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250 W Insulated Gate Bipolar Transistors (IGBT) 33

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTG30N60FLWG by Onsemi

NGTG30N60FLWG

Onsemi

NGTG30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.

60 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

250 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

NGTB30N60FLWG by Onsemi

NGTB30N60FLWG

Onsemi

NGTB30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at up to 150 °C operating temperature.

60 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

250 W

Insulated Gate BIP Transistors

NO

TIN

IKW40N65F5FKSA1 by Infineon Technologies

IKW40N65F5FKSA1

Infineon Technologies

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

34 ns

2.1 V

IKW40N65H5FKSA1 by Infineon Technologies

IKW40N65H5FKSA1

Infineon Technologies

IKW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 74A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

217 ns

32 ns

2.1 V

IKD15N60RAATMA1 by Infineon Technologies

IKD15N60RAATMA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 430 ns; Maximum Gate-Emitter Voltage: 20 V;

30 A

600 V

5.7 V

20 V

175 Cel

-40 Cel

NOT SPECIFIED

N-Channel

250 W

NOT SPECIFIED

SILICON

430 ns

26 ns

2.1 V

IXGM40N60A by IXYS Corporation

IXGM40N60A

IXYS Corporation

IXYS Corporation's IXGM40N60A is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 3V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration, 900ns toff, and 300ns ton. The METAL package with PIN/PEG terminals can handle up to 250W power dissipation at 150°C ambient temperature.

HIGH SPEED

COLLECTOR

75 A

600 V

SINGLE

5 V

20 V

TO-204AE

O-MBFM-P2

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

POWER CONTROL

SILICON

900 ns

300 ns

3 V

IXGN50N60BD2 by IXYS Corporation

IXGN50N60BD2

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

FAST

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

200 ns

50 ns

2.5 V

IXGH50N60A by IXYS Corporation

IXGH50N60A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;

FAST

COLLECTOR

75 A

600 V

SINGLE

200 ns

5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

880 ns

290 ns

2.7 V

IXGN60N60 by IXYS Corporation

IXGN60N60

IXYS Corporation

IXYS Corporation's IXGN60N60 is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 250W Pd. Ideal for POWER CONTROL applications, it features a toff of 650ns, tf of 700ns, and ton of 50ns. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures efficient heat dissipation up to 150°C.

FAST

ISOLATED

100 A

600 V

SINGLE

700 ns

5 V

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

650 ns

50 ns

NGTB45N60SWG by Onsemi

NGTB45N60SWG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;

90 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

250 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGW40NC60W by STMicroelectronics

STGW40NC60W

STMicroelectronics

STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

46 ns

STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGW30NC60VD by STMicroelectronics

STGW30NC60VD

STMicroelectronics

STGW30NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

42.5 ns

STGW40NC60WD by STMicroelectronics

STGW40NC60WD

STMicroelectronics

STGW40NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 280 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGW35NC60WD by STMicroelectronics

STGW35NC60WD

STMicroelectronics

STGW35NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 250 W, and operates at up to 150 °C. Its fast switching times (ton: 42.5 ns, toff: 197 ns) enhance performance in various electronic systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

197 ns

42.5 ns

STGW40NC60KD by STMicroelectronics

STGW40NC60KD

STMicroelectronics

STGW40NC60KD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 338 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

338 ns

64 ns

IKD15N60R by Infineon Technologies

IKD15N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

430 ns

26 ns

STGW45HF60WD by STMicroelectronics

STGW45HF60WD

STMicroelectronics

STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.

LOW CONDUCTION LOSS

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

44 ns

STGW38IH130D by STMicroelectronics

STGW38IH130D

STMicroelectronics

STGW38IH130D by STMicroelectronics is an N-CHANNEL IGBT with 1300V VCE, 63A IC, and 250W Ptot. Ideal for power control applications, it features a built-in diode and operates up to 150°C.

63 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

SGL160N60UFTU by Fairchild Semiconductor

SGL160N60UFTU

Fairchild Semiconductor

SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

160 A

600 V

SINGLE

150 ns

6.5 V

20 V

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

262 ns

150 ns

STGP100N30 by STMicroelectronics

STGP100N30

STMicroelectronics

STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.

90 A

330 V

SINGLE

5.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

310 ns

STGW39NC60VD by STMicroelectronics

STGW39NC60VD

STMicroelectronics

STGW39NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 366ns.

ISOLATED

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

366 ns

46 ns

IKW40N65H5AXKSA1 by Infineon Technologies

IKW40N65H5AXKSA1

Infineon Technologies

IKW40N65H5AXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications, it has a toff of 204ns and ton of 32ns. Operating b/w -40 to 175°C, it features a VCE(max) of 650V and VGE(th) of 4.8V.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

204 ns

32 ns

2.1 V

A1P35S12M3 by STMicroelectronics

A1P35S12M3

STMicroelectronics

A1P35S12M3 by STMicroelectronics is a complex N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

A2C35S12M3-F by STMicroelectronics

A2C35S12M3-F

STMicroelectronics

A2C35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

145 ns

2.45 V

A2C35S12M3 by STMicroelectronics

A2C35S12M3

STMicroelectronics

A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

170 ns

2.45 V

F475R07W2H3B51BPSA1 by Infineon Technologies

F475R07W2H3B51BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

ISOLATED

75 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X18

4

18

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

300 ns

45 ns

1.55 V

A1P35S12M3-F by STMicroelectronics

A1P35S12M3-F

STMicroelectronics

A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

AIGW40N65H5XKSA1 by Infineon Technologies

AIGW40N65H5XKSA1

Infineon Technologies

AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

203 ns

31 ns

2.1 V

AIHD15N60RATMA1 by Infineon Technologies

AIHD15N60RATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; No. of Elements: 1;

COLLECTOR

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

250 W

AEC-Q101

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

430 ns

26 ns

2.1 V

F575R06KE3B5BOSA1 by Infineon Technologies

F575R06KE3B5BOSA1

Infineon Technologies

N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum VCEsat: 1.9 V; Package Body Material: UNSPECIFIED;

ISOLATED

600 V

COMPLEX

6.5 V

20 V

R-XUFM-X35

2

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

270 ns

45 ns

1.9 V

AIGW40N65F5XKSA1 by Infineon Technologies

AIGW40N65F5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Terminal Finish: TIN;

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

30 ns

2.1 V

AIKW40N65DF5XKSA1 by Infineon Technologies

AIKW40N65DF5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Transistor Application: POWER CONTROL;

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

30 ns

2.1 V