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COMMERCIAL Flash Memory 249

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39VF040-70-4C-NHE-T by Microchip Technology

SST39VF040-70-4C-NHE-T

Microchip Technology

SST39VF040-70-4C-NHE-T by Microchip Technology is a 512Kx8 NOR flash memory chip with 128 sectors of 4K words each. Operating at 3V, it offers fast access time of 70ns and endurance up to 100,000 write/erase cycles. Ideal for commercial applications requiring reliable data storage in a compact chip carrier package.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

3

Not Qualified

3.556 mm

4K

.000015 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

SST39VF3201-70-4C-EKE-T by Microchip Technology

SST39VF3201-70-4C-EKE-T

Microchip Technology

SST39VF3201-70-4C-EKE-T by Microchip: NOR flash memory, 2Mx16 organization, 1K sectors. Ideal for commercial applications requiring 3V supply voltage and 70°C max operating temp. Features include 100k write/erase cycles, 70ns access time, and asynchronous operation.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST25PF020B-80-4C-QAE by Microchip Technology

SST25PF020B-80-4C-QAE

Microchip Technology

SST25PF020B-80-4C-QAE by Microchip Technology is a NOR type Flash Memory with 2MX1 organization, SPI serial bus type, and 80 MHz clock frequency. It is used for applications requiring 100000 write/erase cycles, such as consumer electronics and industrial automation.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

2097152 bit

FLASH

1

1

1

8

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.5/3.3

Not Qualified

.8 mm

SPI

.00003 Amp

Flash Memories

30 mA

3.6 V

2.3 V

YES

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MT29F2G16ABAEAWP:E by Micron Technology

MT29F2G16ABAEAWP:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

2K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F2G08ABBEAH4:E by Micron Technology

MT29F2G08ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAHC:E by Micron Technology

MT29F2G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G08ABBDAHC:D by Micron Technology

MT29F4G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABADAH4:D by Micron Technology

MT29F4G16ABADAH4:D

Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAWP:D by Micron Technology

MT29F4G16ABADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 256MX16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABBDAH4:D by Micron Technology

MT29F4G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAHC:D by Micron Technology

MT29F4G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F8G08ADBDAH4:D by Micron Technology

MT29F8G08ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F128G08CEAAAC5:A by Micron Technology

MT29F128G08CEAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

R-PBGA-B52

18 mm

137438953472 bit

FLASH

8

1

52

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F128G08CECABH1-10Z:A by Micron Technology

MT29F128G08CECABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12:A by Micron Technology

MT29F128G08CECABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12Z:A by Micron Technology

MT29F128G08CECABH1-12Z:A

Micron Technology

Micron Technology's MT29F128G08CECABH1-12Z:A is a 16GX8 MLC NAND flash memory with 137.4Gb density and operates at 3.3V. It features synchronous operation, very thin profile grid array package, and commercial temperature grade suitability for various applications requiring high-density storage in compact devices.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWP:A by Micron Technology

MT29F128G08CFAAAWP:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWP:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating in asynchronous mode. It features a memory density of 137.4Gb and is suitable for commercial applications requiring high-speed parallel data processing at temperatures ranging from 0 to 70°C.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPZ:A by Micron Technology

MT29F128G08CFAAAWPZ:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPZ:A is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 3.3V, it offers 137438953472 bits density and supports parallel programming. Ideal for commercial applications requiring high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F128G08CFAABWP-12:A by Micron Technology

MT29F128G08CFAABWP-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAABWP-12Z:A by Micron Technology

MT29F128G08CFAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 16G;

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWP:A by Micron Technology

MT29F256G08CJAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 8;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWPZ:A by Micron Technology

MT29F256G08CJAAAWPZ:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 274877906944 bit;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CJAABWP-12:A by Micron Technology

MT29F256G08CJAABWP-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Width: 12 mm;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F256G08CJAABWP-12Z:A by Micron Technology

MT29F256G08CJAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-10Z:A by Micron Technology

MT29F256G08CKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12:A by Micron Technology

MT29F256G08CKCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12Z:A by Micron Technology

MT29F256G08CKCABH2-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMAAAC5:A by Micron Technology

MT29F256G08CMAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

R-PBGA-B52

18 mm

274877906944 bit

FLASH

8

1

52

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F256G08CMCABH2-10Z:A by Micron Technology

MT29F256G08CMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 32G;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-12:A by Micron Technology

MT29F256G08CMCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F512G08CUAAAC5:A by Micron Technology

MT29F512G08CUAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

R-PBGA-B52

18 mm

549755813888 bit

FLASH

8

1

52

68719476736 words

64G

ASYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F512G08CUCABH3-10:A by Micron Technology

MT29F512G08CUCABH3-10:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-10Z:A by Micron Technology

MT29F512G08CUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F512G08CUCABH3-12:A by Micron Technology

MT29F512G08CUCABH3-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH

8

1

100

68719476736 words

64G

SYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F64G08CBAAAWP:A by Micron Technology

MT29F64G08CBAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 68719476736 bit;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CBAAAWPZ:A by Micron Technology

MT29F64G08CBAAAWPZ:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F64G08CBAABWP-12Z:A by Micron Technology

MT29F64G08CBAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-10Z:A by Micron Technology

MT29F64G08CBCABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12:A by Micron Technology

MT29F64G08CBCABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12Z:A by Micron Technology

MT29F64G08CBCABH1-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08AUABAC5:B by Micron Technology

MT29F128G08AUABAC5:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Length: 18 mm;

R-PBGA-B52

18 mm

137438953472 bit

FLASH

8

1

52

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F128G08AUCBBH3-12:B by Micron Technology

MT29F128G08AUCBBH3-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F16G08ABABAWP:B by Micron Technology

MT29F16G08ABABAWP:B

Micron Technology

MT29F16G08ABABAWP:B by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, 4K page size, and 512K sector size. It operates in commercial temperature grade with parallel interface. Ideal for applications requiring fast access times and low standby current.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12:B by Micron Technology

MT29F16G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 50 mA;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12:B by Micron Technology

MT29F32G08AECBBH1-12:B

Micron Technology

Micron Technology's MT29F32G08AECBBH1-12:B is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 34359738368-bit memory density, and operates in commercial temperature grade. It features a parallel interface, 100 terminals in a grid array package style measuring 12mm x 18mm x 1mm. Ideal for applications requiring high-speed synchronous operation and reliable data storage.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F32G08AFABAWP:B by Micron Technology

MT29F32G08AFABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F64G08AJABAWP:B by Micron Technology

MT29F64G08AJABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F64G08AKABAC5:B by Micron Technology

MT29F64G08AKABAC5:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B52

18 mm

68719476736 bit

FLASH

8

1

52

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

SLC NAND TYPE

14 mm