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56 Flash Memory 68

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F640J3F75G by Micron Technology

JS28F640J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

75 ns

8

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

64

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

54 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F640P33TF70A by Micron Technology

JS28F640P33TF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .002 Amp;

70 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

Not Qualified

16K,64K

.002 Amp

Flash Memories

28 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS48F4400P0VB00A by Micron Technology

JS48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

95 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

536870912 bit

FLASH

16

8, 510

56

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F320J3F75E by Micron Technology

JS28F320J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH;

75 ns

8

YES

YES

NO

R-PDSO-G56

33554432 bit

FLASH

16

32

56

2097152 words

2M

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F128J3F75H by Micron Technology

JS28F128J3F75H

Micron Technology

Micron Technology's JS28F128J3F75H is a NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. It operates at temperatures from -40 to 85°C and has a max access time of 75ns. Ideal for industrial applications requiring high-density parallel flash memory solutions.

75 ns

8

YES

YES

NO

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F640P30BF75A by Micron Technology

JS28F640P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Sector Size (Words): 16K,64K;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F640P30BF75D by Micron Technology

JS28F640P30BF75D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 4,63;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F640P30TF75A by Micron Technology

JS28F640P30TF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

75 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F00AP30TFA by Micron Technology

JS28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 64M;

110 ns

TOP

YES

YES

NO

R-PDSO-G56

1073741824 bit

FLASH

16

4,1023

56

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.00024 Amp

Flash Memories

31 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

M29W128GSH70N6E by Micron Technology

M29W128GSH70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 128;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSL70N6E by Micron Technology

M29W128GSL70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0001 Amp;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

JS28F128P30BF75A by Micron Technology

JS28F128P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F064M29EWHA by Micron Technology

JS28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F128P30TF75A by Micron Technology

JS28F128P30TF75A

Micron Technology

Micron Technology's JS28F128P30TF75A is a NOR flash memory with 8MX16 organization, operating at 1.8V. It features synchronous operation, 8388608 words capacity, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

75 ns

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F064M29EWBA by Micron Technology

JS28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

MX29GL128FHT2I-70G by Macronix

MX29GL128FHT2I-70G

Macronix

Macronix's MX29GL128FHT2I-70G is a 3V NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. Operating at -40 to 85°C, it offers fast access time of 70ns and low standby current of 0.00003A. Ideal for industrial applications requiring reliable non-volatile memory with parallel interface.

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

3

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00003 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

JS28F128P33TF70A by Micron Technology

JS28F128P33TF70A

Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F256P33BFE by Micron Technology

JS28F256P33BFE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Current: 31 mA;

105 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

4,255

56

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

2.7

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

M29W256GH70N3E by Micron Technology

M29W256GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G56;

70 ns

8

BOTTOM/TOP

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

125 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

M29DW256G70NF6E by Micron Technology

M29DW256G70NF6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Organization: 16MX16;

70 ns

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

M29DW256G7ANF6E by Micron Technology

M29DW256G7ANF6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

70 ns

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512M29EWHA by Micron Technology

JS28F512M29EWHA

Micron Technology

Micron Technology's JS28F512M29EWHA is a NOR flash memory with 32MX16 organization, 512 sectors, and 33554432 words. Operating at -40 to 85°C, it has a standby current of 0.000225A and access time of 110ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

110 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F064M29EWLA by Micron Technology

JS28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

75 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F064M29EWTA by Micron Technology

JS28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

JS28F128M29EWHF by Micron Technology

JS28F128M29EWHF

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

75 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F128M29EWLA by Micron Technology

JS28F128M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

75 ns

UNIFORM BLOCK

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

JS28F128P33BF70A by Micron Technology

JS28F128P33BF70A

Micron Technology

Micron Technology's JS28F128P33BF70A is a NOR type Flash Memory with 8MX16 organization, operating at 3V. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

20 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

M29W512GH7AN6E by Micron Technology

M29W512GH7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

8

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.7

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F640P33BF70A by Micron Technology

JS28F640P33BF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 4M;

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

4,63

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F00AP33EFA by Micron Technology

JS28F00AP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F00AP33TFA by Micron Technology

JS28F00AP33TFA

Micron Technology

Micron Technology's JS28F00AP33TFA is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 3V, it has a max access time of 105ns and supports industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F512P33BFD by Micron Technology

JS28F512P33BFD

Micron Technology

Micron Technology's JS28F512P33BFD is a 32MX16 flash memory with 536MB density. Operating at 3V, it offers fast access time of 105ns in industrial temperatures. With parallel interface and bottom boot block, it suits applications requiring high-speed data storage.

105 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512P33EFA by Micron Technology

JS28F512P33EFA

Micron Technology

JS28F512P33EFA by Micron Technology is a NOR flash memory with 32MX16 organization, 536MB density, and 105ns access time. It operates at 3V, has a temperature range of -40 to 85°C, and is suitable for industrial applications requiring high-speed parallel memory access.

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

14 mm

JS28F512P33TFA by Micron Technology

JS28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: TOP;

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

M29W512GH70N3E by Micron Technology

M29W512GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

80 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

JS28F640J3F75A by Micron Technology

JS28F640J3F75A

Micron Technology

Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75B by Micron Technology

JS28F640J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75E by Micron Technology

JS28F640J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words: 4194304 words;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F00AM29EWHA by Micron Technology

JS28F00AM29EWHA

Micron Technology

Micron Technology's JS28F00AM29EWHA is a NOR type Flash Memory with 64MX16 organization, operating at 3V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast access times and high memory density.

110 ns

8

YES

YES

YES

R-PDSO-G56

e4

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

M58LW032D110N6 by STMicroelectronics

M58LW032D110N6

STMicroelectronics

M58LW032D110N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 110 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports dual terminal positioning. Ideal for industrial applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

33554432 bit

FLASH

16

1

32

56

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

NOT SPECIFIED

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

14 mm

MT28F128J3RG-12MET by Micron Technology

MT28F128J3RG-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

120 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F128J3RP-12ET by Micron Technology

MT28F128J3RP-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F128J3RP-12MET by Micron Technology

MT28F128J3RP-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

LH28F160S5HT-TW by Sharp Corporation

LH28F160S5HT-TW

Sharp Corporation

LH28F160S5HT-TW by Sharp Corp is a 1MX16 NOR Flash Memory with 90ns access time, operating at -40 to 85°C. It features a supply voltage of 4.5-5.5V, parallel interface, and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices like smartphones and IoT gadgets.

90 ns

8

R-PDSO-G56

e6

18.4 mm

16777216 bit

FLASH

16

3

1

56

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

250

5

Not Qualified

1.19 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Bismuth (Sn/Bi)

GULL WING

.5 mm

DUAL

10

NOR TYPE

14 mm

LH28F320SKTD-ZR by Sharp Corporation

LH28F320SKTD-ZR

Sharp Corporation

LH28F320SKTD-ZR by Sharp Corp is a 32Mb NOR Flash Memory with 2Mx16 organization, operating at 3V. It features a fast access time of 120ns and operates in parallel mode. Ideal for commercial applications requiring high-speed data storage in compact devices.

120 ns

8

R-PDSO-G56

18.4 mm

33554432 bit

FLASH

16

1

56

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.19 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

MT28EW256ABA1HPN-0SITTR by Micron Technology

MT28EW256ABA1HPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 9 mm; Nominal Supply Voltage / Vsup (V): 3;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT28EW256ABA1LPN-0SITTR by Micron Technology

MT28EW256ABA1LPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 7 mm; Maximum Standby Current: .000135 Amp;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

JS28F00AP30EFA by Micron Technology

JS28F00AP30EFA

Micron Technology

Micron Technology's JS28F00AP30EFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous mode, 1K sectors, and a page size of 16 words. Ideal for industrial applications requiring fast access times and high memory density.

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm