Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NP22N055SLE-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (Abs) (ID): 22 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SINGLE
22 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
45 W
FET General Purpose Power
YES
NP22N055SHE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (Abs) (ID): 22 A; Operating Mode: ENHANCEMENT MODE;
TPCA8010-H(TE12L,Q)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
5.5 A
150 Cel
TPCA8A04-H(TE12L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (ID): 44 A; No. of Elements: 1;
44 A
STF120NF10
STMicroelectronics
STF120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 164A Max Pulsed Drain Current and 0.0105 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 45W at 175 °C.
550 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
100 V
41 A
.0105 ohm
TO-220AB
R-PSFM-T3
e3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
164 A
NO
MATTE TIN
THROUGH-HOLE
SWITCHING
SILICON
STDLED524
STDLED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage and 14A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as in industrial automation systems or LED lighting solutions.
110 mJ
DRAIN
525 V
4 A
2.6 ohm
TO-252
R-PSSO-G2
2
-55 Cel
SMALL OUTLINE
14 A
GULL WING
STPLED524
STPLED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. It is used in power applications requiring high voltage tolerance and current handling capabilities.
STULED524
STULED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling in industrial settings.
TO-251
R-PSIP-T3
IN-LINE
NP22N055SLE-E2-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 22 A;
25 mJ
55 V
.051 ohm
NOT SPECIFIED
55 A
IRFZ24NSTRL
International Rectifier
IRFZ24NSTRL by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 68A IDM, 71mJ EAS, and 0.07ohm RDS(on). With a max power dissipation of 45W and operating temp of 175°C, it's suitable for high-power circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY
71 mJ
17 A
.07 ohm
TO-263AB
e0
68 A
Not Qualified
TIN LEAD
IRFZ24NSTRR
IRFZ24NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. It is used for SWITCHING applications, featuring 68A IDM and 71mJ EAS. This SINGLE transistor has a 0.07 ohm RDS(on) and operates in ENHANCEMENT MODE at up to 175°C ambient temperature.
IRLR024NTRR
IRLR024NTRR by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage and 17A Drain Current. Ideal for power applications, it operates in Enhancement Mode with 0.065 ohm On Resistance, offering high efficiency in small outline packages.
LOGIC LEVEL COMPATIBLE
.065 ohm
TO-252AA
38 W
FET General Purpose Powers
STB3N62K3
STB3N62K3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 10.8A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
100 mJ
620 V
2.7 A
2.5 ohm
245
10.8 A
30
STP3N62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Terminal Position: SINGLE; Terminal Finish: MATTE TIN;
STD7NS20T4
STD7NS20T4 by STMicroelectronics is an N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 28A Max Pulsed Drain Current, and 0.4 ohm Max Drain-Source On Resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150 °C.
60 mJ
200 V
7 A
.4 ohm
260
28 A
Matte Tin (Sn) - annealed
STP22NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
200 mJ
30 V
.06 ohm
88 A
STD3NK60ZD
STD3NK60ZD by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 9.6A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, operating in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
150 mJ
600 V
2.4 A
3.6 ohm
9.6 A
STD7NM50N-1
STD7NM50N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
500 V
5 A
.78 ohm
TO-251AA
20 A
STD7NM50N
STD7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STP7NM50N
STP7NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 5A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-temperature environments, it supports efficient circuit designs.
STD6NM60N-1
STD6NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
65 mJ
4.6 A
.92 ohm
18.4 A
STD6NM60N
STD6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STP6NM60N
STP6NM60N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a power dissipation of up to 45W. Its compact design suits various electronic circuits.
IPG20N06S3L-23
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
33 A
.023 ohm
R-PDSO-F8
8
80 A
FLAT
DUAL
IRFZ24N,127
NXP Semiconductors
NXP Semiconductors' IRFZ24N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications due to its 0.07 ohm Drain-Source On Resistance and 30mJ EAS rating. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
ESD PROTECTED
30 mJ
2SK3902(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
30 A
STP5N60M2
STP5N60M2 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 3.5A max drain current. It operates in enhancement mode with a max power dissipation of 45W. Its compact design ensures efficient thermal management in various electronic circuits.
AVALANCHE ENERGY RATED
80 mJ
3.5 A
1.4 ohm
.75 pF
85 ns
15 ns
STP16NF06L
STP16NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 64A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Temp, 127mJ EAS rating, and SINGLE configuration with BUILT-IN DIODE.
127 mJ
60 V
16 A
.1 ohm
64 A
STP5NK40Z
STP5NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in various electronic circuits.
130 mJ
400 V
3 A
1.8 ohm
12 A
STD4NK50Z-1
STD4NK50Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
120 mJ
2.7 ohm
STP4NK50Z
STP4NK50Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
STB3NK60ZT4
STB3NK60ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 2.4A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STB6NM60N
STB6NM60N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
STF20NM60D
STF20NM60D by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 80A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
700 mJ
.29 ohm
STP2NK60Z
STP2NK60Z by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 600V breakdown voltage, 1.5A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks in electronic circuits.
90 mJ
1.4 A
1.5 A
8 ohm
6 A
IRL3715ZSPBF
IRL3715ZSPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.011 ohm On Resistance, and 175°C Operating Temperature.
44 mJ
20 V
50 A
.011 ohm
200 A
Matte Tin (Sn) - with Nickel (Ni) barrier
STD1NK80Z-1
STD1NK80Z-1 by STMicroelectronics is a N-channel Power FET with 800V DS breakdown voltage and 5A max pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a package style of IN-LINE, it has an operating temperature range from -55 to 150°C.
50 mJ
800 V
1 A
16 ohm
6.7 pF
Matte Tin (Sn)
STD2NK70Z-1
STD2NK70Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
700 V
1.6 A
7 ohm
6.4 A
STD2NK70ZT4
STD2NK70ZT4 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STD4NK50ZD-1
STD4NK50ZD-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
STD4NK50ZD
STD4NK50ZD by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A pulsed drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
STP4NK50ZD
STP4NK50ZD by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 45W. This versatile transistor is suitable for high-temperature environments up to 150 °C.
STD36NH02L
STD36NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronic devices.
24 V
.026 ohm
120 A
STP27N3LH5
STP27N3LH5 by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
27 A
.028 ohm
108 A
STP7NM60N
STP7NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient power management in various electronic circuits.
119 mJ
.9 ohm
FQD4P25TM-WS
Onsemi
FQD4P25TM-WS by Onsemi is a P-CHANNEL Power FET with 250V DS Breakdown Voltage, 12.4A IDM, and 2.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 45W. Suitable for surface mount with a temperature range of -55 to 150°C.
280 mJ
250 V
3.1 A
2.1 ohm
P-CHANNEL
12.4 A
Other Transistors
TK090A65Z,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Pulsed Drain Current (IDM): 120 A; JESD-30 Code: R-PSFM-T3;
265 mJ
650 V
.09 ohm
2 pF
TK25A20D,S5X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
118 mJ
25 A
21 pF
100 A
© 2023 All rights reserved
