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70 A Insulated Gate Bipolar Transistors (IGBT) 35

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DDB6U134N16RRBOSA1 by Infineon Technologies

DDB6U134N16RRBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Terminal Position: UPPER;

ISOLATED

70 A

1200 V

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

R-XUFM-X19

1

19

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

FS50R06KE3BOSA1 by Infineon Technologies

FS50R06KE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Form: UNSPECIFIED;

ISOLATED

70 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

265 ns

43 ns

BSM35GD120DLCE3224BOSA1 by Infineon Technologies

BSM35GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; No. of Elements: 6;

ISOLATED

70 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

370 ns

110 ns

BSM50GD60DLCBOSA1 by Infineon Technologies

BSM50GD60DLCBOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;

ISOLATED

70 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

151 ns

52 ns

FP50R12KS4CBOSA1 by Infineon Technologies

FP50R12KS4CBOSA1

Infineon Technologies

Infineon Technologies' FP50R12KS4CBOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 70A, and max. collector-emitter voltage of 1200V. It has a nominal turn on time of 110ns and turn off time of 460ns. Ideal for high-power applications requiring fast switching capabilities in industrial settings.

ISOLATED

70 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

460 ns

110 ns

BSM50GP60GBOSA1 by Infineon Technologies

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR; No. of Elements: 7;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

SIGC42T60NCX1SA5 by Infineon Technologies

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; JESD-30 Code: S-XUUC-N4; No. of Elements: 1;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

160 ns

55 ns

BSM10GP60BOSA1 by Infineon Technologies

BSM10GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 24; Nominal Turn Off Time (toff): 315 ns;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

BSM30GP60BOSA1 by Infineon Technologies

BSM30GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

BSM50GP60BOSA1 by Infineon Technologies

BSM50GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 105 ns;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

FP50R07N2E4BOSA1 by Infineon Technologies

FP50R07N2E4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 31; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

70 A

650 V

COMPLEX

6.45 V

20 V

R-XUFM-X31

7

31

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

43 ns

1.95 V

FS50R06W1E3BOMA1 by Infineon Technologies

FS50R06W1E3BOMA1

Infineon Technologies

Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X15

6

15

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

370 ns

250 ns

F450R12KS4B11BOSA1 by Infineon Technologies

F450R12KS4B11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn Off Time (toff): 390 ns;

ISOLATED

70 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F450R12KS4BOSA1 by Infineon Technologies

F450R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Nominal Turn On Time (ton): 190 ns; Nominal Turn Off Time (toff): 390 ns;

ISOLATED

70 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

FS50R07W1E3B11ABOMA1 by Infineon Technologies

FS50R07W1E3B11ABOMA1

Infineon Technologies

Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.

ISOLATED

70 A

650 V

COMPLEX

R-XUFM-X18

1

6

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

250 ns

45 ns

SIGC42T60NCX1SA4 by Infineon Technologies

SIGC42T60NCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

160 ns

55 ns

FS50R06W1E3B11BOMA1 by Infineon Technologies

FS50R06W1E3B11BOMA1

Infineon Technologies

Infineon FS50R06W1E3B11BOMA1 is a N-CHANNEL IGBT with 600V VCE, 70A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X18

6

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

370 ns

250 ns

FP50R07N2E4B11BOSA1 by Infineon Technologies

FP50R07N2E4B11BOSA1

Infineon Technologies

FP50R07N2E4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 31 terminals, and a max IC of 70 A. It has a VCE of 650 V and toff of 265 ns. Ideal for power control applications due to its fast ton of 43 ns and UL approval.

ISOLATED

70 A

650 V

COMPLEX

R-XUFM-X31

7

31

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

43 ns

IXSK35N120AU1 by IXYS Corporation

IXSK35N120AU1

IXYS Corporation

IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.

HIGH SPEED

COLLECTOR

70 A

1200 V

SINGLE WITH BUILT-IN DIODE

8 V

20 V

TO-264

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1100 ns

230 ns

4 V

STGW40NC60W by STMicroelectronics

STGW40NC60W

STMicroelectronics

STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

46 ns

STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGWA35HF60WDI by STMicroelectronics

STGWA35HF60WDI

STMicroelectronics

STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW40NC60WD by STMicroelectronics

STGW40NC60WD

STMicroelectronics

STGW40NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 280 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGW35NB60S by STMicroelectronics

STGW35NB60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;

ISOLATED

70 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

3600 ns

153 ns

STGW35NC60WD by STMicroelectronics

STGW35NC60WD

STMicroelectronics

STGW35NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 250 W, and operates at up to 150 °C. Its fast switching times (ton: 42.5 ns, toff: 197 ns) enhance performance in various electronic systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

197 ns

42.5 ns

STGW40NC60KD by STMicroelectronics

STGW40NC60KD

STMicroelectronics

STGW40NC60KD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 338 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

338 ns

64 ns

NGTB35N60FL2WG by Onsemi

NGTB35N60FL2WG

Onsemi

NGTB35N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 300W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters. With surface mount capability and a gate-emitter threshold voltage of 6.5V, it offers efficient power management in various industrial settings.

70 A

600 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

NGTB35N65FL2WG by Onsemi

NGTB35N65FL2WG

Onsemi

The Onsemi NGTB35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 300W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

70 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGW45HF60WD by STMicroelectronics

STGW45HF60WD

STMicroelectronics

STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.

LOW CONDUCTION LOSS

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

44 ns

STGW39NC60VD by STMicroelectronics

STGW39NC60VD

STMicroelectronics

STGW39NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 366ns.

ISOLATED

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

366 ns

46 ns

STGW35NB60SD by STMicroelectronics

STGW35NB60SD

STMicroelectronics

STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-247AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

153 ns

NGTG35N65FL2WG by Onsemi

NGTG35N65FL2WG

Onsemi

The Onsemi NGTG35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 231ns toff. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and RECTANGULAR shape for FLANGE MOUNT installation.

COLLECTOR

70 A

650 V

SINGLE

TO-247

R-PSFM-T3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

POWER CONTROL

SILICON

231 ns

108 ns

DDB6U134N16RRB11BPSA1 by Infineon Technologies

DDB6U134N16RRB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;

ISOLATED

70 A

1200 V

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

R-XUFM-X19

1

19

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

IRG4PC50FD-EPBF by Infineon Technologies

IRG4PC50FD-EPBF

Infineon Technologies

IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.

ULTRA FAST SOFT RECOVERY

COLLECTOR

70 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

660 ns

86 ns

FS100R12W2T7B11BOMA1 by Infineon Technologies

FS100R12W2T7B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 221 ns;

ISOLATED

70 A

1200 V

COMPLEX

6.45 V

20 V

R-XUFM-X33

6

33

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

655 ns

221 ns