Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AOW4S60
Alpha & Omega Semiconductor
AOW4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 83W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
SINGLE
4 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
83 W
FET General Purpose Power
NO
AON6234
AON6234 by Alpha & Omega Semiconductor is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 220A and an avalanche energy rating of 125mJ. This transistor is commonly used for switching applications.
125 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
85 A
.005 ohm
77 pF
R-PDSO-F8
8
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
220 A
YES
FLAT
DUAL
SWITCHING
SILICON
AON7242
AON7242 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 255A and EAS of 115mJ, suitable for high-power operations. With an operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.
115 mJ
50 A
.0058 ohm
70 pF
S-PDSO-N8
SQUARE
255 A
NO LEAD
VNV28N04TR-E
STMicroelectronics
VNV28N04TR-E by STMicroelectronics is a N-CHANNEL FET with 28A max drain current and 83W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as automotive systems and industrial controls.
28 A
e3
3
250
MATTE TIN
30
VNB28N04-E
STMicroelectronics VNB28N04-E is a N-CHANNEL FET with 28A max drain current and 83W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount assembly, this MOSFET features a peak reflow temp of 245°C and MSL level of 3.
245
TIN
VNB28N04TR-E
VNB28N04TR-E by STMicroelectronics is a N-CHANNEL Power FET with 28A max drain current and 83W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as automotive systems and industrial controls.
VNB20N07-E
VNB20N07-E by STMicroelectronics is an N-CHANNEL Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm RDS(on). Ideal for applications requiring fast switching, it features a max turn on time of 580ns and turn off time of 1100ns.
COMPLEX
.07 ohm
TO-263
R-PSSO-G2
2
GULL WING
1100 ns
580 ns
AOD2N100
AOD2N100 by Alpha & Omega Semiconductor is a single N-channel power FET with 2A max drain current and 83W max power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power supplies and motor control systems.
2 A
NVD6415ANLT4G
Onsemi
NVD6415ANLT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 79mJ EAS, and 0.056 ohm RDS(ON). Suitable for high-power circuits in automotive and industrial electronics due to its small outline package and high power dissipation of 83W.
79 mJ
100 V
23 A
.056 ohm
175 Cel
260
80 A
AEC-Q101
NVD6415ANT4G
NVD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
.055 ohm
89 A
UPA2739T1A-E2-AY
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 160 mJ; Package Style (Meter): SMALL OUTLINE;
160 mJ
30 V
.0028 ohm
R-PDSO-N8
P-CHANNEL
180 A
Other Transistors
UPA2764T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; No. of Elements: 1;
130 A
UPA2765T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
100 A
UPA2766T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; JESD-609 Code: e3;
.00088 ohm
SPI07N60S5HKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Qualification: Not Qualified; JEDEC-95 Code: TO-262AA;
AVALANCHE RATED
230 mJ
600 V
7.3 A
.6 ohm
TO-262AA
R-PSIP-T3
IN-LINE
NOT SPECIFIED
14.6 A
Not Qualified
THROUGH-HOLE
SPP07N60S5HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
TO-220AB
R-PSFM-T3
FLANGE MOUNT
IPP50R399CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
215 mJ
ISOLATED
500 V
9 A
.399 ohm
20 A
FET General Purpose Powers
IPP60R380E6XKSA1
Infineon's IPP60R380E6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring a single configuration with built-in diode, it offers 0.38 ohm RDS(on) and 30A IDM. This power transistor operates in enhancement mode, with 83W max power dissipation and 150°C max temp.
210 mJ
10.6 A
.38 ohm
30 A
NDD60N745U1-1G
NDD60N745U1-1G by Onsemi is a N-channel Power FET with 6.8A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology. Suitable for various industrial and automotive uses due to its robust design and high performance capabilities.
6.8 A
NTMFS4H02NFT3G
NTMFS4H02NFT3G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, making it suitable for demanding environments requiring efficient power management.
193 A
NTMFS4H02NT1G
NTMFS4H02NT1G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
NTMFS4H02NT3G
NTMFS4H02NT3G by Onsemi is a single N-channel Power FET with 193A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology.
SIR882DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR882DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 80A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0087 ohm max on-resistance, and operates in enhancement mode.
45 mJ
60 A
.0087 ohm
R-XDSO-C5
5
UNSPECIFIED
C BEND
VNB20N07
VNB20N07 by STMicroelectronics is an N-channel Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm on-resistance, making it suitable for high-power applications. The transistor features a fast turn-on time of 580ns and turn-off time of 1100ns, ideal for efficient switching operations.
SPP07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 230 mJ;
NVMFS5C442NLT1G
NVMFS5C442NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
265 mJ
.0037 ohm
37 pF
R-PDSO-F5
900 A
Matte Tin (Sn) - annealed
NVMFS5C442NLT3G
NVMFS5C442NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFS5C442NLWFT1G
NVMFS5C442NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A Drain Current, and 0.0037 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 83W in small outline package.
NVMFS5C442NLWFT3G
NVMFS5C442NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0037 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
SPD07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 600 V;
AVALANCHE RATED, HIGH VOLTAGE
TO-252AA
SPU07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 7.3 A;
TO-251AA
IPD50R399CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-30 Code: R-PSSO-G2; Avalanche Energy Rating (EAS): 215 mJ;
NTD5803NT4G
NTD5803NT4G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 76A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 240mJ Avalanche Energy Rating, and 0.0072 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
240 mJ
76 A
.0072 ohm
R-PDSO-G2
228 A
SPD30N06S2-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
150 mJ
55 V
.023 ohm
TO-252
120 A
SPD07N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Additional Features: AVALANCHE RATED;
21.9 A
IPB06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Peak Reflow Temperature (C): 220; Terminal Finish: TIN LEAD;
LOGIC LEVEL COMPATIBLE
225 mJ
25 V
91 A
.0095 ohm
TO-263AB
e0
220
350 A
TIN LEAD
IPI06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
.0099 ohm
IPP06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IPU07N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;
375 mJ
.0101 ohm
210 A
VNB20N0713TR
VNB20N0713TR by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 83W, low on-resistance of 0.07Ω, and fast turn-on/off times of 580ns and 1100ns, respectively. Ideal for compact electronic designs, it ensures reliable performance in surface mount configurations.
IPD06N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 200 A; Maximum Operating Temperature: 175 Cel;
.0061 ohm
200 A
IPF06N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
.0094 ohm
R-PSSO-G3
IPS06N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 225 mJ; Operating Mode: ENHANCEMENT MODE;
.0096 ohm
IPB06N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
164 mJ
.0063 ohm
NVD6495NLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
25 A
.054 ohm
NVD5803NT4G
NVD5803NT4G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. Features include 40V DS Breakdown Voltage, 228A Pulsed Drain Current, and 0.0057 ohm Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
.0057 ohm
NDD04N60Z-1G
NDD04N60Z-1G by Onsemi is a N-channel FET with 600V DS breakdown voltage, 20A IDM, and 120mJ EAS. Ideal for power applications requiring high drain current handling in enhancement mode operation.
120 mJ
4.1 A
2.6 A
2 ohm
NDD04N60ZT4G
NDD04N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 20A IDM, and 120mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies or motor control systems.
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