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1.5 W Power Bipolar Junction Transistors (BJT) 25

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

ZTX618STOA by Diodes Incorporated

ZTX618STOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STOB by Diodes Incorporated

ZTX618STOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STZ by Diodes Incorporated

ZTX618STZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

140 MHz

.255 V

2STL2580 by STMicroelectronics

2STL2580

STMicroelectronics

2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.

1 A

400 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX0560 by STMicroelectronics

STX0560

STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

1 A

600 V

SINGLE

70

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

SBCP68T1G by Onsemi

SBCP68T1G

Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

COLLECTOR

1 A

20 V

SINGLE

60

TO-261

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

60 MHz

.5 V

2STL2580-AP by STMicroelectronics

2STL2580-AP

STMicroelectronics

2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.

1 A

SINGLE

60

1

150 Cel

NPN

1.5 W

Other Transistors

NO

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

STBV32G-AP by STMicroelectronics

STBV32G-AP

STMicroelectronics

STBV32G-AP by STMicroelectronics is a single NPN BJT designed for efficient switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Ideal for various electronic circuits requiring reliable performance.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV32G by STMicroelectronics

STBV32G

STMicroelectronics

STBV32G by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STL106D by STMicroelectronics

STL106D

STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

1.5 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

MJE210G by Onsemi

MJE210G

Onsemi

MJE210G by Onsemi is a PNP BJT transistor with 40V VCE, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 65MHz and single configuration in a plastic/epoxy package. Operating up to 150°C, it has through-hole terminals with matte tin finish.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

2N6035G by Onsemi

2N6035G

Onsemi

The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2N6036G by Onsemi

2N6036G

Onsemi

2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2N6039G by Onsemi

2N6039G

Onsemi

2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

BF720T3G by Onsemi

BF720T3G

Onsemi

BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.

COLLECTOR

.1 A

300 V

SINGLE

50

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

60 MHz

MJE172G by Onsemi

MJE172G

Onsemi

MJE172G by Onsemi is a PNP BJT transistor with 80V VCEO, 3A IC, and 1.5W power dissipation. Ideal for switching applications with a min hFE of 12 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.

3 A

80 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE180G by Onsemi

MJE180G

Onsemi

MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.

3 A

40 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE210T by Onsemi

MJE210T

Onsemi

MJE210T by Onsemi is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its hFE of 10 and fT of 65MHz. Packaged in plastic/epoxy with through-hole terminals, it operates up to 150 °C.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

2N6034G by Onsemi

2N6034G

Onsemi

2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.

4 A

40 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

BCP51-16-TP by Micro Commercial Components

BCP51-16-TP

Micro Commercial Components

BCP51-16-TP by Micro Commercial Components is a PNP BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power applications in small outline packages, it operates b/w -55 to 150°C with a max VCE of 45V.

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCP55-16-TP by Micro Commercial Components

BCP55-16-TP

Micro Commercial Components

BCP55-16-TP by Micro Commercial Components is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages, operating b/w -55°C to 150°C. Suitable for surface mount designs needing a compact and efficient transistor solution.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V