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COMMERCIAL Flash Memory 249

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F64G08AKCBBH2-12:B by Micron Technology

MT29F64G08AKCBBH2-12:B

Micron Technology

MT29F64G08AKCBBH2-12:B by Micron Technology is a 3.3V SLC NAND flash memory with 8GX8 organization, operating at 0-70 °C. It features a thin profile grid array package, 100 terminals, and parallel interface. Ideal for commercial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12:B by Micron Technology

MT29F64G08AMCBBH2-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F2G08ABBEAHC:ETR by Micron Technology

MT29F2G08ABBEAHC:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MTFDDAK240MAV-1AE12ABYY by Micron Technology

MTFDDAK240MAV-1AE12ABYY

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: SMA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

R-XSMA-N22

100.45 mm

2061584302080 bit

FLASH MODULE

8

1

22

257698037760 words

240G

ASYNCHRONOUS

70 Cel

0 Cel

240GX8

3-STATE

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MT29F1G08ABCHC:C by Micron Technology

MT29F1G08ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHC:C by Micron Technology

MT29F1G16ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MTFDDAK120MAV-1AE12ABYY by Micron Technology

MTFDDAK120MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Length: 100.5 mm;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAK480MAV-1AE12ABYY by Micron Technology

MTFDDAK480MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAK960MAV-1AE12ABYY by Micron Technology

MTFDDAK960MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAT120MAV-1AE12ABYY by Micron Technology

MTFDDAT120MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: DIE; Package Shape: RECTANGULAR; Package Style (Meter): UNCASED CHIP;

R-XUUC-N52

50.8 mm

FLASH

1

52

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

3.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

29.85 mm

MTFDDAT240MAV-1AE12ABYY by Micron Technology

MTFDDAT240MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: DIE; Package Shape: RECTANGULAR; Width: 29.85 mm;

R-XUUC-N52

50.8 mm

FLASH

1

52

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

3.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

29.85 mm

MT28F008B3VG-9B by Micron Technology

MT28F008B3VG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B3VG-9T by Micron Technology

MT28F008B3VG-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

AT49LV002-90TC by Atmel

AT49LV002-90TC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

90 ns

BOTTOM

YES

YES

R-PDSO-G32

e0

18.4 mm

2097152 bit

FLASH

8

3

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.00005 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

TMS29F040-90C5FML by Texas Instruments

TMS29F040-90C5FML

Texas Instruments

TMS29F040-90C5FML by Texas Instruments is a 512Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 90ns. Ideal for applications requiring fast, reliable data storage in commercial temperature environments.

90 ns

100000 PROGRAM/ERASE CYCLES

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

YES

NOR TYPE

11.43 mm

MT28F800B3SG-9B by Micron Technology

MT28F800B3SG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9T by Micron Technology

MT28F800B3SG-9T

Micron Technology

MT28F800B3SG-9T by Micron Technology is a 512KX16 NOR flash memory with 8388608 bit density. It operates at 3.3V, has 100000 Write/Erase Cycles endurance, and offers fast access time of 90 ns. Ideal for applications requiring high-speed data storage in small outline packages.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3WG-9B by Micron Technology

MT28F800B3WG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9T by Micron Technology

MT28F800B3WG-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F004B5VG-8B by Micron Technology

MT28F004B5VG-8B

Micron Technology

MT28F004B5VG-8B by Micron Technology is a NOR flash memory with 512KX8 organization, operating at 5V. It features a small outline package, GULL WING terminals, and offers 524288 words of memory. Ideal for commercial applications requiring fast access times and low standby current.

80 ns

100000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8B by Micron Technology

MT28F008B5VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8T by Micron Technology

MT28F008B5VG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F800B5SG-8B by Micron Technology

MT28F800B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5WG-8B by Micron Technology

MT28F800B5WG-8B

Micron Technology

MT28F800B5WG-8B by Micron Technology is a NOR flash memory with 512KX16 organization, operating at 5V. It features 524288 words, 8388608 bit memory density, and 0.000005 Amp standby current. Ideal for commercial applications requiring fast access time and parallel interface.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8T by Micron Technology

MT28F800B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

AT29LV010A-15JC by Atmel

AT29LV010A-15JC

Atmel

Atmel's AT29LV010A-15JC is a 128Kx8 NOR flash memory chip with 3.3V supply, operating at temperatures from 0 to 70°C. It features asynchronous operation, 150ns access time, and supports data polling. Ideal for applications requiring fast read/write speeds in commercial-grade devices.

150 ns

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1K

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.56 mm

128

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29LV020-20JC by Atmel

AT29LV020-20JC

Atmel

AT29LV020-20JC by Atmel is a 256Kx8 NOR flash memory with a 3.3V supply voltage and 200ns max access time. It is commonly used in applications that require high-speed data storage and retrieval, such as embedded systems and consumer electronics.

200 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

256

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C010A-12PC by Atmel

AT29C010A-12PC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T32;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-15PC by Atmel

AT29C010A-15PC

Atmel

Atmel's AT29C010A-15PC is a 128Kx8 NOR flash memory with 3-STATE output. Operating at 5V, it offers fast access time of 150ns and supports asynchronous mode. Widely used in commercial applications, this CMOS technology-based memory has a max write cycle time of 10ms.

150 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PC by Atmel

AT29C040A-12PC

Atmel

Atmel's AT29C040A-12PC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features asynchronous mode, 3-STATE output, and 10ms write cycle time. Widely used in commercial applications for data storage due to its fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-12TC by Atmel

AT29C010A-12TC

Atmel

AT29C010A-12TC by Atmel is a NOR type flash memory with an organization of 128Kx8 and a memory density of 1,048,576 bits. It operates asynchronously at a nominal voltage of 5V and has a max access time of 120ns. This flash memory is commonly used in applications that require non-volatile storage for data or program code.

120 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

3

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C040A-12TC by Atmel

AT29C040A-12TC

Atmel

Atmel's AT29C040A-12TC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features 3-state output and asynchronous mode, suitable for commercial applications requiring fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

240

5

5

Not Qualified

1.2 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C010A-90JC by Atmel

AT29C010A-90JC

Atmel

AT29C010A-90JC by Atmel is a 128Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it has a max access time of 90ns and supports asynchronous mode. Ideal for applications requiring fast data polling and parallel interfacing in commercial temperature environments.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-70JC by Atmel

AT29C512-70JC

Atmel

AT29C512-70JC by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 128-word page size, 10000 write/erase cycles endurance, and 70ns access time. Ideal for applications requiring high-speed parallel data storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

3.556 mm

128

.0001 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C1024-70JC by Atmel

AT29C1024-70JC

Atmel

Atmel's AT29C1024-70JC is a 64KX16 NOR flash memory chip with 10000 Write/Erase Cycles endurance. Operating at 5V, it offers 70ns access time and supports asynchronous mode. Ideal for applications requiring fast data polling and 3-STATE output characteristics in commercial temperature grade environments.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

1048576 bit

FLASH

16

2

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

4.57 mm

.0002 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

16.5862 mm

10 ms

MT28F400B5SG-8B by Micron Technology

MT28F400B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8T by Micron Technology

MT28F400B5SG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Width: 12.6 mm;

80 ns

ALSO CONFG AS 256KX16; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5WG-8B by Micron Technology

MT28F400B5WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8T by Micron Technology

MT28F400B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

235

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

12 mm

MT29F2G16ABBEAH4:E by Micron Technology

MT29F2G16ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:ETR by Micron Technology

MT29F2G16ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

AT49LV001-90JC by Atmel

AT49LV001-90JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,2,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

AT29C256-12JC by Atmel

AT29C256-12JC

Atmel

AT29C256-12JC by Atmel is a 32Kx8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 64-word page size, 120ns access time, and supports asynchronous mode. Ideal for applications requiring fast data polling and low standby current consumption.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

12

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JC by Atmel

AT29C256-70JC

Atmel

AT29C256-70JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-70JC by Atmel

AT29C257-70JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

70 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-90JC by Atmel

AT29C257-90JC

Atmel

AT29C257-90JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers fast access time of 90ns and endurance of 10k cycles. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

90 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT49F002NT-90PC by Atmel

AT49F002NT-90PC

Atmel

Atmel's AT49F002NT-90PC is a 256Kx8 NOR flash memory with 262144 words. Operating at 5V, it offers fast access time of 90ns and low standby current of 0.0001Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

90 ns

HARDWARE DATA PROTECTION

TOP

YES

YES

R-PDIP-T32

e0

42.05 mm

2097152 bit

FLASH

8

1

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

5.59 mm

16K,8K,96K,128K

.0001 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

M29F010B45K1 by STMicroelectronics

M29F010B45K1

STMicroelectronics

M29F010B45K1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports up to 100,000 write/erase cycles and operates in commercial temperature ranges. Ideal for embedded applications, it comes in a compact chip carrier package with 32 terminals.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm