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MRFX600GSR5

NXP Semiconductors

MRFX600GSR5 by NXP Semiconductors

The NXP Semiconductors MRFX600GSR5 is a RF Power FET with 24.5 dB power gain, operating in the ultra high frequency band. It features an N-CHANNEL configuration, suitable for amplifier applications in small outline packages. The transistor has a min DS breakdown voltage of 179 V and can operate b/w -40 to 225 °C temperatures.

Median Price

$185.965

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,050 parts In-Stock

1+ parts

$158.180

100+ parts

$148.690

1k+ parts

$139.200

10k+ parts

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1,050

$158.180

$148.690

$139.200

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DigiKey

USA . 1,050 parts In-Stock

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1,050

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Verical

USA . 1,050 parts In-Stock

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$213.750

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$200.100

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1,050

-

$213.750

$200.100

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Distributors (In-Stock)

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Digiode

USA . 4,852 parts In-Stock

1+ parts

$124.630

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4,852

$124.630

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Vyrian

USA . 6,571 parts In-Stock

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6,571

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Flip Electronics

USA . 950 parts In-Stock

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950

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Anansix

USA . 118 parts In-Stock

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118

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DigiKey Marketplace

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100

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Distributors (Availability)

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Corphita

USA . 3,818 parts In-Stock

1+ parts

$118.071

100+ parts

-

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3,818

$118.071

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Continental Prestige Electronics

USA . 100 parts In-Stock

1+ parts

$174.930

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100

$174.930

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Microchip USA

USA . 9,189 parts In-Stock

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$209.895

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$209.895

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UNI Independent Distributors

Spain . 1,437 parts In-Stock

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Overview

Experience superior performance and reliability with the NXP Semiconductors MRFX600GSR5 RF Power Field Effect Transistor. Known for their cutting-edge technology and innovation, NXP Semiconductors delivers top-quality products that meet the demands of today's competitive market. The MRFX600GSR5 is ideal for amplifier applications in the ultra-high frequency band, offering a minimum power gain of 24.5 dB. With its compact package design and dual terminal position, this transistor provides customers with unmatched value and efficiency. Upgrade your electronics with the MRFX600GSR5 and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for high-performance applications.

Minimum DS Breakdown Voltage: 179 V

With a high breakdown voltage, this FET can handle higher power levels and voltages, making it suitable for applications requiring high power handling capacity.

Minimum Power Gain (Gp): 24.5 dB

Having a high power gain indicates that this FET can amplify signals effectively, making it ideal for amplifier applications where signal amplification is crucial.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimized performance and efficiency in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying manufacturing processes.

Maximum Operating Temperature: 225 °C

With a high maximum operating temperature, this FET can withstand high-temperature environments, increasing its versatility and reliability in various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and reliability, making this FET a reliable choice for demanding applications.

Technical Specifications

RF Power Field Effect Transistors (FET) MRFX600GSR5 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

179 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1.1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

24.5 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRFX600GSR5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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