Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLA1011-300
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SOURCE
SINGLE
65 V
15 A
METAL-OXIDE SEMICONDUCTOR
L BAND
R-CDFM-F2
1
2
ENHANCEMENT MODE
150 Cel
CERAMIC, METAL-SEALED COFIRED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
FET General Purpose Power
YES
FLAT
DUAL
AMPLIFIER
SILICON
BLF246,112
BLF246,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the VERY HIGH FREQUENCY BAND and has a max ID of 13A. Ideal for AMPLIFIER applications, this METAL-OXIDE SEMICONDUCTOR FET is designed for ENHANCEMENT MODE operation in a FLANGE MOUNT package.
LOW NOISE
ISOLATED
13 A
VERY HIGH FREQUENCY BAND
O-CRFM-F4
4
200 Cel
ROUND
RADIAL
BLA0912-250,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 700 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 40;
75 V
NOT APPLICABLE
245
700 W
40
BLA1011-10,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2.2 A
25 W
BLA1011-2,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
R-CDSO-G2
SMALL OUTLINE
10 W
GULL WING
BLA1011-200,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 700 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: DUAL;
BLA1011-300,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
BLA1011S-200,112
BLA1011S-200,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 75V DS Breakdown Voltage and 700W Power Dissipation. It is used in L BAND applications as a SINGLE ENHANCEMENT MODE AMPLIFIER for high-frequency operations. The transistor features CERAMIC/METAL-SEALED COFIRED package body material and operates at up to 200°C.
R-CDFP-F2
FLATPACK
BLF1043,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ULTRA HIGH FREQUENCY BAND
BLF1046,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 4.5 A; Maximum Operating Temperature: 200 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
4.5 A
BLF175,112
NXP Semiconductors' BLF175,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifiers in the VHF band, it operates in Enhancement Mode with a max power dissipation of 68W. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in very high frequency applications.
HIGH RELIABILITY
125 V
4 A
1.5 ohm
68 W
NO
BLF1820-90,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (Abs) (ID): 12 A; Case Connection: SOURCE;
12 A
BLF2043F,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Qualification: Not Qualified;
BLF2043F,135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Transistor Element Material: SILICON; Terminal Position: DUAL;
BLF2045,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF242,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Additional Features: LOW NOISE, HIGH RELIABILITY;
LOW NOISE, HIGH RELIABILITY
1 A
5 ohm
16 W
13 dB
BLF244,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 1.5 ohm;
3 A
38 W
BLF245,112
NXP Semiconductors BLF245,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 13dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 68W and operates in enhancement mode at up to 200°C.
6 A
.75 ohm
BLF245B,112
NXP Semiconductors' BLF245B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Commonly used in amplifiers for Very High Frequency Band applications due to its 75W Max Power Dissipation and 4.5A Drain Current.
COMMON SOURCE, 2 ELEMENTS
R-CDFM-F4
75 W
14 dB
BLF246B,112
NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
8 A
R-CDFM-F8
8
130 W
BLF248,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .15 ohm;
25 A
.15 ohm
500 W
10 dB
BLF278,112
The NXP Semiconductors BLF278,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 20dB Power Gain. Commonly used in amplifiers for Very High Frequency applications, it features a max power dissipation of 500W and operates at up to 200°C.
18 A
.3 ohm
20 dB
BLF346,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Case Connection: ISOLATED; Terminal Form: FLAT;
O-CXFM-F6
6
14 W
UNSPECIFIED
BLF368,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT;
12 dB
BLF3G21-6,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V; Terminal Position: DUAL;
2.3 A
BLF4G20-110B,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
BLF4G20LS-110B,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;
BLF4G20LS-130,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
R-CDFP-F3
3
BLF4G20S-110B,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-CDFP-F2;
BLF542,112
NXP Semiconductors BLF542,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 13dB Power Gain. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a METAL-OXIDE SEMICONDUCTOR technology and can handle up to 1.5A Drain Current.
1.5 A
R-CDFM-F6
20 W
BLF544,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: HIGH RELIABILITY; JESD-30 Code: R-CDFM-F6;
3.5 A
1.25 ohm
48 W
11 dB
BLF546,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Operating Temperature: 200 Cel;
9 A
.6 ohm
145 W
BLF548,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
330 W
BLF647,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Package Shape: RECTANGULAR; No. of Elements: 2;
290 W
BLF6G10LS-135R,112
NXP Semiconductors' BLF6G10LS-135R,112 is an N-CHANNEL RF Power FET for ULTRA HIGH FREQUENCY AMPLIFIER applications. With a 65V DS Breakdown Voltage and 32A Drain Current, this METAL-OXIDE SEMICONDUCTOR transistor operates in ENHANCEMENT MODE at up to 225°C. Ideal for SOURCE connections, it comes in a FLATPACK package with DUAL terminals.
32 A
225 Cel
260
30
BLF6G10S-45,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
BLF6G20-110,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V;
29 A
BLF6G20-45,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2; Maximum Operating Temperature: 225 Cel;
BLF6G20LS-75,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFP-F2; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A;
BLF6G22-180PN,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 2; Moisture Sensitivity Level (MSL): 1;
S BAND
FET General Purpose Powers
BLF6G22-45,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;
BLF6G27-10,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Operating Temperature: 225 Cel; Highest Frequency Band: S BAND;
R-CDSO-F2
250
BLF6G27-45,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
20 A
BLF6G38-10,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFP-F2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: FLAT;
3.1 A
BLF6G38-25,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Operating Temperature: 200 Cel; Transistor Application: AMPLIFIER;
8.2 A
BLF861A,112
NXP Semiconductors' BLF861A,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18A Drain Current. Commonly used in amplifiers for Ultra High Frequency applications, it features a CERAMIC, METAL-SEALED COFIRED package and operates in Enhancement Mode up to 200°C.
318 W
BLF872,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
BLL1214-250,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Qualification: Not Qualified;
.4 W
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