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150 W Insulated Gate Bipolar Transistors (IGBT) 32

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP30H60DF by STMicroelectronics

STGP30H60DF

STMicroelectronics

STMicroelectronics' STGP30H60DF is an N-CHANNEL IGBT with 150W power dissipation, 600V collector-emitter voltage, and 60A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.

60 A

600 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

150 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

FS30R06W1E3B11BOMA1 by Infineon Technologies

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 45 A; Transistor Application: POWER CONTROL;

ISOLATED

45 A

600 V

COMPLEX

6.5 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

355 ns

52 ns

2 V

IXSH24N60A by IXYS Corporation

IXSH24N60A

IXYS Corporation

IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.

HIGH SPEED

COLLECTOR

48 A

600 V

SINGLE

500 ns

6.5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

925 ns

300 ns

2.7 V

IXSH24N60AU1 by IXYS Corporation

IXSH24N60AU1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; No. of Terminals: 3;

FAST

COLLECTOR

48 A

600 V

SINGLE WITH BUILT-IN DIODE

500 ns

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

925 ns

300 ns

2.7 V

IXGH31N60 by IXYS Corporation

IXGH31N60

IXYS Corporation

IXGH31N60 by IXYS Corp is an N-CHANNEL IGBT transistor with VCEsat of 1.8V and IC of 60A. Ideal for POWER CONTROL applications, it has a toff of 1600ns, tf of 1100ns, and can handle up to 150W power dissipation.

COLLECTOR

60 A

600 V

SINGLE

1100 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

40 ns

1.8 V

STGB20N40LZ by STMicroelectronics

STGB20N40LZ

STMicroelectronics

STGB20N40LZ IGBT from STMicroelectronics features a max VCEsat of 1.8V, supports automotive ignition applications, and operates at up to 175 °C. It offers a max collector current of 25A and includes built-in TVS diode for enhanced protection. Ideal for compact designs with its surface mount configuration.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.5 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

8200 ns

5200 ns

1.8 V

STGB20NB32LZ by STMicroelectronics

STGB20NB32LZ

STMicroelectronics

STGB20NB32LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 325 V, power dissipation of 150 W, and operates at up to 175 °C. Its compact surface mount design ensures efficient performance in demanding environments.

COLLECTOR

40 A

325 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15900 ns

2900 ns

STGB20NB37LZ by STMicroelectronics

STGB20NB37LZ

STMicroelectronics

STGB20NB37LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector current of 40 A, power dissipation of 150 W, and operates up to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

ESD PROTECTED

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

NGB8206N by Onsemi

NGB8206N

Onsemi

NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGB18N40LZ-1 by STMicroelectronics

STGB18N40LZ-1

STMicroelectronics

STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-262AA

R-PSIP-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

IKD10N60R by Infineon Technologies

IKD10N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

428 ns

24 ns

STGP18N40LZ by STMicroelectronics

STGP18N40LZ

STMicroelectronics

STGP18N40LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGW20NB60KD by STMicroelectronics

STGW20NB60KD

STMicroelectronics

STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

280 ns

76 ns

STGB10NB40LZT4 by STMicroelectronics

STGB10NB40LZT4

STMicroelectronics

STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.

COLLECTOR

20 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

12000 ns

1570 ns

NGB8202NT4 by Onsemi

NGB8202NT4

Onsemi

NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

MGP15N40CLG by Onsemi

MGP15N40CLG

Onsemi

MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20000 ns

2.1 V

22 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

150 W

Not Qualified

6000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

NGB8202NT4G by Onsemi

NGB8202NT4G

Onsemi

NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

18500 ns

6500 ns

FGB3040G2-F085 by Onsemi

FGB3040G2-F085

Onsemi

FGB3040G2-F085 by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 150 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 390 V, such as power electronics and motor control systems.

41 A

390 V

15000 ns

2.2 V

12 V

e3

1

175 Cel

260

N-CHANNEL

150 W

7000 ns

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

30

FGD2736G3-F085 by Onsemi

FGD2736G3-F085

Onsemi

Onsemi's FGD2736G3-F085 is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.65V, collector current of 21A, and can operate in temperatures ranging from -40 to 175 °C. This surface-mount transistor features a rectangular package shape with gull wing terminals.

COLLECTOR

21 A

360 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

2.2 V

10 V

TO-252AA

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

7000 ns

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

30000 ns

6300 ns

11000 ns

3900 ns

1.65 V

STGB25N40LZAG by STMicroelectronics

STGB25N40LZAG

STMicroelectronics

STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.

COLLECTOR

25 A

435 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

IKD10N60RFAATMA1 by Infineon Technologies

IKD10N60RFAATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

198 ns

27 ns

2.5 V

AIHD10N60RATMA1 by Infineon Technologies

AIHD10N60RATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

428 ns

24 ns

2.1 V

AIHD10N60RFATMA1 by Infineon Technologies

AIHD10N60RFATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Minimum Operating Temperature: -40 Cel;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

198 ns

27 ns

2.5 V

STGB19N40LZ by STMicroelectronics

STGB19N40LZ

STMicroelectronics

STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.

BULK: 1000

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

FGD2736G3-F085V by Onsemi

FGD2736G3-F085V

Onsemi

Onsemi's FGD2736G3-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.65V, collector current of 37.5A, and operating temperature range from -40 to 175 °C. This surface-mount transistor has a package style of small outline and meets AEC-Q101 standards.

37.5 A

330 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

2.2 V

10 V

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

30000 ns

6300 ns

11000 ns

3900 ns

1.65 V

LGB8245TI by Littelfuse

LGB8245TI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Transistor Element Material: SILICON;

COLLECTOR

20 A

500 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

12000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

6000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

20000 ns

12500 ns

8000 ns

4400 ns

STGB25N36LZAG by STMicroelectronics

STGB25N36LZAG

STMicroelectronics

STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGI25N36LZAG by STMicroelectronics

STGI25N36LZAG

STMicroelectronics

STGI25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, supports up to 25A collector current, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in harsh environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGD25N36LZAG by STMicroelectronics

STGD25N36LZAG

STMicroelectronics

STGD25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, power dissipation of 150W, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in demanding environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

LGB8202ATI by Littelfuse

LGB8202ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

24000 ns

24000 ns

9000 ns

18500 ns

LGB8206ATI by Littelfuse

LGB8206ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

SILICON

24000 ns

18500 ns

9000 ns

6500 ns

LGB8206ARI by Littelfuse

LGB8206ARI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

SILICON

24000 ns

18500 ns

9000 ns

6500 ns