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83 W Power Field Effect Transistors (FET) 69

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NDD05N50Z-1G by Onsemi

NDD05N50Z-1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSIP-T3;

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

3 A

4.7 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

83 W

19 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NDD05N50ZT4G by Onsemi

NDD05N50ZT4G

Onsemi

NDD05N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 19A IDM, and 130mJ EAS. It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and current capabilities.

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

3 A

4.7 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

19 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SILICON

IPB06N03LAG by Infineon Technologies

IPB06N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 25 V; Maximum Drain-Source On Resistance: .0095 ohm;

LOGIC LEVEL COMPATIBLE

225 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

83 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NVD6828NLT4G-VF01 by Onsemi

NVD6828NLT4G-VF01

Onsemi

NVD6828NLT4G-VF01 by Onsemi is a Power FET with 90V DS Breakdown Voltage, 206A IDM, and 0.025 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

90 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

90 V

41 A

41 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

206 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

IXTA02N250HVTRL by Littelfuse

IXTA02N250HVTRL

Littelfuse

The Littelfuse IXTA02N250HVTRL is a N-CHANNEL FET with 2500V DS Breakdown Voltage. It operates in Enhancement Mode, with 0.2A Drain Current and 450 ohm On Resistance. Ideal for high-voltage applications requiring low power dissipation and small outline package style.

DRAIN

SINGLE WITH BUILT-IN DIODE

2500 V

.2 A

.2 A

450 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

.6 A

YES

MATTE TIN

GULL WING

SINGLE

10

SILICON

IPP60R380P6XKSA1 by Infineon Technologies

IPP60R380P6XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Finish: TIN; Terminal Form: THROUGH-HOLE;

210 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

10.6 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83 W

29 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS5C442NT1G by Onsemi

NVMFS5C442NT1G

Onsemi

NVMFS5C442NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.

220 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

140 A

140 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C442NT3G by Onsemi

NVMFS5C442NT3G

Onsemi

NVMFS5C442NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

220 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

140 A

140 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C442NWFT1G by Onsemi

NVMFS5C442NWFT1G

Onsemi

NVMFS5C442NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.

220 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

140 A

140 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C442NWFT3G by Onsemi

NVMFS5C442NWFT3G

Onsemi

NVMFS5C442NWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.

220 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

140 A

140 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C442NLTT3G by Onsemi

NTMFS5C442NLTT3G

Onsemi

The Onsemi NTMFS5C442NLTT3G is a N-CHANNEL FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(ON). It is used in power applications due to its 900A IDM, 265mJ EAS rating, and -55 to 175 °C operating temperature range.

265 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

130 A

130 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C423NLT1G by Onsemi

NVMFS5C423NLT1G

Onsemi

NVMFS5C423NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 900A Max Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive systems or industrial equipment.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

150 A

150 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C423NLT3G by Onsemi

NVMFS5C423NLT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: .003 ohm; Package Body Material: PLASTIC/EPOXY;

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

150 A

150 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C423NLWFT1G by Onsemi

NVMFS5C423NLWFT1G

Onsemi

NVMFS5C423NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics meeting AEC-Q101 standards.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

150 A

150 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C423NLWFT3G by Onsemi

NVMFS5C423NLWFT3G

Onsemi

NVMFS5C423NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.003 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance and 175 °C max operating temp.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

150 A

150 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVD6415ANLT4G-VF01 by Onsemi

NVD6415ANLT4G-VF01

Onsemi

NVD6415ANLT4G-VF01 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 79mJ EAS. Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 175 °C operating temperature range.

79 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

23 A

23 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

80 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

SVD5803NT4G by Onsemi

SVD5803NT4G

Onsemi

The Onsemi SVD5803NT4G is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 85A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. Perfect for high-power circuit designs requiring efficient switching capabilities.

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

85 A

85 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

228 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NVMFS5C442NLWFAFT1G by Onsemi

NVMFS5C442NLWFAFT1G

Onsemi

NVMFS5C442NLWFAFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.

265 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

130 A

130 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

FCP360N65S3R0 by Onsemi

FCP360N65S3R0

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;

40 mJ

SINGLE WITH BUILT-IN DIODE

650 V

10 A

10 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

83 W

25 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

FDD4685-F085P by Onsemi

FDD4685-F085P

Onsemi

FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.

121 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

32 A

32 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

205 pF

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

83 W

100 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

81 ns

43 ns

FDU5N60NZTU by Onsemi

FDU5N60NZTU

Onsemi

FDU5N60NZTU by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 16A IDM and 216mJ EAS. With a max power dissipation of 83W, this transistor operates in ENHANCEMENT MODE and has a -55 to 150 °C temperature range.

216 mJ

SINGLE WITH BUILT-IN DIODE

600 V

4 A

4 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

7.5 pF

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

83 W

16 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 ns

90 ns