Loading...

12 A Power Bipolar Junction Transistors (BJT) 19

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TTC3710B by Toshiba

TTC3710B

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;

ISOLATED

12 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

80 MHz

NTE247 by Nte Electronics

NTE247

Nte Electronics

NTE247 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With 150W max power dissipation and 100V max collector-emitter voltage, it offers high performance. Featuring built-in diode and resistor, this transistor has 12A max collector current.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

NTE248 by Nte Electronics

NTE248

Nte Electronics

NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

BUL89 by STMicroelectronics

BUL89

STMicroelectronics

BUL89 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2408HI by STMicroelectronics

ST2408HI

STMicroelectronics

ST2408HI by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

12 A

600 V

SINGLE

6

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BUL98 by STMicroelectronics

BUL98

STMicroelectronics

BUL98 by STMicroelectronics is a NPN Power BJT with 450V VCEO, 12A IC, and 110W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element and matte tin finish make it reliable for use in various industrial settings.

12 A

450 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP12IE90F4 by STMicroelectronics

STP12IE90F4

STMicroelectronics

STP12IE90F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

ISOLATED

12 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

21 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW13009 by STMicroelectronics

STW13009

STMicroelectronics

STW13009 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 12A, and max. power dissipation of 125W. Ideal for switching applications due to its single configuration and silicon element material in a rectangular package shape with through-hole terminals.

12 A

400 V

SINGLE

10

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STWH13009 by STMicroelectronics

STWH13009

STMicroelectronics

STWH13009 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-power circuits with through-hole mounting.

12 A

400 V

SINGLE

11

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STH13009 by STMicroelectronics

STH13009

STMicroelectronics

STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

11

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

100 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BDW93CFTU by Fairchild Semiconductor

BDW93CFTU

Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

ISOLATED

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE

100

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2310DHI by STMicroelectronics

ST2310DHI

STMicroelectronics

ST2310DHI from STMicroelectronics is a robust NPN BJT designed for efficient switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 600V. Ideal for high-performance electronic circuits.

ISOLATED

12 A

600 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2STBN15D100T4 by STMicroelectronics

2STBN15D100T4

STMicroelectronics

2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

70 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUV27G by Onsemi

BUV27G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 120 V;

COLLECTOR

12 A

120 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJE13009G by Onsemi

MJE13009G

Onsemi

MJE13009G by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 2W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 6. Packaged in plastic/epoxy with flange mount style, it operates up to 150 °C making it suitable for various industrial uses.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

12 A

400 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

2 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

ST2111FX by STMicroelectronics

ST2111FX

STMicroelectronics

ST2111FX by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 700V, a min DC current gain (hFE) of 4.5, and supports up to 12A collector current. Ideal for power management in electronic circuits.

ISOLATED

12 A

700 V

SINGLE

4.5

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDW93C-S by Bourns

BDW93C-S

Bourns

The Bourns BDW93C-S is a NPN Darlington transistor with hFE of 100, IC of 12A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C. Suitable for use in various electronic circuits requiring high current amplification.

COLLECTOR

12 A

100 V

DARLINGTON

100

TO-220AB

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SILICON

2SB817C-1E by Onsemi

2SB817C-1E

Onsemi

The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.

12 A

140 V

SINGLE

35

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6052PBFREE by Central Semiconductor

2N6052PBFREE

Central Semiconductor

2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.

COLLECTOR

12 A

500 pF

100 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

150 W

NO

MATTE TIN

PIN/PEG

BOTTOM

10

SWITCHING

SILICON

4 MHz

3 V