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NXP Semiconductors RF Power Field Effect Transistors (FET) 108

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
MRFX600HSR5 by NXP Semiconductors

MRFX600HSR5

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): 1.1 pF;

SOURCE

SEPARATE, 2 ELEMENTS

179 V

METAL-OXIDE SEMICONDUCTOR

1.1 pF

ULTRA HIGH FREQUENCY BAND

R-PDFP-F4

2

4

ENHANCEMENT MODE

225 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

260

N-CHANNEL

24.5 dB

YES

FLAT

DUAL

40

AMPLIFIER

SILICON

MRFE6VS25GN-960 by NXP Semiconductors

MRFE6VS25GN-960

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

133 V

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFM-F2

1

2

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

25 W

24.5 dB

YES

FLAT

DUAL

NOT SPECIFIED

A3G26H501W17SR3 by NXP Semiconductors

A3G26H501W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 150 V; Terminal Position: QUAD; Highest Frequency Band: S BAND;

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

12.7 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A3G20S350-01SR3 by NXP Semiconductors

A3G20S350-01SR3

NXP Semiconductors

NXP Semiconductors A3G20S350-01SR3 is an N-CHANNEL RF FET with 125V DS Breakdown Voltage, 17dB Power Gain, and GaN Element. Ideal for S Band applications, this DEPLETION MODE transistor operates from -55°C to 225°C in AMPLIFIER circuits.

SINGLE

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F2

1

2

DEPLETION MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

17 dB

YES

FLAT

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A3G18D510-04SR3 by NXP Semiconductors

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F4

2

4

DEPLETION MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

15 dB

YES

FLAT

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A3G26H350W17SR3 by NXP Semiconductors

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

12 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A3G26H502W17SR3 by NXP Semiconductors

A3G26H502W17SR3

NXP Semiconductors

NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

11.3 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A3V26S004NT6 by NXP Semiconductors

A3V26S004NT6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;

SOURCE

SINGLE

105 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

1

6

ENHANCEMENT MODE

225 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

19.5 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

SILICON

MMRF1050HR6 by NXP Semiconductors

MMRF1050HR6

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

SOURCE

SEPARATE, 2 ELEMENTS

105 V

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

19 dB

YES

FLAT

DUAL

40

AMPLIFIER

SILICON

A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

13.3 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A5G23H065NT4 by NXP Semiconductors

A5G23H065NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;

SOURCE

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

14 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A5G37H110NT4 by NXP Semiconductors

A5G37H110NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;

SOURCE

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

12 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

GALLIUM NITRIDE