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COMMERCIAL Flash Memory 249

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39SF010A-55-4C-NHE-T by Microchip Technology

SST39SF010A-55-4C-NHE-T

Microchip Technology

SST39SF010A-55-4C-NHE-T by Microchip Technology is a NOR type Flash Memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles endurance, 55ns access time, and supports asynchronous operation. Ideal for applications requiring high-speed data storage in commercial temperature environments.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.556 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

SST39SF040-70-4C-WHE-T by Microchip Technology

SST39SF040-70-4C-WHE-T

Microchip Technology

SST39SF040-70-4C-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 70°C max temp, 5V supply, and 70ns access time. Ideal for commercial applications requiring high endurance, featuring 100k Write/Erase cycles and a compact form factor of 12.4mm x 8mm.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39VF1601-70-4C-B3KE-T by Microchip Technology

SST39VF1601-70-4C-B3KE-T

Microchip Technology

SST39VF1601-70-4C-B3KE-T by Microchip Technology is a 1MX16 NOR flash memory with 512 sectors and 3V nominal voltage. It operates in asynchronous mode, has 100000 write/erase cycles endurance, and supports common flash interface. Ideal for applications requiring fast access time, such as embedded systems and consumer electronics.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

16777216 bit

FLASH

16

1

1

512

48

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F8G16ADBDAH4:D by Micron Technology

MT29F8G16ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08AJADAWP:D by Micron Technology

MT29F16G08AJADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

25 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

16K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ABACAWP:C by Micron Technology

MT29F16G08ABACAWP:C

Micron Technology

MT29F16G08ABACAWP:C by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 2GX8 organization, 4K sectors, and 512K sector size. It operates b/w 0-70°C, has a memory density of 17179869184 bit, and uses a parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

4K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ABCCBH1-10:C by Micron Technology

MT29F16G08ABCCBH1-10:C

Micron Technology

MT29F16G08ABCCBH1-10:C by Micron Technology is a 2GX8 SLC NAND flash memory with 4K sectors and 2147483648 words. It operates at 3/3.3V, has a package style of GRID ARRAY, and uses parallel interface. Ideal for commercial applications requiring fast access time and low standby current.

20 ns

YES

NO

R-PBGA-B100

17179869184 bit

FLASH

8

4K

100

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABCBBH1-12:B by Micron Technology

MT29F8G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G01AAADDHC:D by Micron Technology

MT29F4G01AAADDHC:D

Micron Technology

MT29F4G01AAADDHC:D by Micron Technology is a 512MX8 SLC NAND flash memory with 4294967296 bit density. It operates at 3/3.3V, has 100000 Write/Erase cycles endurance, and supports SPI serial bus type. Ideal for applications requiring high-speed data storage in commercial temperature environments.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

HARDWARE

MT29F32G08ABAAAWP:A by Micron Technology

MT29F32G08ABAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AFAAAWP:A by Micron Technology

MT29F64G08AFAAAWP:A

Micron Technology

MT29F64G08AFAAAWP:A by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bit, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F256G08AUAAAC5:A by Micron Technology

MT29F256G08AUAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Power Supplies (V): 3/3.3; Terminal Form: NO LEAD;

20 ns

YES

NO

274877906944 bit

FLASH

32K

52

70 Cel

0 Cel

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10:A by Micron Technology

MT29F32G08ABCABH1-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10:A by Micron Technology

MT29F64G08AECABH1-10:A

Micron Technology

MT29F64G08AECABH1-10:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors. It operates at temperatures from 0 to 70 °C and has a max access time of 20 ns. Suitable for commercial applications, it features a package style of GRID ARRAY and uses parallel interface with 100 terminals.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10:A by Micron Technology

MT29F256G08AUCABH3-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AJAAAWP:A by Micron Technology

MT29F128G08AJAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AKAAAC5:A by Micron Technology

MT29F128G08AKAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Maximum Operating Temperature: 70 Cel; No. of Sectors/Size: 16K;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5:A by Micron Technology

MT29F128G08AMAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Memory Density: 137438953472 bit; Technology: CMOS;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10:A by Micron Technology

MT29F128G08AKCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10:A by Micron Technology

MT29F128G08AMCABH2-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

SST39VF6401B-70-4C-B1KE-T by Microchip Technology

SST39VF6401B-70-4C-B1KE-T

Microchip Technology

SST39VF6401B-70-4C-B1KE-T by Microchip: 3V NOR Flash Memory, 4Mx16 organization, 2K sectors. Ideal for commercial applications requiring fast access time and high endurance with a max operating temperature of 70°C.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

10 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

YES

NOR TYPE

8 mm

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F64G08AKCCBH2-10Z:C by Micron Technology

MT29F64G08AKCCBH2-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

16K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ADADAH4:D by Micron Technology

MT29F8G16ADADAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

3/3.3

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F32G08ABAAAWP-Z:A by Micron Technology

MT29F32G08ABAAAWP-Z:A

Micron Technology

Micron Technology's MT29F32G08ABAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 4GX8 organization, 8K page size, and 1M sector size. It operates b/w 0-70°C, has a memory density of 34359738368 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F32G08ABCABH1-10Z:A by Micron Technology

MT29F32G08ABCABH1-10Z:A

Micron Technology

Micron Technology's MT29F32G08ABCABH1-10Z:A is a 4GX8 SLC NAND flash memory with 4294967296 words capacity. It operates at temperatures from 0 to 70°C, with a max access time of 20 ns. Ideal for commercial applications requiring high memory density and low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AFAAAWP-Z:A by Micron Technology

MT29F64G08AFAAAWP-Z:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABJ1-10Z:A by Micron Technology

MT29F64G08AECABJ1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 132; Technology: CMOS; Toggle Bit: NO; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

68719476736 bit

FLASH

8

8K

132

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-Z:A by Micron Technology

MT29F128G08AJAAAWP-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AKAAAC5-Z:A by Micron Technology

MT29F128G08AKAAAC5-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Maximum Supply Current: 50 mA; Surface Mount: YES;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10Z:A by Micron Technology

MT29F128G08AKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Page Size (words): 8K;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5-Z:A by Micron Technology

MT29F128G08AMAAAC5-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: LGA; Command User Interface: YES; Parallel or Serial: PARALLEL;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10Z:A by Micron Technology

MT29F128G08AMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABJ2-10Z:A by Micron Technology

MT29F128G08AMCABJ2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 132; Sector Size (Words): 1M; Page Size (words): 8K; Minimum Operating Temperature: 0 Cel;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

132

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10Z:A by Micron Technology

MT29F256G08AUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABJ3-10Z:A by Micron Technology

MT29F256G08AUCABJ3-10Z:A

Micron Technology

MT29F256G08AUCABJ3-10Z:A by Micron Technology is a 1.8/3.3V SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates in commercial temperature grade with parallel interface and consumes max 50mA supply current. Ideal for applications requiring fast access time and low standby current.

20 ns

YES

NO

274877906944 bit

FLASH

32K

132

70 Cel

0 Cel

PLASTIC/EPOXY

BGA132,11X17,40

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

NO

SLC NAND TYPE

MT29F2G08ABBFAH4:F by Micron Technology

MT29F2G08ABBFAH4:F

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Toggle Bit: NO;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MTFDCAE001SAF-1D1 by Micron Technology

MTFDCAE001SAF-1D1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Technology: CMOS; Minimum Supply Voltage (Vsup): 4.75 V;

R-XXMA-X

36.9 mm

8589934592 bit

FLASH MODULE

8

1

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

MTFDCAE002SAF-1B1 by Micron Technology

MTFDCAE002SAF-1B1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Memory Density: 17179869184 bit;

R-XXMA-X

36.9 mm

17179869184 bit

FLASH MODULE

8

1

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

MTFDCAE004SAF-1B1 by Micron Technology

MTFDCAE004SAF-1B1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Programming Voltage (V): 5; No. of Functions: 1;

R-XXMA-X

36.9 mm

34359738368 bit

FLASH MODULE

8

1

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

SST39LF401C-55-4C-B3KE by Microchip Technology

SST39LF401C-55-4C-B3KE

Microchip Technology

SST39LF401C-55-4C-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 100000 Write/Erase Cycles. Operating at 3.3V, it offers fast access time of 55ns and features a parallel interface for high-speed data transfer. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

55 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF402C-55-4C-B3KE by Microchip Technology

SST39LF402C-55-4C-B3KE

Microchip Technology

SST39LF402C-55-4C-B3KE by Microchip: 256Kx16 NOR Flash Memory with 70°C max temp, 55ns access time, and 100k Write/Erase cycles. Ideal for commercial applications requiring fast data access and high endurance.

55 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

MTFDDAC128MAM-1J1 by Micron Technology

MTFDDAC128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Programming Voltage (V): 5; No. of Functions: 1; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAC256MAM-1K1 by Micron Technology

MTFDDAC256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Terminal Form: NO LEAD; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK128MAM-1J1 by Micron Technology

MTFDDAK128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; No. of Functions: 1;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK256MAM-1K1 by Micron Technology

MTFDDAK256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; Width: 69.85 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK512MAM-1K1 by Micron Technology

MTFDDAK512MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; No. of Functions: 1; Technology: CMOS; Maximum Seated Height: 7 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm