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16 A Power Bipolar Junction Transistors (BJT) 15

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJL21193DG by Onsemi

NJL21193DG

Onsemi

NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.

16 A

250 V

SINGLE WITH BUILT-IN DIODE

8

R-PSFM-T5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

NJL21194DG by Onsemi

NJL21194DG

Onsemi

NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.

16 A

250 V

SINGLE WITH BUILT-IN DIODE

8

R-PSFM-T5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

NJW21193G by Onsemi

NJW21193G

Onsemi

NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.

16 A

250 V

SINGLE

8

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21193 by Onsemi

MJW21193

Onsemi

MJW21193 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21194 by Onsemi

MJW21194

Onsemi

MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21195 by Onsemi

MJW21195

Onsemi

MJW21195 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21196 by Onsemi

MJW21196

Onsemi

MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJ21193G by Onsemi

MJ21193G

Onsemi

MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.

COLLECTOR

16 A

250 V

SINGLE

8

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

MJ15022G by Onsemi

MJ15022G

Onsemi

The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.

COLLECTOR

16 A

200 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

MJ15023G by Onsemi

MJ15023G

Onsemi

The Onsemi MJ15023G is a PNP BJT transistor with 200V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 5. Its metal package with flange mount style ensures efficient heat dissipation at up to 200°C operating temperature.

COLLECTOR

16 A

200 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

MJE4343G by Onsemi

MJE4343G

Onsemi

MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.

COLLECTOR

16 A

160 V

SINGLE

8

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

MJE4353G by Onsemi

MJE4353G

Onsemi

MJE4353G by Onsemi is a PNP BJT transistor with 160V VCEO, 16A IC, and 125W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

16 A

160 V

SINGLE

8

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

MJL21195G by Onsemi

MJL21195G

Onsemi

MJL21195G by Onsemi is a PNP BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's package style is flange mount with through-hole terminals in a rectangular shape.

16 A

250 V

SINGLE

8

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJL21196G by Onsemi

MJL21196G

Onsemi

The Onsemi MJL21196G is a NPN BJT transistor with 200W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max current of 16A, and transition frequency of 4MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

16 A

250 V

SINGLE

8

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21194G by Onsemi

MJW21194G

Onsemi

MJW21194G by Onsemi is a NPN Power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-temperature environments up to 150°C.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz