiers, it operates in the L BAND frequency range. This CERAMIC, METAL-SEALED COFIRED transistor has a max operating temperature of 225°C and can handle peak reflow temperatures up to 260°C.
AFV10700GSR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: GULL WING; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T14H450-23NR6
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
R-PQFP-F6
17 dB
A2T27S020GNR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
TO-270BA
20 dB
A2T27S020NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN;
TO-270AA
R-PDFP-F2
A2V07H400-04NR3
NXP Semiconductors A2V07H400-04NR3 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 18.9 dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for amplifier applications, this transistor has a flatpack package style and operates b/w -40 to 225 °C.
18.9 dB
A3T18H360W23SR6
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;
A3T18H400W23SR6
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
A3T18H455W23SR6
NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
15 dB
A3T21H450W23SR6
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
14.2 dB
AFT27S012NT1
NXP Semiconductors AFT27S012NT1 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 20dB Power Gain, ideal for S BAND applications. It operates in ENHANCEMENT MODE, has a max temp of 150°C, and features a METAL-OXIDE SEMICONDUCTOR technology. The transistor is designed for AMPLIFIER use in small outline packages.
AFT31150NR5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDFP-F2; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER;
A3T21H400W23SR6
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: FLAT; Maximum Operating Temperature: 225 Cel; Transistor Element Material: SILICON;
14.5 dB
A3G22H400-04SR3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum Operating Temperature: -55 Cel; Terminal Form: FLAT;
125 V
14.3 dB
A3G20S250-01SR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;
16.5 dB
MMRF5014H-200MHZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 150 V; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
1 pF
MMRF5014H-500MHZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 2;
MRFX600GSR5
The NXP Semiconductors MRFX600GSR5 is a RF Power FET with 24.5 dB power gain, operating in the ultra high frequency band. It features an N-CHANNEL configuration, suitable for amplifier applications in small outline packages. The transistor has a min DS breakdown voltage of 179 V and can operate b/w -40 to 225 °C temperatures.
179 V
1.1 pF
R-PDSO-G4
24.5 dB
MRFX600H-230MHZ
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Maximum Operating Temperature: 225 Cel; Maximum Feedback Capacitance (Crss): 1.1 pF;
R-PDFM-F4
MRFX600H-88MHZ
NXP Semiconductors' MRFX600H-88MHZ is a N-CHANNEL RF Power FET with 24.5 dB power gain, suitable for amplifier applications in the Ultra High Frequency Band. It features a min DS breakdown voltage of 179 V, operates in enhancement mode, and has a max operating temperature of 225°C.
MRFX600HR5
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Minimum DS Breakdown Voltage: 179 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
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